Frontiers in Electronic Materials E-Book

• Herausgeber: Wiley-VCH
• Kategorie: Wissenschaft und neue Technologien
• Sprache: Englisch

Seitenzahl: 1204

Veröffentlichungsjahr: 2013

Beschreibung

This collection of extended abstracts summarizes the latest research as presented at "Frontiers in Electronic Materials", a Nature conference on correlation effects and memristive phenomena, which took place in 2012.

The contributions from leading authors from the US, Japan, Korea, and Europe discuss breakthroughs and challenges in fundamental research as well as the potential for future applications.

Hot topics covered include:

• Electron correlation and unusual quantum effects
• Oxide heterostructures and interfaces
• Multiferrroics, spintronics, ferroelectrics and flexoelectrics
• Processing in nanotechnology
• Advanced characterization techniques
• Superionic conductors, thermoelectrics, photovoltaics
• Chip architectures and computational concepts

An essential resource for the researchers of today and tomorrow.

Leseprobe

Invited Talks

INV 1: NEW MAGNETIC MATERIALS BASED ON DEFECTS, INTERFACES AND DOPING

INV 2: ATOMIC-RESOLUTION ELECTRON SPECTROSCOPY OF INTERFACES AND DEFECTS IN COMPLEX OXIDES

INV 3: SIGNIFICANCE OF SOLID STATE IONICS FOR TRANSPORT AND STORAGE

INV 4: ELECTROCHEMICAL DOPING OF OXIDE HETEROSTRUCTURES

INV 5: SWITCHABLE PHOTODIODE EFFECT IN FERROELECTRIC BiFeO3

INV 6: EXPLORATION OF ELECTRON SYSTEMS AT OXIDE INTERFACES

INV 7: THE INFLUENCE OF IMPERFECTIONS ON THE 2DEG TRANSPORT PROPERTIES IN THE LaAlO3-SrTiO3 SYSTEM

INV 8: CORRELATED ELECTRONIC MATERIALS: COMPUTATIONAL STUDIES OF MULTIORBITAL MODELS FOR BULK COMPOUNDS AND INTERFACES OF MAGNETIC AND SUPERCONDUCTING MATERIALS

INV 9: ELECTROLYTE GATE INDUCED METALLIZATION OF SEVERAL FACETS (101, 001, 110 and 100) OF RUTILE TiO2 AND (001) SrTiO3

INV 10: COMPLEX THERMOELECTRIC MATERIALS

INV 11: PCRAM OPERATION AT DRAM SPEEDS: EXPERIMENTAL DEMONSTRATION AND COMPUTER-SIMULATIONAL UNDERSTANDING

INV 12: ELECTRONIC PHASE CHANGE AND ENTROPIC FUNCTIONS IN TRANSITION METAL OXIDES

INV 13: DISORDER INDUCED METAL-INSULATOR TRANSITION IN PHASE CHANGE MATERIALS

INV 14: ELECTRONIC PROPERTIES OF THE INTERFACIAL LaAlO3 / SrTiO3 SYSTEM

INV 15: EMERGENT PHENOMENA IN TWO-DIMENSIONAL ELECTRON GASES AT OXIDE INTERFACES

INV 16: GIANT TUNNEL ELECTRORESISTANCE IN FERROELECTRIC TUNNEL JUNCTIONS

INV 17: REVISITING THE HEXAGONAL MANGANITES

INV 18: STUDY OF MAGNETOELECTRIC EFFECTS DUE TO MULTI-SPIN VARIABLES

INV 19: BI-LAYERED RERAM: MULTI-LEVEL SWITCHING, RELIABILITY AND ITS MECHANISM FOR STORAGE CLASS MEMORY AND RECONFIGURATION LOGIC.

INV 20: SELF-ORGANIZATION IN ADAPTIVE, RECURRENT, AUTONOMOUS MEMRISTIVE CROSSNETS

INV 21: ELECTRIC FIELD CONTROL OF MAGNETIZATION

INV 22: MAGNETIC SWITCHING OF FERROELECTRIC DOMAINS AT ROOM TEMPERATURE IN A NEW MULTIFERROIC

INV 23: CONTROL OF CORRELATED ELECTRONS IN METAL-OXIDE SUPERLATTICES

INV 24: METAL-INSULATOR TRANSITIONS OF CORRELATED ELECTRONS IN OXIDE HETEROSTRUCTURES

INV 25: THEORETICAL DESIGN OF TOPOLOGICAL PHENOMENA

INV 26: MAGNETIC RECONSTRUCTIONS IN PEROVSKITE HETEROINTERFACES AND ULTRATHIN FILMS

INV 27: PROGRESS IN THE ATOMIC SWITCH

Nanosessions

2DA 1: HIGHLY CONFINED SPIN-POLARIZED TWO-DIMENSIONAL ELECTRON GAS IN SrTiO3/SrRuO3 SUPERLATTICES

2DA 2: FIRST-PRINCIPLES STUDY OF INTERMIXING AND POLARIZATION AT THE DyScO3/SrTiO3 INTERFACE

2DA 3: ATOMIC-SCALE SPECTROSCOPY OF AN OXIDE INTERFACE BETWEEN A MOTT INSULATOR AND A BAND INSULATOR

2DA 4: INTERFACE ATOMIC STRUCTURE IN LaSrAlO4/LaNiO3/LaAlO3 HETEROSTRUCTURES

2DA 5: TAILORING THE ELECTRONIC PROPERTIES OF THE LAO/STO INTERFACE BY CONTROLLED CATION-STOICHIOMETRY VARIATION IN STO THIN FILMS

2DA 6: ELECTROSTATIC DOPING OF A MOTT INSULATOR IN AN OXIDE HETEROSTRUCTURE: THE CASE OF LaVO3/SrTiO3

2DA 7: THEORETICAL STUDY OF ORBITAL-, SPIN- AND CHARGE-RECONSTRUCTION IN LVO/STO HETEROSTRUCTURES

2DC 1: TWO-DIMENSIONAL ELECTRON GAS WITH ORBITAL SYMMETRY RECONSTRUCTION AND STRONG EFFECTIVE MASS LOWERING AT THE SURFACE OF KTaO3

2DC 2: STRAIN MEDIATED LONG-RANGE QUASI-ORDERED DOMAIN STRUCTURES AT THE SrTiO3 (110) SURFACE

2DC 3: FIRST-PRINCIPLES STUDY OF THE LaAlO3/SrTiO3 INTERFACE

2DC 4: FERROMAGNETISM DRIVEN BY SrTiO3 FERROELECTRIC-LIKE LATTICE DEFORMATION IN LaAlO3/SrTiO3 HETEROSTRUCTURES

2DC 5: COHERENT TRANSPORT IN MESOSCOPIC LaAlO3/SrTiO3 DEVICES

2DC 6: STRONGLY CORRELATED HIGH-MOBILITY ELECTRON GAS AT A MgZnO/ZnO INTERFACE

2DE 1: REVEALING THE FERMI SURFACE OF THE BURIED LaAlO3/SrTiO3 INTERFACE BY ANGLE RESOLVED SOFT X-RAY PHOTOELECTRON SPECTROSCOPY

2DE 2: NANOSCALE MODULATION OF THE LOCAL DENSITY OF STATES AT THE INTERFACE BETWEEN LaAlO3 AND SrTiO3 BAND INSULATORS

2DE 3: TUNING THE TWO-DIMENSIONAL ELECTRON GAS AT THE LaAlO3/SrTiO3(001) INTERFACE BY METALLIC CONTACTS

2DE 4: FIELD-EFFECT DEVICES UTILIZING OXIDE INTERFACES

2DE 5: GATE-CONTROLLED SPIN INJECTION AT LAO/STO INTERFACES

2DE 6: FIELD EFFECT MODULATION OF THE ELECTRON GAS AT THE LaAlO3/SrTiO3 INTERFACE : A THERMOELECTRIC STUDY

2DE 7: IS IT POSSIBLE FOR A La0.5Sr0.5TiO3 FERMI LIQUID TO EXIST IN A CONFINED TWO-DIMENSIONAL SYSTEM?

CAL 1: MECHANISM OF “PHONON GLASS – ELECTRON CRYSTAL” BEHAVIOUR IN THERMOELECTRIC LAYERED COBALTATE

CAL 2: SIGN REVERSAL OF THE TUNNELING MAGNETO SEEBECK EFFECT

CAL 3: AB-INITIO INVESTIGATION OF MAGNETIC KONBU PHASES AS NANOSTRUCTURES WITH SPIN-CALORIC-TRANSPORT PROPERTIES

CAL 4: CHARGE KONDO EFFECT IN THERMOELECTRIC PROPERTIES OF LEAD TELLURIDE DOPED WITH THALLIUM IMPURITIES

CAL 6: STRONG PHONON SCATTERING AND GLASSLIKE THERMAL CONDUCTIVITY IN CRYSTALLINE PHASE CHANGE MATERIALS

CAL 7: TAILORING THERMOPOWER AND CARRIER MOBILITY IN NANOSTRUCTURED HALF-HEUSLERS

TOP 1: ANOMALOUS HALL EFFECT IN GRAPHENE DECORATED WITH 5d TRANSITION-METAL ADATOMS

TOP 2: SPIN POLARIZED PHOTOEMISSION FROM Bi2Te3 AND Sb2Te3 TOPOLOGICAL INSULATOR THIN FILMS

TOP 3: INSTABILITIES OF INTERACTING ELECTRONS ON THE HONEYCOMB BILAYER

TOP 4: FIELD-INDUCED POLARIZATION OF DIRAC VALLEYS IN BISMUTH

TOP 5: PEIERS DIMERIZATION AT THE EDGE OF 2D TOPOLOGICAL INSULATORS?

