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Tsunenobu Kimoto, Department of Electronic Science andEngineering, Kyoto University, Japan. Professor Kimoto has been involved in SiC research for morethan 20 years and his research activity in this field coversgrowth, optical and electrical characterization, device processing,device design and fabrication. He has published more than 300papers in international journals and has presented more than 50invited talks at international conferences. He was a guesteditor of the 2008 SiC special issues of IEEE Transactions onElectron Devices. James A Cooper, School of Electrical and ComputerEngineering, Purdue University, Indiana, USA Professor Cooper was a member of technical staff at BellLaboratories for ten years where he was principal designer ofAT&T's first microprocessor and investigated nonlineartransport in silicon inversion layers. His research at Purduehas centered on semiconductor device physics and characterization,focusing primarily on III-V materials and silicon carbide. Hehas co-authored over 250 technical papers and conferencepresentations.