FeFET Devices, Trends, Technology and Applications E-Book
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- Herausgeber: John Wiley & Sons
- Kategorie: Wissenschaft und neue Technologien
- Sprache: Englisch
FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development.
This book serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.
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Seitenzahl: 570
Veröffentlichungsjahr: 2025
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Table of Contents
Cover
Table of Contents
Series Page
Title Page
Copyright Page
Preface
Acknowledgements
1 Scaling and Challenge of Si-Based CMOS: Past, Present, and Future
1.1 Introduction to Si-Based CMOS Technology
1.2 Basic Concept of Transistor Scaling
1.3 Past Challenges in Scaling Si-Based CMOS
1.4 Present Challenges and Limitations of Si-Based CMOS
1.5 Representative Methods for Scaling MOSFET
1.6 Future Prospects and Innovations in Si-Based CMOS Technology
1.7 Navigating the Evolution of Si-Based CMOS Technology
1.8 The Future of Transistors: 2D FET
1.9 Conclusion
Acknowledgment
References
2 Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications
2.1 Introduction
2.2 Fabrication of Gate Dielectric Layer and FeFET
2.3 Working of FeFET
2.4 Applications of FeFET Device
2.5 Summary
Acknowledgments
References
3 Ferroelectric Applications in Novel Devices
3.1 Introduction
3.2 General Concepts of Ferroelectrics
3.3 Ferroelectric Materials Processing for Device Applications
3.4 Advanced Application of Ferroelectric Materials
3.5 Summary and Outlook
References
4 Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis
4.1 Introduction
4.2 Mechanism of the Device and Method of Simulation
4.3 Results and Discussions
4.4 Conclusion
References
5 Ferroelectric Material-Based Field Effect Transistor and Its Applications
5.1 Introduction
5.2 Ferroelectric Material Properties and Advantages
5.3 Ferroelectricity in Nanoelectronics
5.4 Structures of Ferroelectric FET
5.5 Applications
5.6 Conclusion
5.7 Future Prospects for Nanoferroelectric Devices
Acknowledgments
References
6 Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology
6.1 Introduction
6.2 Implementation of Ferroelectric Material in Tunnel FET
6.3 Results and Analysis
6.4 Conclusion
References
7 Identification of Negative Capacitance in Ferroelectric in FET Devices
7.1 Introduction
7.2 Negative Capacitance
7.3 NC in Ferroelectrics
7.4 Ferroelectric Materials in Practice for NC
7.5 Evidence of NC in Ferroelectrics
7.6 Perspectives
7.7 Conclusion
References
8 Tunnel Field Effect Transistors and Their Application in Biosensors
8.1 Introduction
8.2 What is Biosensor: Types and its Principle
8.3 Components of Biosensors
8.4 Application of FET in Biosensors
8.5 How TFET Works as a Biosensor and its Structure
8.6 Recent Structures of TFET-Based Bio-Sensors
8.7 Conclusion
References
9 Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications
9.1 Introduction
9.2 Physical Characteristics of TCOs
9.3 Types of Transparent Conductors
9.4 Deposition Techniques
9.5 Sol–Gel Deposition
9.6 Applications of TCOs
9.7 Conclusion
References
10 Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring
10.1 Introduction
10.2 Biosensors
10.3 Characteristics of Biosensors
10.4 Interaction Mechanism of Ferroelectric with Physical Stimuli
10.5 Working Principle of Biosensors
10.6 Biosensing Mechanism of Ferroelectrics
10.7 Ferroelectrics for Biosensing
10.8 Ferroelectrics in Health Monitoring
10.9 Ferroelectrics for Environmental Monitoring
10.10 Ferroelectrics for Agricultural Monitoring
10.11 FeFET Biosensors for Monitoring
10.12 Perspective
10.13 Conclusions
References
11 Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap
11.1 Introduction to Ferroelectric Application
11.2 Ferroelectric Materials and Properties
11.3 Basic Scaling and ITRS Roadmap
11.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/Drain Engineering, Local High Doping for Better Subthreshold Swing
11.5 Nanoscale Devices with Ferroelectric Applications
11.6 Advantages and Potential Applications of Ferroelectric Materials
11.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap
11.8 Possible Challenge in Future Ferroelectric Applications
11.9 Conclusion
References
12 Recent Electron Mobility Models for FeFET
12.1 Introduction to Electron Mobility and FeFET
12.2 Classical Electron Mobility Models
12.3 Quantum Mechanical Models for Electron Mobility
12.4 Density Functional Theory (DFT) Approaches for Electron Mobility
12.5 Empirical Electron Mobility Models and Parameter Extraction Techniques
12.6 Challenges and Limitations in Modeling FeFET Electron Mobility
12.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling
12.8 Conclusion
References
About the Editors
Index
Also of Interest
Books by the same editors
Check out these other related titles from Scrivener Publishing
End User License Agreement
List of Tables
Chapter 1
Table 1.1 Explanation of three scaling methods.