TOP 6: PREDICTING TOPOLOGICAL SURFACE STATES FROM THE SCATTERING PROPERTIES OF THE BULK

MIT 1: ELECTRIC-FIELD CONTROL OF THE FIRST ORDER METAL-INSULATOR TRANSITION IN VO2

MIT 2: COLOSSAL MAGNETORESISTANCE AND HALF-METAL BEHAVIOR IN THE DOPED MOTT INSULATOR GaV4S8

MIT 3: THE SPIN-STATE AND METAL-INSULATOR TRANTIONS IN LnCoO3

MIT 4: SPIN-SPECTRAL-WEIGHT DISTRIBUTION AND ENERGY RANGE OF THE PARENT COMPOUND La(2)CuO(4)

MIT 5: SUPERCONDUCTIVITY DRIVEN IMBALANCE OF THE MAGNETIC DOMAIN POPULATION IN CeCOIn5

MIT 6: RUBIDIUM SUPEROXIDE: A P-ELECTRON MOTT INSULATOR

MIT 7: HIGH MOBILITY IN A STABLE TRANSPARENT PEROVSKITE

SAS 1: SHEDDING LIGHT ON ARTIFICIAL QUANTUM MATERIALS AND COMPLEX OXIDE INTERFACES WITH ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY

SAS 2: HARD AND SOFT X-RAY PHOTOEMISSION STUDIES OF OXIDE MULTILAYER BAND OFFSETS AND OF ELECTRONIC STRUCTURE IN LaNiO3/SrTiO3 AND GdTiO3/SrTiO3

SAS 3: EVIDENCE FOR Fe2+ CONFIGURATION IN Fe:STO THIN FILMS BY X-RAY ABSORPTION SPECTROSCOPY

SAS 4: PHOTOELECTRON AND RECOIL DIFFRACTION AT HIGH ENERGIES FOR BULK-SENSITIVE AND ELEMENT-RESOLVED CRYSTALLOGRAPHIC ANALYSIS OF MATERIALS

SAS 5: HARD X-RAY ANGLE-RESOLVED PHOTOEMISSION AS A BULK-SENSITIVE PROBE OF ELECTRONIC STRUCTURE

SAS 6: HAXPEEM – SPECTROSCOPIC IMAGING OF BURIED LAYERS USING HARD X-RAYS

SAS 7: MARIA: THE MODERN NEUTRON REFLECTOMETER OF THE JCNS OPTIMISED FOR SMALL SAMPLE SIZES AND THINS LAYERS

TEM 1: TRANSMISSION ELECTRON MICROSCOPY OF FUNCTIONAL PEROVSKITE OXIDE HETEROSTRUCTURES

TEM 2: NiO PRECIPITATES IN LaNiO3/LaAlO3 SUPERLATTICES INDUCED BY A POLAR MISMATCH

TEM 3: MINIMUM ENERGY CONFIGURATION OF SCANDATE/TITANATE INTERFACES: ORDERED INTERFACES

TEM 4: RUDDLESDEN–POPPER TYPE FAULTS IN LaNiO3/LaAlO3 SUPERLATTICES

TEM 5: ATOMIC STRUCTURE OF TRIMERIZATION-POLARIZATION DOMAIN WALLS IN HEXAGONAL ErMnO3

NTS 1: CONSTRUCTION AND FIRST RESULTS OF AN STM OPERATING AT MILLI-KELVIN TEMPERATURES

NTS 2: QUANTITATIVE FORCE IMAGING OF THE ATOMS IN EPITAXIALLY GROWN GRAPHENE

NTS 3: RADIO FREQUENCY OPTIMIZED SCANNING TUNNELING MICROSCOPE FOR THE USE WITH PULSED TUNNELING VOLTAGES

NTS 4: ULTRA COMPACT 4-TIP STM/AFM FOR ELECTRICAL MEASUREMENTS AT THE NANOSCALE

NTS 5: NANOSCALE MECHANICAL CHARACTERIZATION OF THIN FILMS with Different TopologiCAL STRUCTURES

NTS 6: ELECTRONIC ACTIVATION IN THE (La0.8Sr0.2)CoO3/(La0.5Sr0.5)2CoO4 SUPERLATTICES AT HIGH TEMPERATURE

NTS 7: THE SEM/FIB WORKBENCH: Automated Nanorobotics system inside of Scanning Electron or Focussed Ion Beam Microscopes

PCA 1: DENSITY FUNCTIONAL THEORY STUDY OF ANDERSON METAL-INSULATOR TRANSITIONS IN CRYSTALLINE PHASE-CHANGE MATERIALS

PCA 2: LARGE SCALE MOLECULAR DYNAMICS SIMULATIONS OF PHASE CHANGE MATERIALS

PCA 3: QUANTUM-CHEMICAL ANALYSIS OF ATOMIC MOTION IN Ge-Sb-Te PHASE-CHANGE ALLOYS

PCA 4: SIMULATION OF RAPID CRYSTALIZATION IN PHASE CHANGE MATERIALS BY MEANS OF PHASE FIELD MODELING

PCA 5: EPITAXYAL PHASE CHANGE MATERIALS: GROWTH, STRUCTURE AND PHASE TRANSITION

PCA 6: EFFECT OF CARBON AND NITROGEN DOPING ON THE STRUCTURE AND DYNAMICS OF AMORPHOUS GeTe PHASE CHANGE MATERIAL

PCM 1: EXPLOITING THE MEMRISTIVE-LIKE BEHAVIOUR OF PHASE-CHANGE MATERIALS AND DEVICES FOR ARITHMETIC, LOGIC AND NEUROMORPHIC PROCESSING

PCM 2: INVERSE TIME-VOLTAGE RELATION OF THRESHOLD SWITCHING IN PHASE CHANGE MATERIALS

PCM 3: INTERPLAY OF DEFECTS AND CHEMICAL BONDING IN THE “GST” FAMILY OF PHASE-CHANGE MATERIALS

PCM 4: PHOTONICS-BASED NON-VOLATILE MEMORY DEVICE USING PHASE CHANGE MATERIALS

PCM 5: ROLE OF ACTIVATION ENERGY IN RESISTANCE DRIFT OF AMORPHOUS PHASE CHANGE MATERIALS

PCM 6: Ge2Sb2Te5 LINE TEST-STRUCTURES FOR PHASE-CHANGE NON VOLATILE MEMORIES

PCM 7: IN SITU TRANSMISSION ELECTRON MICROSCOPY STUDY OF THE CRYSTALLIZATION OF BITS IN Ag4In3Sb67Te26

SPO 1: TEMPLATED ADSORPTION AT THE Fe3O4(001) SURFACE: THE EFFECT OF SUBSURFACE CHARGE AND ORBITAL ORDER

SPO 2: EXPLORING ROUTES TO TAILOR THE ELECTRONIC PROPERTIES OF THIN-OXIDE FILMS ON METAL SUPPORTS

SPO 3: PREPARATION AND CHARACTERIZATION OF THIN MgO FILMS DOPED WITH NITROGEN

SPO 4: SCANNING TUNNELING MICROSCOPY STUDY OF SINGLE-CRYSTALLINE Sr3Ru2O7

SPO 5: BIMETALLIC ALLOYS AS MODEL SYSTEMS FOR THE GROWTH OF ULTRATHIN METAL OXIDE FILMS

SPO 6: ELECTROSTATIC FIELD EFFECT MODULATION OF SHUBNIKOV-DE HAAS OSCILLATIONS IN LaAlO3/SrTiO3

LDC 1: SELF-RECTIFYING RESISTIVE MEMORY DEVICES

LDC 2: THE DESIRED MEMRISTOR FOR CIRCUIT DESIGNERS

LDC 3: COMPLEMENTARY RESISTIVE SWITCH-BASED ASSOCIATIVE MEMORY CAPABLE OF FULLY PARALLEL SEARCH FOR MINIMUM HAMMING DISTANCE

LDC 4: COMPUTATIONAL CONCEPT BASED ON COMPLEMENTARY RESISTIVE SWITCHES

LDC 5: LOGIC OPERATIONS IN PASSIVE COMPLEMENTARY RESISTIVE SWITCH CROSSBAR ARRAYS

LDC 6: A NON-VOLATILE LOW-POWER ZERO-LEAKAGE NANOMAGNETIC COMPUTING SYSTEM

NMC 1: AN ELECTRONIC VERSION OF PAVLOV`S DOG

NMC 2: NEUROMORPHIC FUNCTIONALITIES OF NANOSCALE MEMRISTORS

NMC 3: DEMONSTRATION OF IMPLICITE MEMORY IN ELECTRONIC CIRCUITS BY USING MEMRESISTIVE DEVICES

NMC 4: USAGE OF NANOELECTRONIC RESISTIVE SWITCHES WITH NONLINEAR SWITCHING KINETICS IN HYBRID CIRCUITS FOR LINEAR CONDUCTANCE ADAPTATION

NMC 5: Pt/HfO2/TiN/Al ON SiO2 WITH POTENTIAL APPLICATIONS TO MEMORY AND NEUROMORPHIC CIRCUITS

NMC 6: MEMRISTORS: TWO CENTURIES ON

ECM 1: ATOM/ION MOVEMENT CONTROLLED THREE-TERMINAL DEVICE: ATOM TRANSISTOR

ECM 2: QUANTUM CONDUCTANCE OF AGI BASED RESISTIVE SWITCHES: TOWARDS AN ATOMIC SCALE MEMORY

ECM 3: DYNAMIC GROWTH/DISSOLUTION OF CONDUCTIVE FILAMENT IN OXIDE-ELECTROLYTE-BASED RRAM

ECM 4: IN-SITU HARD X-RAY PES POLARIZATION MEASUREMENTS OF OXIDE AMORPHOUS FILMS UNDER INTENSE ELECTRICAL FIELD

ECM 5: SPECTROSCOPIC INVESTIGATION OF Charge Transfer in Electrochemical Metallization Memory CELL

