Advanced Ceramic Materials E-Book

• Herausgeber: John Wiley & Sons
• Kategorie: Fachliteratur
• Serie: Advance Materials Series
• Sprache: Englisch

Seitenzahl: 738

Veröffentlichungsjahr: 2016

Beschreibung

Ceramic materials are inorganic and non-metallic porcelains, tiles, enamels, cements, glasses and refractory bricks. Today, "ceramics" has gained a wider meaning as a new generation of materials influence on our lives; electronics, computers, communications, aerospace and other industries rely on a number of their uses. In general, advanced ceramic materials include electro-ceramics, optoelectronic-ceramics, superconductive ceramics and the more recent development of piezoelectric and dielectric ceramics. They can be considered for their features including mechanical properties, decorative textures, environmental uses, energy applications, as well as their usage in bio-ceramics, composites, functionally graded materials, intelligent ceramics and so on. Advanced Ceramic Materials brings together a group of subject matter experts who describe innovative methodologies and strategies adopted in the research and development of the advanced ceramic materials. The book is written for readers from diverse backgrounds across chemistry, physics, materials science and engineering, medical science, pharmacy, environmental technology, biotechnology, and biomedical engineering. It offers a comprehensive view of cutting-edge research on ceramic materials and technologies. Divided into 3 parts concerning design, composites and functionality, the topics discussed include: * Chemical strategies of epitaxial oxide ceramics nanomaterials * Biphasic, triphasic and multiphasic calcium orthophosphates * Microwave assisted processing of advanced ceramic composites * Continuous fiber reinforced ceramic matrix composites * Yytria and magnesia doped alumina ceramic * Oxidation induced crack healing * SWCNTs vs MWCNTs reinforcement agents * Organic and inorganic wastes in clay brick production * Functional tantalum oxides * Application of silver tin research on hydroxyapatite

Leseprobe

Contents

Cover

Title page

Copyright page

Preface

Part 1: Design, Processing, and Properties

Chapter 1: Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms

1.1 Introduction

1.2 Integration of Epitaxial Functional Oxides Nanomaterials on Silicon Entirely Performed by Chemical Solution Strategies

1.3 Integration of Functional Oxides by Combining Soft Chemistry and Physical Techniques

1.4 Conclusions

Acknowledgments

References

Chapter 2: Biphasic, Triphasic, and Multiphasic Calcium Orthophosphates

2.1 Introduction

2.2 General Definitions and Knowledge

2.3 Various Types of Biphasic, Triphasic, and Multiphasic CaPO

4

2.4 Stability

2.5 Preparation

2.6 Properties

2.7 Biomedical Applications

2.8 Conclusions

References

Chapter 3: An Energy Efficient Processing Route for Advance Ceramic Composites Using Microwaves

3.1 Introduction

3.2 Historical Developments in Materials Processing by Microwaves

3.3 Introduction to Microwave Heating Process

3.4 Heating Methods by Microwaves

3.5 Advantages/Limitations of Microwave Material Processing

3.6 Application of Microwave Heating in Composite Processing

3.7 Future Prospectives

3.8 Conclusion

References

Part 2: Ceramic Composites: Fundamental and Frontiers

Chapter 4: Continuous Fiber-reinforced Ceramic Matrix Composites

4.1 Introduction

4.2 Parts of a CMC

4.3 Modern Uses of CMCs

4.4 History

4.5 Ceramic Fibers

4.6 Interface/Interphase

4.7 Matrix Materials

4.8 Matrix Fabrication Techniques

4.9 Toughness of CMCs

4.10 Applications

Acknowledgments

References

Chapter 5: Yytria- and Magnesia-doped Alumina Ceramic Reinforced with Multi-walled Carbon Nanotubes

5.1 Introduction

5.2 Dispersions and Stability of MWCNTs

5.3 Influence of Yytria (Y

2

O

3

) Doping on MWCNT/Al

2

O

3

Nanocomposites

5.4 Magnesia (MgO)-Tuned MWCNT/Al

2

O

3

Nanocomposites

5.5 Conclusions

Acknowledgments

References

Chapter 6: Oxidation-induced Crack Healing in MAX Phase Containing Ceramic Composites