Table 1.2 Comparison between three scaling methods.
Table 1.3 Possible methods to realize further scaling in the future.
Chapter 2
Table 2.1 Advantages and challenges of emerging nonvolatile memories.
Chapter 4
Table 4.1 The following factors and their implications are investigated for si...
Table 4.2 Analyzing the retrieved properties of the abovementioned ferroelectr...
Chapter 5
Table 5.1 Most known 2D ferroelectric materials.
Table 5.2 Comparison of some ferroelectric materials.
Table 5.3 Material parameters for thin film SBT and oriented PZT.
Chapter 6
Table 6.1 Device design parameters for DG tunnel FET.
Table 6.2 Comparison between DGTFET homojunction heterojunction and FeDGTFET.
Chapter 11
Table 11.1 Electrical and thermal properties of novel materials.
Table 11.2 Parameter roadmap suggested by IRDS.
Table 11.3 Possible future challenges in ferroelectric application.
Chapter 12
Table 12.1 Intrinsic electron mobility and bandgap of various novel materials.
Table 12.2 Modern electron mobility models with various quantum mechanics.
Table 12.3 The domain of electron mobility research with DFT.
Table 12.4 The possible challenges in modeling FeFET electron mobility.
Table 12.5 Future direction and possibilities in electron mobility modeling wi...
List of Illustrations
Chapter 1
Figure 1.1 Illustration shows the example-circuit for explaining the importanc...
Figure 1.2 Schematic illustration describes the effect of scaling on decrease ...
Figure 1.3 Representative methods for MOSFET scaling.
Figure 1.4 Example of 2D materials: Graphene (semi-metal, hexagonal boron nitr...
Chapter 2
Figure 2.1 Diagram illustrating the basic top-source bottom-dielectric configu...
Figure 2.2 Schematic diagram of spin-coating process.
Figure 2.3 Schematic presentation of (a) Polarization–Electric Field (P–E) hys...
Figure 2.4 Schematic illustration of memory device classification.
Figure 2.5 (a) SEM image of the morphology of periodic OS lamellae. The 2D GIS...
Figure 2.6 AFM phase-contrast image of (a) normally cooled and (b) fast-quench...
Figure 2.7 (a) Illustration of the fabricated FeFET device and molecular struc...
Figure 2.8 (a) Illustrative image of transparent NVM FeFET device. (b)
I
D
–
V
G
t...
Figure 2.9 (a) Three-dimensional schematic and (b) optical images of the FET-b...
Figure 2.10 (a) Schematic representation of photosensing of FeFET device on po...
Figure 2.11 (a) Graphical image of fibriform organic transistor memory FOM (le...
Figure 2.12 (a)
I
DS
–
V
G
hysteretic transfer curve of ATFES resulting from the p...
Chapter 3
Figure 3.1 Schematic of the (a) hysteresis loop, (b) electric dipole. The dipo...
Figure 3.2 (a) Vortex and (b) skyrmion.