ECM 6: CHARACTERIZATION OF GERMANIUM SULFIDE THIN FILMS GROWN BY HOT WIRE CHEMICAL VAPOR DEPOSITION

ECM 7: NANOFILAMENT RELAXATION MODEL FOR SIZE-DEPENDENT RESISTANCE DRIFT IN ELECTROCHEMICAL MEMORIES

VCR 1: ION MIGRATION MODEL FOR RESISTIVE SWITCHING IN TRANSITION METAL OXIDES

VCR 2: SIMULATION STUDIES OF THE MATERIAL DEPENDENT SWITCHING PERFORMANCE OF VALENCE CHANGE MEMORY CELLS

VCR 3: ELECTRORESISTANCE VERSUS JOULE HEATING EFFECTS IN MANGANITE THIN FILMS

VCR 4: ON ELECTROFORMING FOR BIPOLAR SWITCHING

VCR 5: ROOM-TEMPERATURE KINETICS OF DEFECT MIGRATION IN NON-FRADAIC Pt/TiO2/Pt CAPACITORS

VCR 6: TANTALUM OXIDE ULTRA-THIN FILMS BY METAL OXIDATION FOR APPLICATION IN RESISTIVE RANDOM ACCESS MEMORY (RRAM)

VCR 7: RESISTIVE SWITCHING PHENOMENA IN LixCoO2 THIN FILMS

VCI 1: NANASCALE ANALYSIS OF FORMING AND RESISTIVE SWITCHING IN Fe:STO THIN FILM DEVICES

VCI 2: IN-OPERANDO HAXPES ANALYSIS OF THE RESISTIVE SWITCHING PHENOMENON IN Ti/HfO2-BASED SYSTEMS

VCI 3: THE OXYGEN VACANCY DISTRIBUTION IN RESISTIVE SWITCHING Fe-SrTiO3 MIM STRUCTURES BY μXAFS

VCI 4: MULTILEVEL RESISTIVE SWITCHING AND METAL –INSULATOR TRANSITION IN SOLUTION-DERIVED La1-xSrxMnO3 THIN FILMS

VCI 5: PUMP AND RELEASE SCENARIO FOR THE BIPOLAR RESISTIVE SWITCHING OF MEMRISTIVE MANGANITE-METAL INTERFACES

VCI 6: RESISTIVE SWITCHING IN NiO BASED NANOWIRE ARRAY FOR LOW POWER RERAM

VCI 7: EXPERIMENTAL EVALUATION OF THE TEMPERATURE IN CONDUCTIVE FILAMENTS CREATED IN RESISTIVE SWITCHING MATERIALS

VRS 1: FERROELECTRIC RESISTIVE SWITCHING AT SCHOTTKY-LIKE BiFeO3 INTERFACES

VRS 2: HOW CAN WE SWITCH THE RESISTIVITY OF A METALLIC PEROVSKITE OXIDE (SrTiO3:Nb) BY ELECTRICAL STIMULI?

VRS 3: PHYAICAL MECHANISM OF OXYGEN VACANCY MIGRATION IN Pt/Nb:SrTiO3 INTERFACES

VRS 4: MECHANISM OF RESISTIVE SWITCHING IN BIPOLAR TRANSITION METAL OXIDES

VRS 5: ELECTRIC FIELD INDUCED RESISTIVE SWITCHING IN A FAMILY OF MOTT INSULATORS: TOWARDS A MOTT-MEMRISTOR?

VRS 6: INTRINSIC DEFECTS IN TiO2 TO EXPLAIN RESISTIVE SWITCHING DEVICES

VRS 7: CONDUCTANCE QUANTIZATION IN RESISTIVE SWITCHING

MAG 1: HIGHLY SPIN-POLARIZED CONDUCTING STATE AT THE INTERFACE BETWEEN NON-MAGNETIC BAND INSULATORS: LaAlO3/FeS2 (001)

MAG 2: NEW INSIGHTS INTO NANOMAGNETISM BY SPIN-POLARIZED SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY

MAG 3: SELECTIVE ORBITAL OCCUPATION AT MANGANITE INTERFACES INDUCED BY CRYSTAL SYMMETRY BREAKING

MAG 4: SCALABLE EXCHANGE BIAS IN LSMO/STO THIN FILMS

MAG 5: STRUCTURAL AND MAGNETIC PROPERTIES OF NANOPARTICLE SUPERLATTICES

MAG 6: NANOPARTICLES OF ANTIFERROMAGNETIC AND FERRIMAGNETIC OXIDES AS MAGNETIC HETEROSTRUCTURES

MAG 7: SELF ASSEMBLED IRON OXIDE NANOPARTICLES – FROM A 2D POWDER TO A SINGLE MESOCRYSTAL

IOL 1: CHARACTERIZATION OF VACANCY-RELATED DEFECTS IN Fe-DOPED SrTiO3 THIN FILMS USING POSITRON ANNIHILATION LIFETIME SPECTROSCOPY

IOL 2: AB INITIO CALCULATIONS OF DEFECTS IN GALLIUM OXIDE

IOL 3: CATION DEFECT ENGINEERING IN STO THIN FILMS BY PLD -VERIFICATION AND IMPLICATIONS ON MEMRISTIVE PROPERTIES

IOL 4: STRUCTURAL RESPONSE OF SINGLE CRYSTAL SrTiO3 ON O-VACANCY MIGRATION IN THERMAL AND ELECTRICAL FIELDS

IOL 5: CRYSTAL-AND DEFECT-CHEMISTRY OF REDUCTION RESISTANT FINE GRAINED THERMISTOR CERAMICS ON BaTiO3-BASIS

IOL 6: RED-OX DRIVEN POINT DEFECT EQUILIBRIA, ANISOTROPIC CHEMICAL AND THERMAL EXPANSION AND FERROELASTICITY OF ACCEPTOR DOPED LaMO3 PEROVSKITE OXIDE AT THE NANO-SCALE

IOR 1: OXYGEN EXCHANGE KINETICS ON PEROVSKITE SURFACES: IMPORTANCE OF ELECTRONIC AND IONIC DEFECTS

IOR 2: ORDERS OF MAGNITUDE VARIATIONS IN THE ELECTRICAL CONDUCTION PROPERTIES OF ACCEPTOR AND DONOR DOPED STRONTIUM TITANATE ON DOWNSIZING

IOR 3: DYNAMIC SIMULATION OF OXYGEN MIGRATION IN TiO2

IOR 4: ATOMISTIC SIMULATION STUDY ON OXYGEN DEFICIENT STRONTIUM TITANATE

IOR 5: FIRST PRINCIPLE STUDY AND MODELING OF STRAIN-DEPENDENT IONIC MIGRATION IN ZIRCONIA

IOR 6: INVESTIGATIONS ON THE INTEGRATED CATHODES FOR HIGH ENERGY DENSITY LITHIUM RECHARGEABLE BATTERIES

SDY 1: VORTEX DOMAIN WALL DYNAMICS IN MAGNETIC NANOTUBES

SDY 2: SPIN-TORQUE DYNAMICS OF STACKED VORTICES IN MAGNETIC NANOPILLARS

SDY 3: PURE SPIN CURRENTS IN FERROMAGNETIC INSULATOR/NORMAL METAL HYBRID STRUCTURES

SDY 4: FEMTOSECOND SPIN DYNAMICS AND NANOMETER IMAGING WITH LASER-BASED EXTREME ULTRAVIOLET SOURCE

SDY 5: THEORETICAL STUDY OF ULTRAFAST LASER INDUCED MAGNETIC PRECESSIONS.

SDY 6: SPIN RELAXATION INDUCED BY THE ELLIOTT-YAFET MECHANISM IN 5d TRANSITION-METAL THIN FILMS

SIT 1: N-TYPE ELECTRON-INDUCED FERROMAGNETIC SEMICONDUCTOR (In,Fe)As

SIT 2: ELECTRICAL SPIN INJECTION AND SPIN TRANSPORT IN ZINC OXIDE

SIT 3: SPIN RELAXATION BY IMPURITY SCATTERING: IMPORTANCE OF RESONANT SCATTERING

SIT 4: EXPERIMENTAL AND THEORETICAL ANALYSIS OF OXYGEN-DEFICIENT EuO THIN FILMS

SIT 5: DELTA DOPED ANTIFERROMAGNETIC MANGANITES

SIT 6: SPIN-ORBIT MEDIATED TORQUES IN HETEROSTRUCTURES WITH STRUCTURAL INVERSION ASYMMETRY

STS 1: MAGNETICALLY ENHANCED MEMRISTOR

STS 2: NOVEL FUNCTIONALITIES AT INTERFACES IN La0.7Ca0.3MnO3/PrBa2Cu3O7/La0.7Ca0.3MnO3 MAGNETIC TUNNEL JUNCTIONS

STS 3: INTEGRATION OF A MAGNETIC OXIDE DIRECTLY WITH SILICON

STS 4: A SPINTRONIC MEMRISTOR

STS 5: MEMRISTIVE MAGNETIC TUNNEL JUNCTIONS AND THEIR APPLICATIONS

STS 6: ANTIFERROMAGNETIC COUPLING ACROSS SILICON REGULATED BY TUNNELING CURRENTS

STS 7: NON-VOLATILE ELECTRICAL CONTROL OF MAGNETISM IN MANGANESE-DOPED ZINC OXIDE

MFH 1: MAGNETOELECTRICALLY INDUCED GIANT TUNNELING ELECTRORESISTANCE EFFECT

MFH 2: REVERSIBLE ELECTRICAL SWITCHING OF SPIN POLARIZATION IN MULTIFERROIC Co/Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 TUNNEL JUNCTIONS

MFH 3: MAGNETOELASTIC AND MAGNETOELECTRIC EFFECTS IN COMPOSITE MULTIFERROIC HYBRID STRUCTURES

MFH 4: ELECTRIC CONTROL OF THE MAGNETIZATION IN BiFeO3/LaFeO3 SUPERLATTICES.

