Beyond-CMOS E-Book
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- Herausgeber: John Wiley & Sons
- Kategorie: Wissenschaft und neue Technologien
- Serie: ISTE Consignment
- Sprache: Englisch
Recent advances in physics, material sciences and technology have allowed the rise of new paradigms with bright prospects for digital electronics, going beyond the reach of Moore's law, which details the scaling limit of electronic devices in terms of size and power. This book presents original and innovative topics in the field of beyond CMOS electronics, ranging from steep slope devices and molecular electronics to spintronics, valleytronics, superconductivity and optical chips. Written by globally recognized leading research experts, each chapter of this book will provide an introductory overview of their topic and illustrate the state of the art and future challenges. Aimed not only at students and those new to this field, but also at well-experienced researchers, Beyond-CMOS provides extremely clear and exciting perspectives about the technology of tomorrow, and is thus an effective tool for understanding and developing new ideas, materials and architectures.
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Veröffentlichungsjahr: 2023
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Contents
Cover
Title Page
Copyright Page
Preface
Chapter 1. Tunnel Field-Effect Transistors Based on III–V Semiconductors
1.1. Introduction
1.2. Experiments
1.3. Simulation of III–V-based TFETs
1.4. SS degradation mechanisms
1.5. Strategies to improve the on-state current
1.6. Conclusion
1.7. References
Chapter 2. Field-Effect Transistors Based on 2D Materials: A Modeling Perspective
2.1. Introduction
2.2. Modeling approach
2.3. 2D device performance analysis
2.4. Challenges and opportunities
2.5. Conclusion and outlook
2.6. Acknowledgments
2.7. References
Chapter 3. Negative Capacitance Field-Effect Transistors
3.1. Introduction
3.2. The rise of NC-FETs
3.3. Understanding NC-FETs from scratch
3.4. Fundamental challenges of NC-FET
3.5. Design and optimization of NC-FET
3.6. Appendix: A rule for polarization dynamics-based interpretation of the subthermionic SS
3.7. References
Chapter 4. Z2 Field-Effect Transistors
4.1. Introduction
4.2. Z2FET steady-state operation
4.3. Z2FET steady-state analytical and compact model
4.6. Z2FET structure optimization
4.7. Z2FET advanced applications
4.8. Conclusion
4.9. References
Chapter 5. Two-Dimensional Spintronics
5.1. Introduction
5.2. Spintronics in 2D Rashba gases at oxide surfaces–interfaces
5.3. Spintronics in lateral spin devices in 2D materials
5.4. 2D materials in magnetic tunnel junctions
5.5. Topological insulators in spintronics
5.6. References
Chapter 6. Valleytronics in 2D Materials
6.1. Introduction
6.2. Exciton and valley physics
6.3. Valley lifetime, transport and operations
6.4. Valleytronic devices and materials
6.5. Valleytronic computing
6.6. References
Chapter 7. Molecular Electronics: Electron, Spin and Thermal Transport through Molecules
7.1. Introduction
7.2. How to make a molecular junction
7.3. Electron transport in molecular devices: back to basics
7.4. Electron transport: DC and low frequency
7.5. Electron transport at high frequencies
7.6. Spin-dependent electron transport in molecular junctions
7.7. Molecular electronic plasmonics
7.8. Quantum interference and thermal transport
7.9. Noise in molecular junctions
7.10. Conclusion and further reading
7.11. References
Chapter 8. Superconducting Quantum Electronics
8.1. Introduction
8.2. Passive superconducting electronics
8.3. Superconducting detectors
8.4. Superconducting digital electronics
8.5. Superconducting quantum computing
8.6. Cryogenic cooling
8.7. References
Chapter 9. All-Optical Chips
9.1. Introduction
9.2. Nanophotonic circuits
9.3. Phase change photonics
9.4. Photonic tensor core
9.5. Optical artificial neural network
9.6. Challenges and outlook
9.7. References
List of Authors
Index
Guide
Cover
Table of Contents
Title Page
Copyright
Begin Reading
Index
End User License Agreement
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SCIENCES
Electronics Engineering, Field Directors – Francis Balestra
Components and Manufacturing Techniques, Subject Head – Francis Balestra
Beyond-CMOS
State of the Art and Trends
Coordinated by
Alessandro Cresti
First published 2023 in Great Britain and the United States by ISTE Ltd and John Wiley & Sons, Inc.
Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address:
ISTE Ltd27-37 St George’s RoadLondon SW19 4EUUKwww.iste.co.uk
John Wiley & Sons, Inc.111 River StreetHoboken, NJ 07030USAwww.wiley.com
© ISTE Ltd 2023
The rights of Alessandro Cresti to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988.
Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s), contributor(s) or editor(s) and do not necessarily reflect the views of ISTE Group.
Library of Congress Control Number: 2022947446
British Library Cataloguing-in-Publication Data
A CIP record for this book is available from the British Library
ISBN 978-1-78945-127-6
ERC code:
PE7 Systems and Communication Engineering
PE7_5 (Micro- and nano-) electronic, optoelectronic and photonic components
PE3 Condensed Matter Physics
PE3_4 Electronic properties of materials, surfaces, interfaces, nanostructures, etc.
PE3_5 Physical properties of semiconductors and insulators
Preface
Alessandro CRESTI
CNRS, Grenoble INP, IMEP-LAHC, Université Grenoble Alpes, Université Savoie Mont Blanc, Grenoble, France
Going Beyond CMOS means going beyond Moore’s law (Moore 1965), which is basically an economic law from previous years (Englebart 1960) and described in more detail by Dennard et al. (1974) in terms of scaling of size and power at each new generation of transistors. Industry has followed this paradigm for many decades, beyond physical limits such as heating and short-channel effects. In this context, this research has enabled the development of this line using the so-called More Moore approach, which was recently described in the International Technology Roadmap for Semiconductors (ITRS, see: http://www.itrs2.net), which lasted until 2016.
These limits, on the contrary, have allowed the development of alternative research guides known as More-than-Moore (Arden et al. 2010) and Beyond CMOS (Nikonov and Young 2013). The first is a shift of the paradigm to different devices, which goes beyond transistors, and includes, for example, the development of sensors and energy harvesters. Beyond CMOS, on the contrary, is still mainly focused on logic devices, but includes different types of transistors complementary to metal–oxide–semiconductors. It consists of new technologies (such as tunnel FETs, spintronics, memristors or optical devices) and materials (such as III–V or 2D materials) that can be used as an alternative to silicon. Such an interesting development has also generated new scientific and economic advancements. Since 2016, the International Roadmap for Devices and Systems (IRDS, see: https://irds.ieee.org) has focused on these new technologies. Moreover, many important books (Balestra 2014a, 2014b; Brozek 2014; Chen et al. 2015; King Liu and Kuhn 2015; Topaloglu and Wong 2019; Dragoman and Dragoman 2021) have been published on the subject, whose contents are of primary interest.
This book focuses on some specific arguments detailed by leading and pioneering researchers in this field. All of the chapters contain a short introduction accessible to not-too-specialized readers and a discussion about the recent progresses and trends.
The first four chapters are devoted to steep-slope devices and low-power applications, which are one of the most important domains of Beyond CMOS electronics. The other chapters present more unconventional emerging technologies.
More specifically, Chapter 1, written by Marco Pala (CN2, Paris, France), presents the possible use of III–V semiconductors in tunnel field-effect transistors for steep-slope applications, in particular regarding their limits and advantages by numerical simulations of these devices.
Chapter 2, written by Mathieu Luisier (ETH, Zurich, Switzerland) and co-workers, illustrates the possible use of 2D materials for field-effect transistors, not restricted to transition metal dichalcogenides. 2D materials have the advantage of being extremely thin (few atomic layers), thus allowing a good electrostatic control and flexible applications.
In Chapter 3, Kaustav Banerjee (UC Santa Barbara, USA) illustrate the working mechanism and the implementation of steep-slope devices based on the negative capacitance properties of the gate obtained using ferroelectric materials. The author has a particularly critical view on the subject, which will be helpful to present the practical applications of this technology to the reader.
In Chapter 4, Joris Lacord (CEA-Leti, Grenoble, France) presents the exotic zero subthreshold swing and zero impact ionization field-effect transistor (Z2-FET) based on the silicon-on-insulator technology. This kind of steep-slope device is particularly promising, among other things, for applications in memories.