Figure 3.3 A schematic diagram of (a) direct and (b) indirect piezoelectric ef...
Figure 3.4 Schematic of piezoelectric device for energy harvesting.
Chapter 4
Figure 4.1 HBOX-Fe TFET architecture.
Figure 4.2 Polarization of the proposed HBOX Fe-TFET.
Figure 4.3 S-curve.
Figure 4.4 Id-Vgs with and without ferroelectric layer.
Figure 4.5 Id-Vgs characteristics.
Figure 4.6 Output characteristics.
Figure 4.7 Parameters w.r.to ferro thickness (a) I
ON
/I
OFF
and SS (b) I
ON
and I
Figure 4.8 Various capacitances.
Figure 4.9 Transconductance.
Figure 4.10 Output transconductance.
Figure 4.11 Cut-off frequency.
Figure 4.12 Transit time.
Figure 4.13 TFP.
Figure 4.14 GBP.
Chapter 5
Figure 5.1 Hysteresis of polarization and electric field.
Figure 5.2 The typical response of a ferroelectric material while applying an ...
Figure 5.3 Positions of interior atom in BTO (a) P
up
(b) P
down
polarization.
Figure 5.4 (a) Ferroelectric domain with zero polarization (b) with polarizati...
Figure 5.5 Different polarization states.
Figure 5.6 Structures of FeFETs.
Figure 5.7 (i) Structure of MFSFET.
Figure 5.7 (ii) Structure of MFISFET.
Figure 5.7 (iii) Structure of MFMIS.
Figure 5.7 (iv) Structure of dual gate FeFET.
Figure 5.7 (v) Structure of fin FeFET.
Figure 5.7 (vi) Gate all-around structure.
Figure 5.8 (i) Saturated polarization hysteresis loops for SBT and PZT. (ii) T...
Figure 5.9 PC-FE-ISFETs from a structural perspective.
Figure 5.10 Dielectric modulated dual gate ferroelectric junction-less transis...
Chapter 6
Figure 6.1 Ferroelectric market.
Figure 6.2 Schematic diagram of ferroelectric-based DGTFET.
Figure 6.3 Impact of electric field due to application ferroelectric material.
Figure 6.4 (a) Energy band diagram of Fe-DGTFET, (b): Energy band diagram of F...
Figure 6.5 Comparison of ID-VG characteristic of Fe Tunnel with conventional T...
Figure 6.6 Comparison of first derivative of ID-VGS of conventional double gat...
Figure 6.7 SS versus work function and doping source.
Figure 6.8 Gain versus cut-frequency (fT) and gate voltage (VGS).
Figure 6.9 Variation of transconductance and 1st derivative with drain current...
Chapter 7
Figure 7.1 Schematic representation of (a) parallel plate capacitor filled wit...
Figure 7.2 Schematic of (a) ferroelectric and dielectric stack as a layered st...
Figure 7.3 Schematic representation of non-centrosymmetric atom movement in fe...
Figure 7.4 Schematic representation of ferroelectricity in perovskite ferroele...
Figure 7.5 Schematic representation of central atom movement direction in (a) ...
Figure 7.6 Schematic representation of NC identification in the ferroelectric ...
Chapter 8
Figure 8.1 Types of biosensors.
Figure 8.2 Blocks of biosensor.
Figure 8.3 Cross-section view of DM-DCTGTFET biosensor [46].
Figure 8.4 (a) Drain current versus gate voltage and (b) relationship between ...
Chapter 9
Figure 9.1 Energy band diagrams of transparent conducting oxides.
Figure 9.2 Elaboration of different kinds of defects in crystal lattice.
Figure 9.3 Estimated band gaps of popular metal based TCO host structures.
Figure 9.4 Structure and examples of conductive polymers.
Figure 9.5 Structure of metal grid and its types.
Figure 9.6 Structure of (a) single walled and (b) multi-walled CNTs.
Figure 9.7 (a) Structure of graphene.
Figure 9.7 (b) Graphene based materials and their applications.