MFH 5: THE NEXT STEP ON THE SPIRAL – TbMnO3 THIN FILMS

MFH 6: MAGNETIC CHIRAL DOMAINS IN MULTIFERROIC THIN FILMS KEEP MEMORY

MFH 7: EXCHANGE BIAS AND MAGNETOELECTRIC COUPLING EFFECTS IN ZnFe2O4 – BaTiO3 COMPOSITE THIN FILMS

MFO 1: CHARGE ORDER IN LUTETIUM IRON OXIDE: AN UNLIKELY ROUTE TO FERROELECTRICITY

MFO 2: CRYSTAL STRUCTURE, PHASE TRANSITION, CHEMICAL EXPANSION AND DEFECT CHEMISTRY OF HEXAGONAL HoMnO3

MFO 3: COLLECTIVE MAGNETISM AT FERROELECTRIC DOMAIN WALLS

MFO 4: HARD X-RAY NANOSCALE STRUCTURAL IMAGING OF MULTIFERROIC THIN FILMS

MFO 5: THE STRUCTURE OF THE MULTIFERROIC BaTiO3/Fe(001) INTERFACE

MFO 6: INVESTIGATION OF TWO MECHANISMS FOR MULTIFERROICITY IN PbCrO3 BY DFT

MFT 1: REALIZATION OF FULL MAGNETOELECTRIC CONTROL AT ROOM TEMPERATURE

MFT 2: SPIN WAVES AND LATTICE ANOMALY OF BiFeO3 MEASURED BY NEUTRON SCATTERING

MFT 3: TUNING THE MULTIFERROIC PHASE OF CuO WITH IMPURITIES

MFT 4: MULTIFERROICITY AND MAGNETOELECTRICITY IN A DOPED TOPOLOGICAL FERROELECTRIC

MFT 5: SEARCH FOR NEW STRAIN-INDUCED MULTIFERROICS WITH HIGH CRITICAL TEMPERATURES

QUB 1: Quantum Electronic Materials

QUB 2: IDENTIFYING CAPACITIVE AND INDUCTIVE LOSS IN LUMPED ELEMENT SUPERCONDUCTING RESONATORS

QUB 3: SUPERCONDUCTIVITY IN QUASI-1D LaAlO3/SrTiO3 NANOSTRUCTURES

QUB 4: ON-DEMAND SINGLE ELECTRON TRANSFER BETWEEN DISTANT QUANTUM DOTS — ELECTRON “PING-PONG” IN A SINGLE ELECTRON CIRCUIT

QUB 5: ULTRAFAST ENTANGLING GATES BETWEEN NUCLEAR SPINS USING PHOTO-EXCITED TRIPLET STATES

QUB 6: NOISE SPECTROSCOPY USING CORRELATIONS OF SINGLE-SHOT QUBIT READOUT

SUP 1: INVESTIGATING THE IRON BASED SUPERCONDUCTOR (FeSe0.4Te0.6) WITH SPECTROCOPIC-IMAGING SCANNING TUNNELING MICROSCOPE

SUP 2: NANOSCALE LAYERING OF ANTIFERROMAGNETIC AND SUPERCONDUCTING PHASES IN Rb2Fe4Se5

SUP 3: RESONANCE MODE IN RARE-EARTH SYSTEMS WITH VALENCE INSTABILITY

SUP 4: MULTI-BAND EFFECTS ON SUPERCONDUCTING INSTABILITIES DRIVEN BY ELECTRON-ELECTRON INTERACTIONS

SUP 5: FIELD-INDUCED SUPERCONDUCTIVITY IN A LAYERED TRANSITION METAL DICHALCOGENIDE

SUP 6: TOWARDS IDEAL HIGH-Tc JOSEPHSON JUNCTIONS

SUP 7: TUNED EPITAXY OF OXIDE HETEROSTRUCTURES

ISE 1: STRAIN EFFECTS ON THE ELECTRONIC SUBBAND STRUCTURE OF SrTiO3

ISE 2: ELECTRON OCCUPANCY OF 3D-ORBITALS IN MANGANITE THIN FILMS

ISE 3: SUBSTRATE COHERENCY DRIVEN PHASE SEPERATION AND INTRINSIC ANISOTROPY IN EPITAXIAL La0.67Ca0.33MnO3/NdGaO3(001) EPITAXIAL FILMS

ISE 4: THICKNESS DEPENDENCE OF LATTICE DISTORTIONS IN EPITAXIAL FRAMEWORK STRUCTURES OF STRONGLY CORRELATED OXIDES: La2/3Sr1/3MnO3/SrTiO3

ISE 5: ORBITAL ENGINEERING BY STRAIN IN THIN FILMS OF La1-xSr1+xMnO4 GROWN BY PULSED LASER DEPOSITION

ISE 6: STRUCTURE AND TRANSPORT PROPERTIES OF SmNiO3 THIN FILMS

ISE 7: METAL-INSULATOR TRANSITION AND INTERFACE PHENOMENA IN NICKELATE HETEROSTRUCTURES

PPO 1: PHOTOVOLTAIC ENERGY CONVERSION BASED ON STRONGLY CORRELATED OXIDES

PPO 2: TERAHERTZ AND INFRARED BEHAVIOR OF STRAINED Srn+1TinO3n+1 THIN FILMS WITH RUDDLESDEN-POPPER STRUCTURE

PPO 3: FERROELECTRIC ENHANCED CHARGE GENERATION IN SOLAR ENERGY HARVESTING

PPO 4: A FACILE PREPARATION AND EXTREMILY FAST PHOTOCATALYTIC PROPERTIES OF OXIDE SEMICONDUCTOR/FERROELECTRIC NANO HETEROSTRUCTURE

PPO 5: LIGHT CONTROLLED AMORPHOUS-Al2O3 MEMRISTIVE DEVICES

FIN 1: FERROELECTRIC SWITCHING DYNAMICS AT THE NANOSCALE WITH HIGH SPEED SPM

FIN 2: IONIC CHARGE INTERACTIONS WITH FERROELECTRIC SURFACES: POLARIZATION OF ULTRATHIN PbTiO3 WITH CONTROLLED SURFACE COMPENSATION

FIN 3: STRAIN TUNNING OF FERROELECTRIC-ANTIFERRODISTORTIVE COUPLING IN PbTiO3/SrTiO3 SUPERLATTICES

FIN 4: INTERFACE CONTROL OF BULK FERROELECTRIC POLARIZATION

FIN 5: ANALYZING POLARIZATION AND LATTICE STRAINS AT THE INTERFACE OF FERROELECTRIC HETEROSTRUCTURES ON ATOMIC SCAL VIA CS-CORRECTED SCANNING TRANSMISSION ELECTRON M IXROSCOPY (STEM)

FIN 6: CONTROL OF CONDUCTION THROUGH DOMAINS AND DOMAIN WALLS IN BiFeO3 THIN FILMS

FER 1: CMOS COMPATIBLE FERROELECTRIC MATERIALS BASED ON HAFNIUM OXIDE

FER 2: ATOMIC LAYER DEPOSITED Gd-DOPED HfO2 THIN FILMS: FROM HIGH-K DIELECTRICS TO FERROELECTRICS

FER 3: TEMPERATURE-DEPENDENT ELECTRICAL CHARACTERIZATION OF HAFNIUM OXIDE BASED FERROELECTRIC ULTRA-THIN FILMS

FER 4: CORRELATION BETWEEN COMPOSITION AND ELASTIC PROPERTIES OF CaxBa1-xNb2O6 RELAXOR FERROELECTRICS

FER 5: LONE PAIR-INDUCED COVALENCY AS THE CAUSE OF TEMPERATURE AND FIELD-INDUCED INSTABILITIES IN BISMUTH SODIUM TITANATE

FER 6: INTERACTION OF POINT DEFECTS AND FERROELECTRIC POLARIZATION IN A LEAD-FREE PIEZOELECTRIC MATERIAL

ALD 1: ATOMIC LAYER DEPOSITION FOR MICROELECTRONIC DEVICES

ALD 2: ATOMIC LAYER DEPOSITION OF SrTiO3 FILMS WITH Cp-BASED PRECURSORS FOR DRAM CAPACITORS

ALD 3: DEPOSITION OF INNOVATIVE MATERIALS BY GAS PHASE TECHNOLOGIES FOR THE SEMICONDUCTOR INDUSTRY

ALD 4: ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDE THIN FILMS FOR RESISTIVE MEMORY APPLICATIONS

ALD 5: ALD PROCESS CONTROL FOR TAILORING THE NANOSTRUCTURE OF TiO2 FILMS FOR RESISTIVE SWITCHING APPLICATIONS

ALD 6: INVESTIGATION OF ATOMIC LAYER DEPOSITION PROPERTIES OF (GeTe2)1-x(Sb2Te3)x PSEUDO-BINARY COMPOUND FOR PHASE CHANGE MEMORY APPLICATION

NAN 1: DIRECT PATTERNING OF OXIDE INTERFACE WITH HIGH MOBILITY 2DEG WITHOUT PHYSICAL ETCHING

NAN 2: EUV INTERFERENCE LITHOGRAPHY WITH LABORATORY SOURCES

NAN 3: HIGH EFFICIENCY TRANSMISSION MASKS FOR EUV INTERFERENCE LITHOGRAPHY

NAN 4: SELF-PATTERNED ABO3(001) SUBSTRATES: A PLAYGROUND FOR FUNCTIONAL NANOSTRUCTURES

NAN 5: ANOMALOUS GAS SENSING CHARACTERISTICS OF EMBEDDED AND ISOLATED MAGNESIUM ZINC FERRITE NANO-TUBES

NAN 6: ORDERED MESOPOROUS METAL OXIDES BY STRUCUTRE REPLICATION: STRUCTURE-PROPERTY-RELATIONSHIPS AND APPLICATION IN GAS SENSING

NAN 7: WIDTH CONTROL AND OPTICAL NONLINEARITY OF PLATINUM NANOWIRES

LTB 1: NON-LINEAR PROPERTIES OF BALLISTIC ELECTRON FOCUSING DEVICES

LTB 2: HALL EFFECT IN AN ASYMMETRIC BALLISTIC CROSS JUNCTION

LTB 3: ELIMINATION OF HOT-ELECTRON THERMOPOWER FROM BALLISTIC RECTIFICATION USING A DUAL-CROSS DEVICE

LTB 4: STRUCTURAL INFLUENCES ON ELECTRONIC TRANSPORT IN NANOSTRUCTURES

LTB 5: TUNNEL-INDUCED SPIN-ANISOTROPY IN QUANTUM DOT SPIN VALVES

LTB 6: CHARGING EFFECTS AND ELECTRON TRANSPORT PHENOMENA ASSOCIATED WITH THE REDOX PROPERTIES OF SELF-ASSEMBLED POLYOXOMETALATE MOLECULES