In Chapter 5, the field of 2D spintronics is deeply analyzed by Matthieu Jamet (Spintec, Grenoble, France), Diogo C. Vaz (CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain), Juan F. Sierra, Josef Světlík and Sergio O. Valenzuela (ICN2, CSIC and BIST, Barcelona, Spain), Bruno Dlubak and Pierre Seneor (Thales, Palaiseau, France), Frédéric Bonell (Spintec, Grenoble, France), Thomas Guillet (ICN2, CSIC and BIST, Barcelona, Spain) and their collaborators, especially from the experimental point of view. In this chapter, the term “2D” refers to both 2D materials, 2D electron gases and 3D topological insulators, with applications ranging from memories to spin transport logic.
A more exotic subject is presented in Chapter 6, written by Steven A. Vitale (MIT, Lexington, Massachusetts, U.S.A.), which illustrates the possible use of the valley degree of freedom and valley excitons in electronics. This innovative technology, based on the fact that an electron can occupy different valleys in the band structure, is still premature, but has important perspectives for logic operations and beyond, up to quantum computing.
Electronics can also be implemented through molecular systems. Chapter 7, written by Dominique Vuillaume (IEMN, Lille, France), is devoted to this emerging technology, which is very promising for the ultimate miniaturization of electronics. The strength of such a technology is incredibly large and varies from the implementation of standard logic devices to plasmonics and thermal transport.
Another innovative field is superconducting quantum electronics, presented in Chapter 8, written by Pascal Febvre (IMEP-LaHC, Le Bourget du Lac, France) and Sasan Razmkhah (TOBB university of Economy and Technology, Ankara, Turkey). Several very promising applications of superconductivity in the field of beyond CMOS electronics, including the realization of logic devices, neuromorphic computing and superconducting qubits, are presented.
Finally, a completely alternative technology, which consists of using light instead of electrons for the logic operations, is described in Chapter 9, written by Wolfram Pernice (Universität Münster, Germany) and co-workers. Being able to integrate these operations in a single chip is a major advance towards applications, including massively parallel computing and efficient neural networks.
The aim of this book is to provide the reader with a fresh overview of the major research advances in this field, especially in Beyond CMOS logic devices, and a detailed physical insight into new trends that are inspirational for future devices.
September 2022
References
Arden, W., Michel Brillouët, M., Patrick Cogez, P., Mart Graef, M., Bert Huizing, B., Mahnkopf, R. (2010). “More-than-Moore”. White Paper [Online]. Available at:
http://www.itrs2.net/uploads/4/9/7/7/49775221/irc-itrs-mtm-v2_3.pdf
.
Balestra, F. (2014a).
Beyond-CMOS Nanodevices 1
. ISTE, London, and John Wiley & Sons, New York.
Balestra, F. (2014b).
Beyond-CMOS Nanodevices 2
. ISTE, London, and John Wiley & Sons, New York.
Brozek, T. (2014).
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions.
CRC Press, Boca Raton.
Chen, A., Hutchby, J., Zhirnov, V., Bourianoff, G. (2015).
Emerging Nanoelectronic Devices.
John Wiley & Sons, Chichester.
Dennard, R.H., Gaensslen, F.H., Yu, H.N., Rideout, V.L., Bassous, E., LeBlanc, A.R. (1974). Design of ion-implanted MOSFET’s with very small physical dimensions.
IEEE Journal of Solid-State Circuits
, 9(5), 256–268.
Dragoman, M. and Dragoman, D. (2021).
Beyond CMOS, Atomic-Scale Electronics.
Springer International Publishing, Cham.
Englebart, D. (1960). Microelectronics and the art of similitude.
IEEE International Solid-State Circuits Conference. Digest of Technical Papers
, 76–77.
King Liu, T.J. and Kuhn, K. (2015).
CMOS and Beyond.
Cambridge Univesity Press, Cambridge.
Moore, G.E. (1965). Cramming more components onto integrated circuits.
Electronics
, 38(8), 114–117.
Nikonov, D.E. and Young, I.A. (2013). Overview of beyond-CMOS devices and a uniform methodology for their benchmarking.
Proceedings of the IEEE
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Topaloglu, R.O. and Wong, H.-S.P. (2019).
Beyond-CMOS Technologies for Next Generation Computer Design.
Springer International Publishing, Cham.