6.1 History of Crack Healing in Ceramics

6.2 High-temperature Crack Healing in MAX Phases

6.3 Lower-temperature Crack Healing in MAX Phase-based Ceramics

6.4 Conclusions

Acknowledgments

References

Chapter 7: SWCNTs versus MWCNTs as Reinforcement Agents in Zirconia-and Alumina-based Nanocomposites: Which One to Use

7.1 Introduction

7.2 Single-walled Carbon Nanotubes

7.3 Multi-walled Carbon Nanotubes

7.4 The Effects of CNTs Types on the Mechanical Properties of Al

2

O

3

- and ZrO

2

-based Ceramics

7.5 Why SWCNTs? or Why MWCNTs?

7.6 Conclusions

Acknowledgments

References

Part 3: Functional and Applied Ceramics

Chapter 8: Application of Organic and Inorganic Wastes in Clay Brick Production: A Chemometric Approach

8.1 Introduction

8.2 Materials and Methods

8.3 Results and Discussion

8.4 Conclusions

Acknowledgments

References

Chapter 9: Functional Tantalum-based Oxides: From the Structure to the Applications

9.1 Functional Materials: Current Needs

9.2 Importance of Tantalum and Tantalum-based Oxides

9.3 Properties of Alkali Tantalates

9.4 Processing of Alkali Tantalate Ceramics for Electronic Applications

9.5 Potential Applications of Alkali Tantalates

9.6 Conclusions

Acknowledgements

References

Chapter 10: Application of Silver Tin Research on Hydroxyapatite

10.1 Introduction

10.2 Materials and Methods

10.3 Results and Discussion

10.4 Conclusion

References

Index

End User License Agreement

Guide

Cover

Copyright

Contents

Begin Reading

List of Tables

Chapter 2

Table 2.1

Existing calcium orthophosphates and their major properties [3–5].

Table 2.2

Trademarks of the commercially produced biphasic, triphasic, and multiphasic calcium orthophosphates [3].

Chapter 6

Table 6.1

Crack-healing kinetic parameters of Ti

2

Al

0.

5

Sn

0.

5

C–Al

2

O

3

composites [65].

Chapter 7

Table 7.1

Some characteristics of SWCNTs (from Ref. [47]).

Table 7.2

Comparison of mechanical properties (from Ref. [48]).

Table 7.3

Processing details of different CNTs-reinforced Al

2

O

3

and ZrO

2

ceramics nano composites.

Table 7.4

Some general characteristics of MWCNTs (from Ref. 47).

Table 7.5

Properties of different CNTs-reinforced ceramics.

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Scrivener Publishing 100 Cummings Center, Suite 541J Beverly, MA 01915-6106

Advanced Materials Series The Advanced Materials Series provides recent advancements of the fascinating field of advanced materials science and technology, particularly in the area of structure, synthesis and processing, characterization, advanced-state properties, and applications. The volumes will cover theoretical and experimental approaches of molecular device materials, biomimetic materials, hybrid-type composite materials, functionalized polymers, supramolecular systems, information- and energy-transfer materials, biobased and biodegradable or environmental friendly materials. Each volume will be devoted to one broad subject and the multidisciplinary aspects will be drawn out in full.

Series Editor: Ashutosh Tiwari Biosensors and Bioelectronics Centre Linköping University SE-581 83 Linköping Sweden E-mail: [email protected]

Managing Editors: Sachin Mishra and Sophie Thompson

Publishers at Scrivener Martin Scrivener ([email protected]) Phillip Carmical ([email protected])

Advanced Ceramic Materials

Edited by

Ashutosh Tiwari, Rosario A. Gerhardt and Magdalena Szutkowska

Copyright © 2016 by Scrivener Publishing LLC. All rights reserved.

Co-published by John Wiley & Sons, Inc. Hoboken, New Jersey, and Scrivener Publishing LLC, Beverly, Massachusetts. Published simultaneously in Canada.