Figure 9.8 Schematic diagram of the sol–gel synthesis process.
Figure 9.9 Reaction scheme of the sol–gel process.
Figure 9.10 Working mechanism of a solar cell.
Figure 9.11 Components of a display device.
Figure 9.12 Schematic diagram showing the structure of an OLED.
Figure 9.13 An image of TCO coatings.
Figure 9.14 Metal oxide-based gas sensors.
Chapter 10
Figure 10.1 Schematic representation of (a) biosensor design and its component...
Figure 10.2 Schematic illustration of (a) ferroelectric cylindrical nanocrysta...
Figure 10.3 Schematic illustrations of ferroelectric utilization in (a) biomol...
Figure 10.4 Schematic representation of some common transistor configurations ...
Figure 10.5 (a) Schematic illustration of the ferroelectric FETs application a...
Chapter 11
Figure 11.1 Three representative materials with ferroelectric properties.
Figure 11.2 Illustration describing the principle and advantages of FeFET.
Figure 11.3 Basic operation principle of ferroelectric materials.
Guide
Cover Page
Table of Contents
Series Page
Title Page
Copyright Page
Preface
Acknowledgements
Begin Reading
About the Editors
Index
Also of Interest
Wiley End User License Agreement
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Scrivener Publishing 100 Cummings Center, Suite 541J Beverly, MA 01915-6106
Scope:Nanoelectronic devices such as double gate MOSFET, FinFET, Nanowire, CNTFET, TFET, FeFET, Gate All Around (GAA), HEMT, and spin-based devices are used for chip design. The study of these devices is important for sectors whose applications in chip design have a huge impact for bringing revolutionary advances in nanoelectronic devices, circuits and systems due to improved electronic properties of the nanoscale semiconductor devices. The knowledge and resources for the fabrication of these nanoelectronic devices is also available, as its fabrication flow is similar to conventional MOSFET. It is predicted by the International Technology Road Map for Semiconductors (ITRS) that, with advancement of technology the conventional fabrication flow can be used for nanoelectronic devices. Artificial intelligence (AI), machine learning (ML), and advanced electronic circuits involve learning from every data input and using those inputs to generate new rules for future business analytics. AI and machine learning are now giving us new opportunities to use big data, as well as unleash new use cases with new data types. With the increasing use of AI dealing with highly sensitive information such as healthcare, adequate security measures are required to securely store and transmit this information. This book series will provides a broader coverage of the basic aspects of advanced circuits design and applications in AI/ML.
This Wiley-Scrivener book series presents concise summaries of cutting-edge research and practical applications across a wide spectrum in the field advanced devices, circuits and systems for AI applications. The series covers a range of content from professional to academic. Typical topics might include timely report of state-of-the art analytical techniques, a bridge between new research results, as published in journal articles, and a contextual literature review, a snapshot of a hot or emerging topic, an in-depth case study or clinical example and a presentation of core concepts that students must understand in order to make independent contributions.
Publishers at Scrivener Martin Scrivener ([email protected]) Phillip Carmical ([email protected])
FeFET Devices, Trends, Technology and Applications
Edited by
Balwinder Raj
Shiromani Balmukund Rahi
and
Nandakishor Yadav
This edition first published 2025 by John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, USA and Scrivener Publishing LLC, 100 Cummings Center, Suite 541J, Beverly, MA 01915, USA © 2025 Scrivener Publishing LLC For more information about Scrivener publications please visit www.scrivenerpublishing.com.
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Library of Congress Cataloging-in-Publication Data
ISBN 9781394287277
Front cover images supplied by Adobe Firefly Cover design by Russell Richardson
Preface
Ferroelectric materials and devices are essential components of nonvolatile memory systems like FeRAM, wherein their polarization changes are employed for encoding binary information. These are additionally used in a variety of sensors, such as temperature and piezoelectric meters, to take advantage of their outstanding piezoelectric capabilities. Ferroelectric nanowires may be made using processes like chemical vapor deposition and sol-gel procedures, which allow for precise oversight of their diameters. This book explores the characteristics, novel materials used, modification in device structure, and advancement of model FET devices. Even though many devices, following Moore’s law and more than Moore, are proposed and designed, a complete history of the existing and proposed semiconductor devices is not available to the readers. The book focuses on developments and research that is undergone in emerging ferroelectric FET devices and their applications. It also provides unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices to motivate young researchers.