MOL 1: MOLECULAR ELECTRONICS MEETS SPINTRONICS: AN AB INITIO EXPLORATION

MOL 2: CHARGE TRAPPING AND ELECTROFORMING IN METAL OXIDE/POLYMER RESISITVE SWITCHING MEMORY DIODES

MOL 3: ELECTROFORMING IN LIF/POLYMER RESISITVE SWITCHING MEMORY DIODES AND HOLE INJECTION

MOL 4: EFFECT OF HETEROMETALLIC CONTACTS ON CHARGE TRANsPORT

MOL 5: SEMI-EMPIRICAL VS. AB-INITIO CORRELATION EFFECTS: DFT STUDY OF THIOPHENE ADSORBED ON THE Cu(111) SURFACE

MOL 6: INTERFACE DIPOLE FORMATION IN DITIOCARBAMATE BASED SURFACE FUNCTIONALIZATIONS

CMS 1: HYBRIDIZATION OF PARALLEL CARBON NANOTUBE QUANTUM DOTS

CMS 2: LOW-TEMPERATURE SCANNING PROBE MICROSCOPY EXPERIMENTS ON ATOMICALLY WELL-DEFINED GRAPHENE NANORIBBONS

CMS 3: CORRELATIONS BETWEEN SWITCHING OF CONDUCTIVITY AND OPTICAL RADIATION OBSERVED IN THIN CARBON FILMS

CMS 4: FIRST-PRINCIPLES AND SEMI-EMPIRICAL VAN DER WAALS STUDY OF π-CONJUGATED MOLECULES PHYSISORBED ON GRAPHENE AND A BORON NITRIDE LAYER

CMS 5: FINITE-TEMPERATURE EXACT DIAGONALIZATION STUDY OF THE HUBBARD MOLECULES IN HETEROSTRUCTURES

CMS 6: DFT+CI CALCULATIONS OF QUANTUM DOTS IN GRAPHENE NANORIBBONS

Poster Sessions

ELT 1: FUNDAMENTAL PROPERTIES OF THE SUPERCONDUCTING STATE AT THE LaAlO3/SrTiO3 INTERFACE

ELT 2: TORQUE MAGNETOMETRY ON LaAlO3-SrTiO3 HETEROSTRUCTURES

ELT 3: BUILDING UP A STRATEGY TO CONTROL LATTICE THERMAL CONDUCTIVITY IN LAYERED COBALT OXIDES

ELT 4: THE EFFECT OF AMMONOLYSIS ON THE STRUCTURE AND THERMOELECTRIC PROPERTIES OF EuTiO3 AND EuTi0.98Nb0.02O3

ELT 5: ELECTRICAL TRANSPORT INVESTIGATIONS ON NANOPARTICLE TEST STRUCTURES

ELT 6: FIRST-PRINCIPLES CALCULATION OF MAGNETISM OF SUBSTITUTIONAL TRANSITION IMPURITIES IN BINARY IRON-SELENIUM SYSTEM

ELT 7: FIRST-PRINCIPLES CALCULATIONS OF PHONON-PHONON INTERACTION IN ROCK SALT TYPE CRYSTALS

ELT 8: MICROSTRUCTURAL CHARACTERIZATION OF VARISTOR CERAMICS AFTER ACCELERATED AGEING WITH DC VOLTAGE.

ELT 9: FIRST-PRINCIPLES ELECTRONIC STRUCTURE OF β-FeSi2 AND FeS2 SURFACES

ELT 10: ACCURATE BAND GAPS OF TRANSPARENT CONDUCTING OXIDES WITH A SEMILOCAL EXCHANGE-CORRELATION POTENTIAL

ELT 11: OCTAHEDRAL-TILTING-DEPENDENT STRUCTURE DISTORTION IN EPITAXIAL PEROVSKITE OXIDE FILMS

ELT 12: THE γ→α CHANGE IN CERIUM IS HIDDEN STRUCTURAL PHASE TRANSITION: THEORY AND EXPERIMENT

ELT 13: HETEROSTRUCTURES BASED ON EPITAXIAL OXIDE THIN FILMS

ELT 14: INCOHERENT INTERFACES AND LOCAL LATTICE STRAINS IN SOLUTION-DERIVED YBCO NANOCOMPOSITES: A NOVEL VORTEX PINNING MECHANISM

ELT 15: DENSITY INFLUENCE ON AMORPHOUS HfO2 STRUCTURE: A MOLECULAR DYNAMICS STUDY

ELT 16: ELECTRIC FIELD TUNING OF THE QUASIPARTICLE WEIGHT IN THIN FILMS MADE OF STRONGLY CORRELATED MATERIALS

ELT 17: METALLIC STATE INDUCED BY SPIN-CANTING IN LIGHTLY ELECTRON-DOPED CaMnO3

ELT 18: PRESSURE-INDUCED STRUCTURAL CHANGES AT THE CROSSOVER FROM LOCALIZED TO ITINERANT BEHAVIOUR IN PrNiO3

ELT 19: MECHANICS MEETS ELECTRONICS IN NANOSCALE: THE MYSTERY OF CURRENT SPIKE AND NANOSCALE-CONFINEMENT

ELT 20: EFFECT OF THE CAPPING ON THE MANGANESE OXIDATION STATE IN SrTiO3/La2/3Ca1/3MnO3 INTERFACES AS A FUNCTION OF ORIENTATION

ELT 21: ON THE ELECTRICAL BEHAVIOR OF PLANAR TUNGSTEN POLYOXOMETALATE SELF-ASSEMBLED MONO- AND BI-LAYER JUNCTIONS

ELT 22: MECHANICS MEETS ELECTRONICS IN NANOSCALE: NANOSCALE DECONFINEMENT OF SILICON ALTERS ITS PROPERTIES

ELT 23: BREATHING-LIKE MODES IN AN INDIVIDUAL MULTIWALLED CARBON NANOTUBE

ELT 24: EFFECT OF DIFFERENT ACID TREATMENT OF CARBON NANOTUBES (CNT) ON CNT/TiO2 NANOCOMPOSITES VIA SOL-GEL METHOD

ELT 25: INTERPLAY OF ELECTRONIC CORRELATIONS AND SPIN-ORBIT INTERACTIONS AT THE ENDS OF CARBON NANOTUBES

ELT 26: GRAPHENE CHARGE DETECTOR ON A CARBON NANOTUBE QUANTUM DOT

ELT 27: RESISTIVE SWITCHING ON METAL-OXIDE POLYMER MEMORIES

ELT 28: THIOLATED (OLIGO)PHENOTHIAZINES AS PROMISING CANDIDATES FOR FUTURE STORAGE ELEMENTS

ELT 29: SPM-INVESTIGATIONS OF THE SPIROPYRAN – MEROCYANIN PHOTOISOMERIZATION

ELT 30: MEMRISTIVE PHENOMENA OF CONDUCTION POLYMER PEDOT:PSS

ELT 31: A NEW MINIMUM SEARCH METHOD FOR COMPLEX OPTIMIZATION PROBLEMS

MEM 1: RESISTIVE SWITCHING CHARACTERISTICS IN HfO2 THIN FILMS DEPENDING ON THEIR CRYSTALLINE STRUCTURE

MEM 2: DEPOSITION OF CHALCOGENIDE THIN LAYERS BY MAGNETRON SPUTTERING FOR RRAM APPLICATIONS

MEM 3: DETERMINISTIC RESISTIVE SWITCHING CONTROL IN HfO2-BASED MEMORY DEVICES

MEM 4: INVESTIGATION OF TRANSIENT CURRENTS DURING ULTRA-FAST DATA OPERATION OF TiO2 BASED RRAM

MEM 5: FAST PULSE FORMING PROCESS FOR TiO2 BASED RRAM NANO-CROSSBAR DEVICES

MEM 6: CURRENT TRANSPORT MODELING IN OXIDE-BASED RESISTIVELY SWITCHING MEMORY CELLS FOR THE INVESTIGATION OF ELECTROFORMATION

MEM 7: MODELING OF SWITCHING DYNAMICS FOR TiO2-x MEMRISTIVE DEVICES

MEM 8: MULTISTATE MEMORY DEVICES BASED ON FREE-STANDING VO2/TiO2 MICROSTRUCTURES DRIVEN BY JOULE SELF-HEATING

MEM 9: TANTALUM OXIDE BASED MEMRISTIVE DEVICES AB INITIO ELECTRONIC STRUCTURE CALCULATIONS FOR STABILITY, DEFECTS AND DIFFUSION BARRIERS

MEM 10: CONCURRENT RESISTIVE AND CAPACITIVE STATE SWITCHING OF NANOSCALE TiO2 MEMRISTORS

MEM 11: THE MEMORY-CONSERVATION MODEL OF MEMRISTANCE

MEM 12: ANALOG AND DIGITAL COMPUTING WITH MEMRISTIVE DEVICES

MEM 13: EFFECT OF VACANCIES ON THE PHASE CHANGE CHARACTERISTICS OF GeSbTe ALLOYS

MEM 14: ULTRA LOW POWER CONSUMING, THERMALLY STABLE SULPHIDE MATERIALS FOR RESISTIVE AND PHASE CHANGE MEMRISTIVE APPLICATION