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Library of Congress Cataloging-in-Publication Data:

ISBN 978-1-119-24244-4

Preface

Ceramic materials are inorganic and nonmetallic porcelains, tiles, enamels, cements, glasses and refractory bricks. Today, the term “ceramics” has gained a wider meaning as a new generation of materials which influence our lives; electronics, computers, communications, aerospace and other industries rely on them for a number of uses. In general, advanced ceramic materials include electroceramics, optoelectronic ceramics, superconductive ceramics and the more recently developed piezoelectric and dielectric ceramics. Due to their features, including their mechanical properties and decorative textures, they can be considered for environmental uses and energy applications, as well as for use in bioceramics, composites, functionally graded materials, intelligent ceramics and so on. This book has a transdisciplinary readership that spans students, engineers, scholars, scientists, physicists, chemists, life scientists and beyond. The volume brings together innovative methodologies and strategies adopted in the research and development of advanced ceramic materials and offers a comprehensive view of cutting-edge research on ceramic materials and technologies.

A wide range of processing methods used to generate ceramic materials for a variety of functional, structural and biomedical applications are described in this book. The book starts with an excellent review of solution-based methods that can be used to deposit epitaxial films of oxide nanomaterials for microelectronics applications and is followed by a detailed description of tantalum oxides and related phases and their potential use in solar cells and other applications. In the next chapter there is a discussion of the basics of microwave processing which contains a brief summary of its history in various materials and a description of the recent work on hybrid microwave sintering of metal matrix composites containing absorbing ceramic materials.

The next chapters focus on structural applications, starting with a description of continuous fiber ceramic matrix composites, where typical matrix and filler materials are discussed along with the interfacial layers needed to induce crack deflection and improved fracture toughness. The following two chapters deal with the addition of carbon nanotubes (single-wall and multiwall) into bulk alumina and zirconia and how the characteristics of the nanotubes as well as the processing methods used can affect the resultant properties. Next the detection of crack healing in MAX phase ceramics and their enhanced properties as a result of the incorporation of these unique materials are discussed.

Additional chapters investigate the effect of the additives on manufacturability and biocompatibility. In the first chapter of this section, waste materials from a variety of industries are incorporated into ceramic brick for sustainable manufacturing. The authors propose the use of an artificial neural network optimization program for identifying the conditions that work best for each additive. The next chapter focuses on the importance of different additives to improve the bioactivity of calcium orthophosphates used in medical implants, followed by a chapter investigating the effect of silver additions to hydroxyapatite for improved antifungal and antibacterial responses using a variety of surface controlled schemes.

This book is written for readers from diverse backgrounds across the fields of chemistry, physics, materials science and engineering, medical science, pharmacy, environmental technology, biotechnology, and biomedical engineering.

Editors Ashutosh Tiwari, PhD, DSc Rosario Gerhardt, PhD Magdalena Szutkowska, PhD July, 2016

Part 1DESIGN, PROCESSING, AND PROPERTIES

Chapter 1Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms

A. Carretero-Genevrier1*, R. Bachelet1, G. Saint-Girons1, R. Moalla1, J. M. Vila-Fungueiriño2, B. Rivas-Murias2, F. Rivadulla2, J. Rodriguez-Carvajal3, A. Gomez4, J. Gazquez4, M. Gich4 and N. Mestres4

1Institut des Nanotechnologies de Lyon (INL) CNRS—Ecole Centrale de Lyon, Ecully, France

2Centro de Investigación en Química Biológica y Materiales Moleculares (CIQUS), Universidad de Santiago de Compostela, Santiago de Compostela, Spain

3Institut Laue-Langevin, Grenoble Cedex 9, France

4Institut de Ciència de Materials de Barcelona ICMAB, Consejo Superior de Investigaciones Científicas CSIC, Campus UAB Catalonia, Spain

*Corresponding author:[email protected]