The scope of the book is generic and provides an easy-to-understand approach, making it excellent for those who are new to the subject, and hence, it would be for scientists, researchers, and postgraduate students who are interested in learning the latest emerging ferroelectric materials, nanoscale devices, and its properties. The reader of the book is able to get an insight analysis of all the recent developments and developed ferroelectric device structures along with their applications. The properties, characterization, and their relative applications are proposed in a different manner. This book provides the state-of-the-art research techniques available in the field of ferroelectric and its devices research connected to the applications. The students also find the applications of nanoscale semiconductor devices in this book which makes them feel interesting. A brief summary of the chapters is given below:
Chapter 1: The evolution of silicon-based complementary metal-oxide semiconductor (CMOS) technology has been essential in shaping modern semiconductor electronics. In this evolution, the steady scaling of transistors has contributed a lot, and these steady developments of transistors enabled the recent high-performance semiconductor chips. In this book chapter, we are going to explore the historical scaling advancements in CMOS technology, highlighting the challenges faced in the past and present. Past challenges encompassed issues such as short-channel effects and leakage currents, while current challenges revolve around power dissipation and quantum effects at nanoscale dimensions. Looking forward, the chapter also discusses potential future innovations including novel materials, device architectures, and computing paradigms. By addressing these challenges and embracing new technologies, Si-based CMOS is poised to continue its transformative journey in the semiconductor industry. Even though there are still a couple of issues to be overcome, it seems like the CMOS technology is able to keep on improving, with the help of material development and fabrication-equipment development. This chapter has been written to understand the basic principles of semiconductors and the demands for improving scaling and subthreshold swing, which are essential for designing FeFET.
Chapter 2: Ferroelectric polymers in organic field-effect transistors (OFETs) have garnered significant attention as they offer cost-effective means and simplified manufacturing processes based on solution process-ability and flexible memory modules. They can be fabricated by various solution processing techniques such as spin coating, Langmuir-Blodgett, ink-jet printing, and roll-to-roll printing. Organic ferroelectric field-effect transistors (FeFETs) can be used in large electronic applications: flexible displays, sensors, radio frequency identification (RFID) tags, etc. An additional benefit of PVDF copolymers like poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is their ability to rapidly crystallize into the β phase. The β phase shows the maximum dipole moment within various reported polar phases. Ferroelectric polymer material–based devices have shown good memory functionalities which can have great significance for various applications. Particularly, OFET having ferroelectric polymer as a gate dielectric layer has attracted huge interest because of their large potentiality aimed at the growth of nonvolatile memory devices at low cost. This work highlights the diverse applications of FeFETs in advancing nonvolatile memory, artificial synapses, and wearable technologies, leveraging ferroelectric polymers.
Chapter 3: Advancement in next-generation technologies demands multifunctional devices with ultrafast speed, low cost, and smaller size. Therefore, immense efforts are being made to understand the complex and cooperative behavior of current, charge, electric dipole moments, and/or spin degrees of freedom of materials. For example, ferroelectrics (a non-centrosymmetric material with switchable spontaneous polarization) near or below the size of 3.2 nm are appealing to explore their potential application for next-generation devices. Ferroelectric materials are generally used as a tuneable capacitor and data storage devices in various electronic systems such as mobiles, computers, space centers, and satellites. They can also be utilized as crucial electronic components such as a phase shifter, electrocaloric effect-based cooler, memory, and energy harvester in satellites and/or space flight-based advance devices. To improve the functionality of these materials further, extensive studies are required. We briefly present here the basic concept of ferroelectricity, necessities, facile and advanced synthesis techniques, and potential applications of ferroelectric materials in novel devices.