MEM 15: THERMAL CONDUCTIVITY MEASUREMENTS OF Sb-Te ALLOYS BY HOT STRIP METHOD

MEM 16: juRS – MASSIVELY PARALLEL REAL-SPACE DFT

MEM 17: FIRST-PRINCIPLES STUDY OF PHASE-CHANGE MATERIALS DOPED WITH MAGNETIC IMPURITIES

MEM 18: NUCLEAR RESONANCE SCATTERING IN PHASE-CHANGE MATERIALS

MEM 19: DEFECT STATES IN AMORPHOUS PHASE-CHANGE MATERIALS

MEM 20: ELECTRIC FIELD INDUCED LOCAL SURFACE POTENTIAL MODIFICATION AND TRANSPORT BEHAVIORS OF TiO2 SINGLE CRYSTALS

MEM 21: RESISTIVE SWITCHING IN DIFFERENT FORMING STATES OF Ti/Pr0.48Ca0.52MnO3 JUNCTIONS

MEM 22: FIRST PRINCIPLES SIMULATIONS OF OXYGEN DIFFUSION IN RRAM MATERIALS

MEM 23: OBSERVATION OF A CONDUCTIVE REGION IN THE TiN/HfO2 SYSTEM AFTER RESISTANCE SWITCHING

MEM 24: TRANSIENT CHARACTERISTICS DURING SET OPERATION OF A Ta2O5 SOLID ELECTROLYTE MEMRISTIVE SWITCH

MEM 25: REMANENT RESISTANCE CHANGES IN METAL- MANGANITE-METAL SANDWICH STRUCTURES

MEM 26: THEORETICAL STUDY ON THE CONDUCTIVE PATH IN TANTALUM OXIDE ATOMIC SWITCH

MEM 27: CHARACTERISTIC OF LOW TEMPERATURE FABRICATED NONVOLATILE MEMORY DEVICES OF ZN AND SN NANO THIN FILM EMBEDDED MIS

MEM 28: ELECTROCHEMICAL STUDIES ON Al2O3 THIN FILMS FOR RESISTIVE MEMORY APPLICATIONS

MEM 29: RESISTIVE SWITCHING PHENOMENA IN Ag-GeSx MEMORY CELLS

MEM 30: STATES AND PROCESSES IN NANO-SCALED CATION BASED RRAM CELLS

MEM 31: FIGHTING VARIATIONS IN PT/TIO2-X/PT AND AG/A-SI/PT MEMRISTIVE DEVICES

MEM 32: A STUDY UPON THE SWITCHING CHARACTERISTICS AT RUPTURED CONDUCTING FILAMENTS REGION IN A Pt/TiO2/Pt MEMRISTIVE DEVICE

MEM 33: STUDY ON RESISTIVE SWITCHING OF BINARY OXIDE THIN FILMS USING SEMICONDUCTING In2Ga2ZnO7 ELECTRODE

MEM 34: BIPOLAR RESISTIVE SWITCHING BEHAVIORS OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITED NiO FILMS ON TUNGSTEN SUBSTRATE

MEM 35: NONVOLATILE RESISTIVE SWITCHING IN Au/BiFeO3 RECTIFYING JUNCTION

MEM 36: DIFFERENT BEHAVIOUR SEEN IN FLEXIBLE TITANIUM DIOXIDE SOL-GEL MEMRISTORS DEPENDENT ON THE CHOICE OF ELECTRODE MATERIAL

MEM 37: MEMRISTIVE COGNITIVE COMPUTING

MEM 38: SYNAPTIC PLASTICITY OF ELECTROCHEMICAL CAPACITORS BASED ON TiO2

MEM 39: SIMULATION OF ASYMMETRIC RESISTIVE SWITCHING IN ELECTROCHEMICAL METALLIZATION MEMORY CELLS

MEM 40: A V2O5-BASED RESISTANCE RANDOM ACCESS MEMORY AND IMPROVEMENT OF SWITCHING CHARACTERISTICS BY EMBEDDING A THIN VO2 INTERFACE LAYER

MEM 41: METAL-INSULATOR TRANSITION OF ALD VO2 THIN FILMS FOR PHASE TRANSITION SWITCHING

MEM 42: SWITCHING AND LEARNING IN Ni-DOPED GRAPHENE OXIDE THIN FILMS

SRP 1: CHARGE CARRIER-MEDIATED FERROMAGNETISM IN FeSb2-xSnxSe4

SRP 2: CHARACTERIZATION OF THE ATOMIC INTERFACE IN HIGH-QUALITY Fe3O4/ZnO HETEROSTRUCTURES

SRP 3: ULTRATHIN Fe OXIDES FILMS: STRUCTURAL, ELECTRONIC AND MAGNETIC PROPERTIES UNDER REDUCED DIMENSIONS

SRP 4: STRUCTURAL DEPENDENCE OF MAGNETIC PROPERTIES IN TWO DIMENSIONAL NICKEL NANOSTRIPS: MAGNETIC ANOMALY AND MAGNETIC TRANSITION IN NANOSTRIPS

SRP 5: SPIN BLOCKADE AND MAGNETIC EXCHANGE IN THE LAYERED COBALTATES

SRP 6: EXPERIMENTAL VERIFICATION OF CHIRAL MAGNETIC ORDERS: CHIRAL MAGNETIC SOLITON LATTICE IN CHIRAL HELIMAGNET

SRP 7: FREQUENCY DEPENDENT MAGANOTRANSPORT IN Sm0.6Sr0.4MnO3: USNUAL POSITIVE AND NEGATIVE MAGNETORESISTANCE

SRP 8: FIELD INDUCED SPIN-REORIENTATION AND STRONG SPIN-CHARGE-LATTICE COUPLING IN EuFe2As2

SRP 9: ANISOTROPY OF SPIN RELAXATION IN hcp OSMIUM AND bcc TUNGSTEN

SRP 10: SPIN-WAVE DYNAMICS IN TETRAGONAL FeCo ALLOYS

SRP 11: ROLE OF INTERFACES IN MANGANITE PHYSICS

SRP 12: ISOTHERMAL ELECTRIC CONTROL OF EXCHANGE BIAS NEAR ROOM TEMPERATURE

SRP 13: STRAIN ENGINEERING OF MULTIFERROIC PHASE TRANSITIONS AND ORDER PARAMETERS IN BiFeO3

SRP 14: OBSERVATION AND EFFECT OF MAGNETIC DOMAINS IN LATERAL SPIN VALVES

SRP 15: THICKNESS EVOLUTION OF THE STRAIN IN PCMO THIN FILMS

SRP 16: EFFECT OF MIXED ORTHORHOMBIC/HEXAGONAL STRUCTURE ON MAGNETIC ORDERING IN STRONTIUM DOPED YTTERBIUM MANGANITES

SRP 17: QUANTUM TRANSPORT THROUGH TOPOLOGICAL SPIN TEXTURE IN CHIRAL HELIMAGNET

SRP 18: COMPARATIVE INVESTIGATION OF Sb2Te3 NANOSTRUCTURE PROPERTIES WITH RESPECT TO THEIR PRODUCTION METHOD

SRP 19: TOPOLOGICAL INSULATORS FROM THE VIEW POINT OF CHEMISTRY

SRP 20: PROBING TWO TOPOLOGICAL SURFACE BANDS OF ANTIMONY-TELLURIDE BY SPIN-POLARIZED PHOTOEMISSION SPECTROSCOPY

SRP 21: QUASIPARTICLE CORRECTIONS AND SURFACE STATES OF TOPOLOGICAL INSULATORS Bi2Se3, Bi2Te3 AND Sb2Te3.

SRP 22: ELECTRIC FIELD INDUCED SWITCHING OF MAGNETIZATION IN CoPt3/BaTiO3 HETEROSTRUCTURES

SRP 23: EVIDENCE OF PARAELECTROMAGNON-LIKE EXCITATIONS IN THz SPECTRA OF HEXAGONAL YMnO3 SINGLE CRYSTAL

SRP 24: ELECTRICAL BEHAVIOR OF Bi0.95Nd0.05FeO3 THIN FILMS GROWN BY THE SOFT CHEMICAL METHOD.

SRP 25: THEORETICAL INVESTIGATION OF THE MAGNETOELECTRIC PROPERTIES OF MnPS3

SRP 26: HIGH TEMPERATURE MULTIFERROIC COMPOUNDS: FROM BiFeO3 TO Bi2FeCrO6

SRP 27: HAADF STEM TOMOGRAPHY OF FERRIMAGNETIC FexCo(3-x)O4 NANOSTRUCTURES EMBEDDED IN HIGHLY ORDERED ANTIFERROMAGNETIC Co3O4 MESOPOROUS TEMPLATES.

SRP 28: NON-COLLINEAR MAGNETISM IN 3d-5d ZIGZAG CHAINS: TIGHT BINDING MODEL AND AB-INITIO CALCULATIONS

POL 1: DIRECT OBSERVATION OF TRANSIENT NEGATIVE CAPACITANCE IN DOMAIN WALL OF FERROELECTRIC THIN FILMS

POL 2: STRONTIUM TITANATE ULTRA-THIN FILM CAPACITORS ON SILICON SUBSTRATES FOR APPLICATION IN DYNAMIC RANDOM ACCESS MEMORY (DRAM)

POL 3: ENHANCEMENT OF FERROELECTRIC POLARIZATION BY INTERFACE ENGINEERING

POL 4: INFLUENCE OF ADDITIVES WITH LOW MELTING TEMPERATURES ON STRUCTURE, MICROSTRUCTURE, PHASE TRANSITIONS, DIELECTRIC AND PIEZOELECTRIC PROPERTIES OF BiScO3 – PbTiO3 CERAMICS

POL 5: CONTROL OF β- AND γ-PHASE FORMATION IN ELECTROACTIVE P(VDF-HFP) FILMS BY SILVER NANO-PARTICLE DOPING

POL 6: SYNTHESIS AND CHARACTERIZATION OF NANOSTRUCTURED MATERIALS FOR REMOVAL OF EXHAUST GASES

POL 7: GROWTH AND CHARACTERIZATION OF MAGNETO-OPTICAL CERIUM-DOPED YTTRIUM IRON GARNET FILMS ON SILICON NITRIDE FOR NONRECIPROCAL PHOTONIC DEVICE APPLICATIONS