Abstract

The technological impact of combining substrate technologies with the properties of functional advanced oxide ceramics is colossal given its relevant role in the development of novel and more efficient devices. However, the precise control of interfaces and crystallization mechanisms of dissimilar materials at the nanoscale needs to be further developed. As an example, the integration of hybrid structures of high-quality epitaxial oxide films and nanostructures on silicon remains extremely challenging because these materials present major chemical, structural and thermal differences. This book chapter describes the main promising strategies that are being used to accommodate advanced oxide nanostructured ceramics on different technological substrates via chemical solution deposition (CSD) approaches. We will focus on novel examples separated into two main sections: (i) epitaxial ceramic nanomaterials entirely performed by soft chemistry, such as nanostructured piezoelectric quartz thin films on silicon or 1D complex oxide nanostructures epitaxially grown on silicon, and (ii) ceramic materials prepared by combining soft chemistry and physical techniques, such as epitaxial perovskite oxide thin films on silicon using the combination of soft chemistry and molecular beam epitaxy. Consequently, this chapter will cover cutting-edge strategies based on the potential of combining epitaxial growth and CSD to develop oxide ceramics nanomaterials with novel structures and improved physical properties.

Keywords: Epitaxial growth, thin-film growth, silicon, perovskites, solution chemistry, molecular beam epitaxy, oxide nanostructures, magnetic oxide nanowires, quartz thin films, octahedral molecular sieves

1.1 Introduction

Single-crystalline thin films of functional oxides exhibit a rich variety of properties such as ferroelectricity, piezoelectricity, superconductivity, ferro- and antiferro-magnetism, and nonlinear optics that are highly appealing for new electronic, opto-electronic and energy applications [1, 2]. Over the past few years, tremendous progress has been achieved in the growth of functional oxides on oxide substrates (such as LaAlO3, SrTiO3, Al2O3, MgO, and scandates) [3, 4]. As a result, to date, it is possible to control the epitaxial growth at the unit cell level, which has led to new phenomena arising from the engineering of novel interfaces [5–8]. However, to fully exploit their properties, functional oxides should be effectively integrated on a semiconductor platform like silicon, germanium or III/V substrates, which are compatible with the electronics industry. The controlled epitaxial growth of functional oxide layers on semiconductor substrates is a challenging task as a result of the strong structural, chemical, and thermal dissimilarities existing between these materials. In spite of the difference in lattice parameters and thermal expansion coefficients, the major difficulty to engineer epitaxy is linked to the necessity of preventing the formation of an amorphous interfacial layer during the first stages of the growth (e.g. SiO2 or silicates on Si, depending of the atmosphere), which hinders any further epitaxy. Additionally, the cations of most oxide compounds can easily interdiffuse into the silicon substrate giving rise to the formation of spurious phases at the interface [9]. To overcome these major challenges, it is required to use a stable buffer layer, which can act simultaneously as a chemical barrier preventing ionic inter-diffusion and as a structural template favoring epitaxy.

In this context, McKee et al. [10] demonstrated the possibility to grow epitaxial SrTiO3 (STO) films on Si(001) by molecular beam epitaxy (MBE) with Sr passivation strategy. This work sets the basis to integrate STO and related perovskites on silicon for monolithic devices. Consequently, most of the research on crystalline functional oxides such as STO [11], lead zirconate titanate PbZr0.52Ti0.48O3(PZT) [12], BaTiO3 (BTO) [13–17], LaCoO3 (LCO) [18], and La0.7Sr0.3MnO3 (LSMO) [19] integrated with Si has been based on an STO buffer layer epitaxially grown on Si(001) by MBE.