Chapter 4: This chapter introduces a hetero-buried oxide (HBOX)–ferroelectric tunnel FET. Numerous electrical parameters are tuned concerning the silicon and BOX layer thickness adjustment, including ON/OFF-state currents and ION/IOFF ratio. A negative capacitance–based ferroelectric gate stack is also introduced for obtaining the steep subthreshold slope (SS). To ensure compatibility with the typical FET production approach, a ferroelectric (Fe) layer comprised of silicon-doped hafnium oxide is employed at the bottom of the gate. The Fe layer thickness is carefully optimized to improve Analog and DC parameters. A doped pocket (n+) has been imparted within the source in conjunction with the gate overlapping and drain underlapping. In addition to the design features, a pocket improves the electric field around the tunnel junction, making it more likely for the carriers to tunnel toward the channel. The heteroburied oxide is integrated into the silicon-on-insulator material. A high k-BOX remains at the source and a low k-BOX is exploited at the drain sides to minimize the ambipolar properties of the TFET and increase the ON-state current. The proposed structure’s characteristics have been optimized to accommodate changes in its physical dimensions. This arrangement provides a 38.5 mV/dec subthreshold slope and an ION/IOFF ratio of around 109. The Fe HBOX TFET is known to operate at an impressive speed, depending on the capacitances recovered from it. It is suitable for analog/RF applications as it exhibits superior transconductance and a reduced amount of output conductance. The steep subthreshold slope makes it ideal for low-power-demanding applications. The proposed ferroelectric TFET device evaluations are performed with the Sentaurus TCAD 2D software.
Chapter 5: A thorough analysis of ferroelectric materials in cutting-edge nanoelectronics devices is presented here. Ferroelectric material–based FETs describe how mitigating the problem arises in conventional CMOS. A ferroelectric polarization field is injected into a field-effect transistor (FET) to control semiconductor carriers, resulting in a ferroelectric field-effect transistor (FeFET). This article compares several ferroelectric materials’ characteristics, such as HfO2, PZT, and other 2D materials, and shows how ferroelectricity varies with temperature. After outlining the distinct electrical and physical characteristics of ferroelectric materials, we concentrate on different structures of field-effect transistors with ferroelectric materials based on 2D and 3D structures. FeFET’s different architectures, such as MFS and MFIS, and applications based on these structures are also given. The various FeFET structures are compared to each other in terms of performances and limitations to the real world. The other structures of field-effect transistors are proposed based on ferroelectric materials for various applications such as memory and sensors. To pique the attention of scientists interested in the continued development of this rapidly developing field of study, this article thoroughly analyzes the current and upcoming challenges in ferroelectric-based nanoelectronics. FeFETs are appealing for cutting-edge electrical and optoelectronic applications, such as developing memory, artificial neural networks, high-performance photodetectors, and intelligent sensors due to their ferroelectric and semiconductor flexible interaction. In this review, we also covered the potential applications of FeFET in the future for better device operation and which ferroelectric materials have the best FeFET structure and can retain ferroelectricity up to 1-nm technology.
Chapter 6: This chapter investigates how negative capacitance (NC) from ferroelectric materials can be incorporated into existing double-gate tunnel field-effect transistors (DG-TFETs). This approach aims to overcome the limitations of conventional FETs (bulk MOSFETs, FinFETs, GAAFETs, and nanosheet FETs) in ultralow power applications. This chapter explores how ferroelectric gate materials can improve performance in double-gate tunnel field-effect transistors (DG-TFETs). This approach allows for lower power supply voltages without sacrificing key device characteristics like on-current (ION), off-current (IOFF), and their ratio (ION/IOFF). Experiments show impressive results, achieving very low leakage currents (IOFF around 10-20 A/µm) and ultralow on-currents (ION around 10-5 A/µm while significantly reducing subthreshold swing (SS). The chapter also addresses the challenges of integrating TFETs with existing CMOS technology. Solutions like using materials with smaller bandgaps and implementing type II staggered heterojunctions are proposed to improve tunneling efficiency and boost on-current. Overall, this study highlights the potential of ferroelectric materials to revolutionize low-power electronics. By enhancing DG-TFET performance, these materials pave the way for significantly lower power supply voltages in future semiconductor devices.