POL 8: PHOTELECTROCHEMICAL WATER SPLITTING BY CHEMICAL SOLUTION DEPOSITED NANOSTRUCTURE AND COMPOSITION ENGINEERED HEMATITE FILMS

POL 9: A CHEMICAL APPROACH TO THE ESTIMATE OF THE OPTICAL BAND GAP AND BOWING PARAMETER IN MIXED d,d-METAL OXIDES

POL 10: BAND ALIGNMENT ENGINEERING WITH LIQUID DIELECTRICS

POL 11: THE BEHAVIOUR OF OXYGEN VACANCIES IN THE PEROVSKITE OXIDE STRONTIUM TITANATE AND AT ITS EXTENDED DEFECTS

POL 12: DOPED CERIA: A DFT AND MONTE CARLO STUDY

POL 13: OXYGEN VACANCY FORMATION ON (110) TiO2 SURFACE - A FIRST PRINCIPLES STUDY

POL 14: FINITE SIZE EFFECT OF PROTON CONDUCTIVITY OF AMORPHOUS OXIDE THIN FILM AND ITS APPLICATION YO HYDROGEN-PERMEABLE MEMBRANE FUEL CELL

POL 15: GRAIN BOUNDARIES IN PROTON-CONDUCTING BaZrO3 PEROVSKITES

POL 16: FAST ELECTROMIGRATION OF OXYGEN VACANCIES IN IMPLANTED RUTILE (TiO2)

POL 17: TAILOR-MADE COMPLEX OXIDE THIN FILMS AS PROTON CONDUCTING ELECTROLYTES FOR LOW TEMPERATURE OPERATING SOLID OXIDE FUEL CELLS

POL 18: EFFECT OF THE SUBSTITUTION OF OXYGEN BY NITROGEN ON THE CRYSTAL CHEMISTRY OF La-DOPED BaTiO3

POL 19: METALLIC ELECTROLYTE COMPOSITES IN THE FRAMEWORK OF THE BRICKLAYER MODEL

ATC 1: DETECTION OF FILAMENT FORMATION IN FORMING-FREE RESISTIVELY SWITCHING SrTiO3 DEVICES WITH Ti TOP ELECTRODES

ATC 2: FREE-ELECTRON FINAL-STATE CALCULATIONS FOR THE INTERPRETATION OF HARD X-RAY ANGLE-RESOLVED PHOTOEMISSION

ATC 3: GROWTH PRESSURE CONTROL OF ELECTRONIC INTERFACE PROPERTIES IN LAO/STO HETEROSTRUCTURES: NEW INSIGHT FROM HIGH-ENERGY SPECTROSCOPY

ATC 4: ANISOTROPIC MAGNETOELASTIC COUPLING IN FERROPNICTIDES

ATC 5: DEPTH-RESOLVED ARPES OF BURIED LAYERS AND INTERFACES VIA SOFT X-RAY STANDING-WAVE EXCITATION

ATC 6: STRUCTURING COMPLEX OXIDE HETEROSYSTEMS VIA E-BEAM LITHOGRAPHY

ATC 7: LASER HEATING OF OXIDE SUBSTRATES: CHALLENGES AND SOLUTIONS

ATC 8: WET CHEMICAL ETCHING OF STRONTIUM RUTHENIUM OXIDE THIN FILMS BY OXIDATION

ATC 9: EFFECT OF ALD PROCESSING AND TOP ELECTRODES ON ZrO2 THIN FILMS STRUCTURAL AND RESISTIVE SWITCHING CHARACTERISTICS

ATC 10: RESISTIVE SWITCHING STUDY ON Nb2O5 THIN FILMS OF DIFFERENT THICKNESS AND MORPHOLOGY GROWN BY PVD AND ALD

ATC 11: CALCULATION OF LORENZ TRANSITION ELECTRON MICROSCOPY DIFFRACTION MAP FOR A CHIRAL MAGNETIC SOLITON LATTICE

ATC 12: CHARGE DENSITY WAVE STUDY IN Dy5Ir4Si10

ATC 13: PREPARING INAS NANOWIRES FOR FUNCTIONALIZED STM TIPS

ATC 14: FROM THE MICROSCALE TO THE NANOSCALE: EDX ANALYSIS WITH HIGH SPATIAL RESOLUTION USING SILICON DRIFT DETECTORS (SDD)

ATC 15: NANOPULSED FIELD INDUCED CONTROL OF HYBRID MATERIALS AND ITS FUNCTIONARYTY

ATC 16: EUV actinic mask blank defect inspection: results and status of concept realization

ATC 17: INVESTIGATIONS OF METALL-FILMS ABSORPTION ON COBALT WITH NVIDIA CUDA TECHNOLOGY

ATC 18: AN OXIDE MBE SYSTEM FOR QUASI IN-SITU NEUTRON REFLECTOMETRY STUDIES

ATC 19: EXPLORING THE RESOLUTION LIMIT OF THE TALBOT LITHOGRAPHY WITH EUV LIGHT

ATC 20: NON-STOICHIOMETRIC HfO2-x THIN FILMS

The Editors

Prof. Dr.-Ing. Rainer WaserRWTH AachenInstitut für Elektrotechnik IISommerfeldstr. 2452074 AachenGermany

Dr. Jörg HeberNature MaterialsThe Macmillan Building4, Crinan StreetLondon N1 9XWUnited Kingdom

Prof. Darrell SchlomCornell UniversityMaterials Science & Engineering230, Bard HallIthaca, NY 14853-2201USA

Prof. Dr. Yoshinori TokuraUniversity of TokioDept. of Applied Physics7-3-1 Hongo, Bunkyo-kuTokyo 113-8656Japan

Prof. Dr. Matthias WuttigRWTH AachenI., Physikalisches InstitutSommerfeldstr. 1452056 AachenGermany

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Print ISBN    978-3-527-41191-7

Invited Talks

INV 1NEW MAGNETIC MATERIALS BASED ON DEFECTS, INTERFACES AND DOPING

George A. Sawatzky, Ilya Elfimov, Bayo Lau and Mona Berciu

Physics dept and Max Planck-UBC Centre for Quantum MaterialsUniversity of British Columbia Vancouver Canada

Ideas based on theory and some experiments will be presented regarding possible new magnetic materials based on extended and point defects (1), interface engineering (2), anion substitution in oxides and hole and electron doping of oxides. The concentration will be on rather ionic oxides mostly not involving conventional magnetic elements. Special attention will also be placed on surface and interface effects involving polar surfaces as well as on the role of doped holes in O 2p in charge transfer gap oxides. O 2p holes play an extremely important role in the magnetism and superconductivity of oxides and new results will be presented regarding the ferromagnetic exchange coupling they introduce in transition metal oxides(3) and the interplay between transport properties, magnetic order and the general phase diagrams of materials involving O 2p holes either in the so called self doped case of stochiometric oxides or in chemically substituted systems and cation or anion vacancies. We also present exact results on the spin polaron formation(4) and charge propagation of doped Fermions in Ferromagnetic lattices and the pairing interaction due to the magnetic background.

1. I. S. Elfimov, S. Yunoki, and G. A. Sawatzky PRL 89, 216403, (2002)

2. N. Pavlenko, T. Kopp, E.Y. Tsymbal, G.A. Sawatzky, and J. Mannhart PRB 85, 020407, (2011)

3. Bayo Lau, Mona Berciu and George A. Sawatzky, PRL 106, 036401 (2011)

4. Berciu and G. A. Sawatzky, PRB 79, 195116 (2009)

INV 2ATOMIC-RESOLUTION ELECTRON SPECTROSCOPY OF INTERFACES AND DEFECTS IN COMPLEX OXIDES

D. A. Muller1, J. A. Mundy1, L. Fitting Kourkoutis1, M. P. Warusawithana2, J. Ludwig2, P. Roy2,A. A. Pawlicki2, T. Heeg3, C. Richter4, S. Paetel4, M. Zheng5, B. Mulcahy5, W. Zander6,J. N. Eckstein5, J. Schubert6, J. Mannhart4, D. G. Schlom3

1 School of Applied and Engineering Physics, Cornell University,2Department of Physics and NHMFL, Florida State University,3Department of Materials Science and Engineering, Cornell University,4Experimentalphysik VI, University of Augsburg,5Department of Physics, University of Illinois at Urbana – Champaign,6Inst. of Bio and Nanosystems IBN1-IT and JARA-FIT, Research Centre Jülich

Electron energy loss spectroscopy (EELS) in a new generation of aberration-corrected electron microscopes provides direct images of the local physical and electronic structure of a material at the atomic scale [1]. The sensitivity and resolution can extend to imaging single dopant atoms or vacancies in their native environments. The detection and control of interface defects using EELS, closely-coupled with atomically-precise growth methods, has enabled the realization of interface-stabilized emergent ground states, including a 2D metal at the LaTiO3/SrTiO3 interface; a 2D superconductor between a LaAlO3 and SrTiO3; and, by eliminating extended 2D defects, ferromagnetic manganites a few unit cells thick - well below the widely-assumed critical thickness for ferromagnetism and conductivity in manganite systems. In each case, the detection and control of defects has proven crucial to distinguishing between intrinsic and extrinsic interface effects. This is well illustrated at the LaAlO3/SrTiO3 interface. After controlled experiments effectively eliminate the extrinsic effects that have been suggested as possible mechanisms of conductivity, electron microscopy reveals that defect compensation at the interface is different for A-site vs B-site rich systems, and the stoichiometry is key to the existence of the interface 2-dimentional electron gas.

Figure 1: Spectroscopic maps of La at LaAlO3/SrTiO3 interfaces. The maps are arranged in order of apparent La interdiffusion and labeled by the La/Al ratio. Samples with La/Al > 1 (light grey) showed insulating interfaces while La/Al<1 (dark grey) were conducting. As shown, there is no correlation between the La interdiffusion and the transport properties.

[1] D. A. Muller, L. F. Kourkoutis, M. Murfitt, J. H. Song, H. Y. Hwang, J. Silcox, N. Dellby, O. L. Krivanek, Science 319, 1073 (2008).