For decades, the integration of functional oxides onto a silicon platform has been identified as an important route to improve and widen the performances of microelectronics and nanoelectronics devices. A clear example is the successful preparation of two-dimensional electron gas at interfaces between LaAlO3 and SrTiO3 (STO) on Si(001). In this case, the STO film acts simultaneously as a buffer layer and as an active part of the functional heterostrucuture [20]. Moreover, 2D electron gases at the interface have also been demonstrated using LaTiO3 [21] and GdTiO3 [22, 23] grown on STO-buffered Si. Functional non-volatile BTO-based ferroelectric tunnel junctions (FTJ) on Si(001) substrates with a tunneling electroresistance (TER) ratio over 10,000% have been recently demonstrated by pulsed laser deposition (PLD) [24] and MBE [25] growth methods. In both cases, this was accomplished by including a thin layer of STO as an epitaxial template on silicon. In addition, concomitant ferroelectric and antiferromagnetic behaviors were demonstrated on single-crystal BiFeO3 (BFO) films grown on STO on Si(100) using PLD [26] and MBE [27].

Integration of self-assembled vertical epitaxial nanocomposites thin films on Si substrates has been reported for multiferroic or magnetic memory and logic devices. The growth of La0.7Sr0.3MnO3–ZnO perovskite–wurtzite and CeO2–BTO fluorite–perovskite vertical nanocomposites on a Si substrate by PLD was described using a TiN/SrTiO3 bilayer buffer layer [28, 29]. The respective magnetoresistance and ferroelectric properties matched those of similar films grown on single-crystal STO. In addition, perovskite–spinel magneto-electric BFO–CFO vertical nanocomposites were successfully integrated on Si using two different buffered substrates: Sr(Ti0.65Fe0.35)O3/CeO2/YSZ/Si and 8 nm STO/Si [30].

The integration of functional oxides on germanium has recently received a great attention for high-speed and low-power device applications [31], as a result of the higher electron and hole mobility of germanium over silicon [32]. Indeed, a germanium-based ferroelectric field effect transistor was produced recently [33]. In this case, an ultrathin (20 Å) STO layer was first deposited on the Ge substrate. This layer imposes an in-plane compressive strain on BTO to overcome the tensile strain caused by the thermal expansion mismatch between both materials, therefore providing BTO films on Ge with out-of-plane polarization.

The development of freestanding oxide devices based on microelectromechanical systems (MEMS) technologies using standard silicon micromachining techniques was possible from SrTiO3/Si structures. Thus, the fabrication of integrated free-standing LSMO microbridges for low-power consumption pressure sensors [34] and uncooled bolometers [35] was recently demonstrated.

The direct growth of functional oxide film on silicon has proved to be also an effective way of integration without epitaxy. In this context, a field effect transistor preserving magnetoelectric functionality on a silicon-integrated device based on a La0.825Sr0.175MnO3/Pb0.2Zr0.8TiO3 (LSMO/PZT) bilayer directly grown by PLD on non-processed Si substrate has been demonstrated by Fina et al. [36]. The measured modulation of the magnetic and transport properties of LSMO upon PZT ferroelectric switching is large, despite the polycrystalline nature of the structure.

Yttrium-stabilized zirconia (YSZ) has also shown to be a very effective buffer layer to integrate functional oxide layers on Si(001) despite a lattice mismatch of about 5% and because it scavenges the native oxide on the substrate surface and reduces the native SiO2 oxide layer, with controlled oxygen partial pressure. These characteristics favor the formation of an epitaxial relation with the silicon substrate [37–39], thus making possible the integration of functional ferromagnetic spinel oxides [40–42] and ferroelectric perovskite oxides [43]. The use of an YSZ template substrate has also permitted the fabrication of all-oxide, free-standing, heteroepitaxial, and piezoelectric MEMS on silicon by using PbZr0.52Ti0.48O3 as the active functional material [44]. Recently, optimized growth conditions and subsequent functional oxides deposition have been shown on a silicon wafer scale (>4”) using PLD [45].