Chapter 7: Internal heating in portable devices is one of the most challenging tasks in front of researchers owing to excessive utilization of it in the daily lives of people worldwide. So, these devices are an ingenuous part of our lives owing to the capability to have an excess amount of information and its utilization. These devices contain smaller-size (nanosize) constituents that have better quality in almost all prospectives than their older counterparts. In the present scenario, these devices must consume less power to improve their applicability and utilization for a longer duration. The negative capacitance (NC) features developed in the field-effect transistor (FET) owing to the presence of the ferroelectric materials in the gate stack reduces the subthreshold limit and leakage current which make NCFET an important part of present portable as well as advanced devices. This chapter describes pieces of evidence of NC in the ferroelectric material sandwiched within the gate stack and its performance on NCFET transistor applicability. It also covers the present status of evidence of NC in hafnia, AlScN, and fluorite-based advanced and futuristic ferroelectric transistors and its futuristic perspective role in NCFET devices.
Chapter 8: Tunnel field-effect transistor (TFET)–based biosensors represent a cutting-edge technology with immense potential for revolutionizing the landscape of sensing and diagnostics. Their versatility, sensitivity, and compatibility with emerging nanotechnologies position TFET biosensors at the forefront of innovation, opening new avenues for applications in healthcare, environmental monitoring, and beyond. As research in this field continues to progress, TFET biosensors are poised to play a pivotal role in shaping the future of analytical and diagnostic sciences. TFET biosensors operate on the principle of detecting changes in the electrical characteristics of a semiconductor channel induced by biomolecular interactions at the sensor surface. The intrinsic sensitivity of TFETs to charge variations makes them ideal candidates for the real-time, label-free detection of various biomolecules, such as proteins, nucleic acids, and small molecules.
Chapter 9: This chapter gives an elaboration of the distinct class of semiconductor materials, known as transparent conducting oxides (TCO). These materials have novel characteristics on account of exhibiting the unusual combination of two contemporary properties: high optical transparency and high electrical conductivity. These unique optoelectronic properties of these materials depend upon different parameters which are also deeply discussed in the chapter. For the optical properties, contributing factors like optical gap, hybridization of the orbitals, defects, and doping are discussed in detail. On a similar platform, effective masses and electron distribution laws are discussed in order to justify the electrical properties of the TCOs. Furthermore, different types of TCO materials are also discussed in the chapter. The materials are elaborated with their structures that are responsible for imparting unique properties to the specific material. Transparent conducting oxides form the backbone of modern technology owing to the unique combination of transparency and conductivity. The chapter also describes different routes to deposit the transparent conducting oxides in the form of nanostructures like thin films and nanoparticles. Deposition techniques play a significant role in imparting specific properties to the deposited nanostructures. The two types of deposition techniques, i.e., physical deposition techniques and chemical deposition techniques, along with the specific requirements are explored in the chapter. Among the chemical deposition techniques, the chapter lays special emphasis on the sol-gel–based spin-coating technique on account of it being the most inexpensive and easy-to-handle deposition technique. Furthermore, the importance of transparent conducting oxides from the application point of view is discussed. The application of transparent conducting oxides in photovoltaics, display devices, sensors, and multifunctional coatings is also elaborated in detail.
Chapter 10: Owing to the versatile ability to interact with various types of external disturbances such as light, force, heat, and electricity, ferroelectric plays a special role in several devices like traducers, ferroelectric random-access memory, FeFET, ferroelectric tunnel junction, ferroelectric diodes, and nanobiosensors. The characteristic feature of ferroelectrics enhances performance in FeFET biosensors compared to conventional FET biosensors. This is due to improvements in the subthreshold swing slope, better control over the channel, and lower power consumption. Additionally, ferroelectric biosensors outperform traditional biosensors because of the induced spontaneous polarization resulting from interactions with biomolecule energy and/or physical stimuli. Due to this property of ferroelectrics, the output characteristics of ferroelectric biosensors and FeFET biosensors are improved. This is because the excess availability of carriers at the interface surface results from the additional generation of spontaneous polarization, which induces electron-hole pairs. Consequently, this leads to enhanced sensitivity, selectivity, and quicker response times. To further understand the functionality of ferroelectric, extensive studies are required. Herein, we summarize the ferroelectric-based biosensor design, working principle, complex interaction mechanisms, and monitoring efficiency toward the specific targeted biomolecule (or analyte) in the presence of interfering contents. In addition, a detailed discussion of its applications in human health, environmental, and agricultural monitoring, supported by recent reports, is provided in the chapter. It also gives insights into the future perspective of ferroelectricity in biosensor devices.
Chapter 11: Recently, ferroelectric materials have garnered considerable attention in the field of material and electronic engineering due to their potential uses in nanoscale devices, spurred by the ongoing scaling of semiconductor technology as outlined in the International Technology Roadmap for Semiconductors (ITRS) and other engineering organization. This chapter is going to give some introduction to ferroelectric applications, elucidating the characteristics of ferroelectric materials and discussing the fundamental scaling principles outlined in the ITRS roadmap. This chapter then explores the realm of nanoscale devices, examining various configurations such as ultrathin body MOSFETs, gate-all-around MOSFETs, and advanced engineering techniques such as local high doping. Furthermore, this chapter investigates the incorporation of ferroelectric materials into various modern nanoscale devices, emphasizing their possible advantages and potential applications. Additionally, this chapter is also going to examine the placement of ferroelectric technologies within the ITRS roadmap framework and provide insights into the future prospects of ferroelectric applications in the semiconductor industry as well. All in all, it seems like with the help of the guideline provided by the ITRS roadmap and advancement of ferroelectric materials, the semiconductor devices (including memory devices and memory devices) would be able to further able to achieve more improvement in terms of low power consumption and fast switching operation.
Chapter 12: Electron mobility is one of the most important parameters in electronic applications and transistor design. With the advent of the recent ferroelectric field-effect transistor (FeFET), the importance of understanding electron mobility has become more and more significant. In this regard, this chapter is going to address recent electron mobility models for FeFET. From the classical electron mobility models to quantum mechanical electron mobility models, various electron models are explained so that the readers can understand the electron mobility concept in modern semiconductor transistors with more ease. Specifically, as the dimension of the device has been decreased over and over again, various complex quantum mechanisms made it difficult to interpret the movement of electrons and calculate electron mobility. In this chapter, we would like to look into the recent electron mobility models which have been developed for modern transistors and aimed to have high accuracy, compared to the conventional electron mobility models.
Acknowledgements
This book is based on research work carried out by a number of authors. Many people have contributed greatly to this book on FeFET devices, trends, technology and applications. We would like to thank and acknowledge the efforts and support of all contributors for completing the book. We are also grateful for a number of friends and colleagues in encouraging us to start work on this book. We as the editors would like to acknowledge all of them for their valuable help and generous ideas in improving the quality of this book. With our feelings of gratitude, we would like to introduce them in turn. The first mention is the authors and reviewers of each chapter of this book. Without their outstanding expertise, constructive reviews, and devoted effort, this comprehensive book would become something without content. The second mention is the Wiley and Scrivener staff for their constant encouragement, continuous assistance, and untiring support. Without their technical support, this book would not be completed. The third mention is the editor’s family for being the source of continuous love, unconditional support, and prayers not only for this work but also throughout our lives. Last but far from least, we express our heartfelt thanks to the Almighty for bestowing over us the courage to face the complexities of life and complete this work.
Balwinder RajShiromani Balmukund RahiNandakishor YadavJuly 2024