The opportunities of combining functional oxides with integrated photonic devices and circuits are equally enormous. In spite of the recent advances made on silicon photonics, many limitations still need to be solved [46]. The integration of electro-optical active oxides will allow extending the silicon photonics platform to engineer nonlinear materials, which can be effectively used for tuning, switching, and modulating light in extremely dense photonic circuits. Examples of that are: the fabrication of electro-optical switches based on oxides with metal-to-insulator transitions (e.g. VO2) [47], optical insulators based on magnetic oxides (e.g. Co-substituted CeO2–δ and Co/Fe-substituted SrTiO3–δ) [48], and high-speed modulators based on oxides with the strong Pockels coefficients (e.g. BaTiO3) [49, 50]. Moreover, the integration of PZT layers on GaAs substrates is highly interesting for optoelectronic applications considering, for instance the modulation of the optical properties of GaAs-based heterostructures through the strain induced by a piezoelectric layer [51]. Analogously, an epitaxial buffer layer of STO initially grown by MBE is needed for the successful epitaxial integration of the ferroelectric PZT on GaAs [52, 53]. BTO has also been successfully integrated on GaAs using MBE and showed good ferroelectric characteristics when measured by piezoresponse force microscopy (PFM) [54].

In the past decades, most of the works on crystalline oxides thin films growth on semiconductors have been based on a layer-by-layer approach to heteroepitaxy. The main techniques used to this purpose have been MBE or PLD after adjusting the growth conditions during the deposition to avoid semiconductor surface oxidation or cationic interdiffusion at the interface. However, for future applications in industry, chemical deposition methods such as metal–organic chemical vapor deposition (MOCVD), chemical solutions and sol–gel-based processes, and atomic layer deposition (ALD) show clear advantages over MBE or PLD. These advantages are mainly due to the scalability and low cost of chemical deposition-based methods. ALD entails the sequential delivery of precursors or reagents that either adsorb to saturation coverage or undergo selective ligand reactions, which are self-limiting for the film growth [55, 56]. This growth technique can provide atomic layer control and allows the deposition of ultrathin conformal films onto very high-aspect-ratio structures.

As previously mentioned, an STO buffer layer grown by MBE is a required step for the epitaxial integration of many oxide materials. In this context, the growth of crystalline oxides on semiconductors by combining physical and chemical methods is also a matter of current research [55]. As an example, a combined MBE (to grow first a four-unit cell thick STO buffer layer) and ALD growth method to deposit crystalline oxide thins films on Si(001) including TiO2, BaTiO3, SrTiO3, and LaAlO3 was developed [57–60]. In addition, the deposition of ferroelectric Pb(Zr)TiO3 using chemical solution spin coating on STO-buffered Si and GaAs grown by MBE was also demonstrated [61, 62].

The use of Ge or GaAs substrates makes possible to grow epitaxial perovskite oxides directly via ALD [63], compared to silicon substrates. In this case, a post-deposition annealing at high temperatures is required for crystallization. Recent improvements in the crystalline quality of oxides grown on Ge using ALD highlight the potentiality of this growth method as a scalable integration route of functional oxides for microelectronics technology. Indeed, epitaxial STO and Al-doped STO films up to 15 nm thick with a high degree of crystallinity were grown on the Ge(001) substrates via ALD for high-mobility Ge-based transistors [64]. ALD growth of epitaxial SrHfO3 on Ge as a high-k dielectric material has also been demonstrated [65]. Likewise, high-quality epitaxial LaLuO3 and La2–xYxO3 thin films were achieved on GaAs (111) by ALD, and GaAs MOS capacitors made from this epitaxial structures showed very good interface quality with small frequency dispersion and low interface trap densities [66, 67]. Nevertheless, the integration of functional oxides on semiconductors entirely performed by chemical methods is still in its early stages.

In this chapter, we present recent promising strategies used to accommodate advanced oxide nanostructures on silicon substrates via chemical solution deposition (CSD) routes. Two different approaches are proposed, namely the growth of nanostructured oxides entirely by chemical solutions and the combination of soft chemistry and MBE. These two approaches along with relevant examples that will be further discussed in this chapter are displayed in Figure 1.1.

Figure 1.1 General schematic diagram representing all the processes, oxide nanomaterials integrated on silicon, and applications discussed in this book chapter.

1.2 Integration of Epitaxial Functional Oxides Nanomaterials on Silicon Entirely Performed by Chemical Solution Strategies

Integrating functional oxides nanomaterials as active materials in devices importantly depends on the capability to incorporate crystalline metal