INV 3SIGNIFICANCE OF SOLID STATE IONICS FOR TRANSPORT AND STORAGE

Joachim Maier

Max Planck Institute for Solid State Research, Stuttgart, Germany

The role of ionic point defects and their impact on electronic charge carriers are considered form a thermodynamic point of view. Particular emphasis is laid on the influence of interfaces. The thermodynamic correspondence between ionic and electronic excitations is highlighted by Fig. 1.

Figure 1: Ionic and electronic disorder in bulk and at boundaries. According to Ref. [1].

The relations are set out using four examples. Example 1 discusses ionic and electronic transport in the bulk for typical transition metal oxide under full equilibrium at high temperatures and links the situation to a typical low temperature situation where the ionic point defects are frozen. This example highlights the significance of point defects and preparation conditions for electronic transport at room temperature [3].

Example 2 refers to the effect of grain boundaries on the ionic and electronic charge carrier distribution. The effects can be well understood by ionically dominated space charge phenomena. The mixed conductor SrTiO3 is considered here. Such space charge effects culminate in giant variations of n-, p- and oxygen ion conductivity in nanocrystalline SrTiO3 (see Fig. 2) solely due to the small grain size. The effect can be well explained as fully mesoscopic phenomena as a function of temperature and oxygen partial pressure [4].

Figure 2: Conductivity versus oxygen partial pressure P measured at 544 ÐC for microcrystalline (open squares) and nanocrystalline SrTiO3 (filled squares: 30nm) as a function of oxygen partial pressure. The p-type (n-type) conductivity is de creased (increased) by 3 orders of magnitude and the ion conductivity decreased by 6 orders of magnitude. According to Ref. [4].

Example 3 refers to an ionic conductor system and treats heterophase contacts [6]. MBE-grown multilayers of CaF2 and BaF2 (as well as composites) are investigated as a function of layer thickness ranging from ~ 1 μm (semi-infinite conditions) to ~ 1 nm (mesoscopic conditions) (see Fig. 3).

Figure 3: In CaF2-BaF2-heterostructures thermodynamic contact equilibrium demands fluorine ion redistribution (bottom).This leads to charge carrier accumulation in semi-infinite space charge zones (top, l. h. s.) or for very small spacings to a fully mesoscopic situation (top, r. h. s.). According to Ref. [5].

The greatly increased F- conductivity on size reduction can be well understood in terms of ionic charge transfer at the boundaries and shows the significance of “nanoionics” as a field of fundamental importance for energy research. The consideration of the full interfacial thermodynamics paved the way for “composite electrolytes” as a new class of solid electrolyte [6].

Example 4: Space charge effects do not only lead to drastically altered transport properties, they can also lead to drastically altered storage properties. As an example we consider the nano-composite Li2O/Ru in which quite an amount of lithium can be stored even though none of the individual phases can do this (Fig. 4).

Figure 4: The Li2O/M stores Li via job-sharing. This mechanism forms the bridge between an electrostatic composite and a battery electrode if the space charge profiles overlap. According to Ref. [7]

The reason lies in this novel “job-sharing” storage at the interface: Li2O stores Li+, Ru stores e-. This mechanism forms the bridge between an electrostatic and chemical capacitor [7].

[1] J. Maier, Physical Chemistry of Ionic Materials. Ions and Electrons in Solids, Wiley, 2004.

[2] R. Waser, J. Am. Ceram. Soc.74, 1934 (1991).

[3] J. Maier, Phys. Chem. Chem. Phys. 5, 2164 (2003).

[4] P.Lupetin, G. Gregori, and J. Maier, Angew. Chem. Int. Ed. 49, 10123 (2010).

[5] N. Sata, K. Eberman, K. Eberl, and J. Maier, Nature 408, 946 (2000).

[6] J. Maier, Nature Materials 4, 805 (2005); J. Maier, Prog. Solid St. Chem.23, 171 (1995).

[7] J. Maier, Faraday Discussions 134, 51 (2007).

INV 4ELECTROCHEMICAL DOPING OF OXIDE HETEROSTRUCTURES

E. Artacho1,2,6,7, N.C Bristowe1,2, P.B. Littlewood5, J.M. Pruneda8, M. Stengel3,4

1Theory of Condensed Matter, Cavendish Laboratory,University of Cambridge, Cambridge CB3 0HE, UK;2Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, UK;3ICREA - Instituciό Catalana de Recerca i Estudis Avan, cats, 08010 Barcelona, Spain;4Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain;5Physical Sciences and Engineering, Argonne National Laboratory, Argonne, Illinois 60439, USA;6CIC Nanogune, and Donostia International Physics Center DIPC, Tolosa Hiribidea 76, 20018 San Sebastian, Spain;7Basque Foundation for Science Ikerbasque, 48011 Bilbao, Spain;8Centre d’Investigación en Nanociéncia i Nanotecnologia (CSIC-ICN), Campus UAB, 08193 Bellaterra, Spain

Heterostructure oxides have emerged as a promising avenue to control electronic functionality by precise control of chemistry on the atomic scale. In particular, the possibility of utilising built-in electric fields in polar structures presents the possibility of modulation doping of two- dimensional electron gases (2DEG) in oxides. A case in point is the generation of carriers at the polar interface between LaAlO3 (LAO) and SrTiO3 (STO).

To progress, the origin of the 2DEG must be understood. While in pristine materials, electron transfer to counter the polar catastrophe would be expected1, often defects, non-stoichiometry and in particular surface O vacancies are the source. We find that surface redox reactions, in particular surface O vacancies, are thermodynamically stable under most growth conditions, using a phenomenological model supported by first principles calculations which is in agreement with spectroscopic data2. Pristine systems will likely require changed growth conditions or modifed materials with a lower vacancy free energy.

In a related problem, but against expectations, robust switchable ferroelectricity has been recently observed under open-circuit electrical boundary conditions in nm thick ferroelectric films. First principles calculations show that the pristine system does not polarize and instead we propose electrochemical ferroelectric switching as the phenomenon being observed3. If not exceeding its bulk value, the ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film.

FIG. 1: Schematic illustration of the conventional (left) and redox (center) mechanisms for ferroelectric screening in the absence of a top electrode. The presence of a biased tip can promote an alternative redox mechanism that provides an external circuit for the screening electrons (right). (From Ref 4)

The interplay of electrochemistry and modulation doping offers opportunities to speculate about novel nanoscale electrochemical and storage applications.

1 N.C. Bristowe, E. Artacho, and P.B. Littlewood, Phys. Rev. B 80 045425 (2009)

2 N. C. Bristowe, P. B. Littlewood, Emilio Artacho, Phys. Rev. B 83, 205405 (2011)

3 V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. Mathur, A. Barth_el_emy, and M. Bibes, Nature 460, 81 (2009).

4 N. C. Bristowe, Massimiliano Stengel, P. B. Littlewood, J. M. Pruneda, Emilio Artacho, Phys. Rev. B 85, 024106 (2012)

INV 5SWITCHABLE PHOTODIODE EFFECT IN FERROELECTRIC BiFeO3

S-W. Cheong, H. T. Yi, T. Choi, and A. Hogan

Rutgers Center for Emergent materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA

Using photodiodes and solar cells, solar energy can be converted directly into electric current flow and light illumination can modulate the current. The rectification at a p-n junction originates from carrier diffusion across the p-n barrier, associated with an internal electric field. Recently, to enhance the optical device and solar energy harvest functionalities, other types of photovoltaic cells have been widely researched. For example, the bulk photocurrent flow created in ferroelectrics such as LiNbO3 by UV light illumination depends upon the direction of ferroelectric polarization, leading to a ferroelectric photovoltaic (FPV) effect [2]. The main drawback of this fascinating FPV effect is the tiny magnitude of photocurrent in typically-insulating ferroelectrics. A recent breakthrough has been made in ferroelectric BiFeO3 (BFO) in which large FPV current is induced by visible light illumination [3]. On the other hand, the mechanism for this remarkable FPV effect in BFO is largely unknown, and technical exploitation has to be pursued.

Figure 1: I-V curves with downward polarization (top) and upward polarization (bottom). Black open circles are for the I-V curves in dark, and red and blue filled circles indicate current under green laser illumination. Cartoon shows the schematic of our experiment setup.

From comprehensive investigation of the photodiode effect in BFO, we found that significant rectification and ferroelectric photovoltaic effects exist in BFO, and the direction of the rectification and photovoltaic current is reversely switchable by large external voltages (Fig. 1). The forward bias direction is along the ferroelectric polarization direction while the photovoltaic current direction is against the polarization direction (Fig. 2). The polarization clearly plays an essential role on the rectification and photovoltaic effects. On the other hand, we unveiled that polarization flipping at low temperatures is not sufficient to switch the rectification direction and near-room-temperature poling is necessary for the switching, indicating that electromigration of defects such as oxygen vacancies is important for the switching [4]. The rectification effect is consistent with the presence of Schottky-to-Ohmic contacts, and the Schottky-to-Ohmic contacts appear to be switchable with external voltages. The switching of Schottky-to-Ohmic contacts results from a combined effect of polarization flipping and electromigration of defects (oxygen vacancies) from one contact to the other contact. We also found that the bulk absorption across the bulk band gap determines the photovoltaic effect, and external quantum efficiency of our simple device can be as large as ~1.5 % at ~2.9 eV. By engineering the band gap, carrier concentration, and device configurations, this fascinating switchable photovoltaic effect needs to be further exploited for novel technologies such as fast readout of ferroelectric state, ferroelectric solar cells, or ferroelectric sensors.

Fig. 2 Expanded view of the I-V curves for two different polarization orientations. Insets show zero-bias photocurrent with repetition of light on and off. Blue and red colored data are for upward and downward polarizations, respectively.

[1] A. M. Glass, D. von der Linde, and T. J. Negran, Appl. Phys. Lett. 25, 233 (1974).

[2] G. Dalba et al., Phys. Rev. Lett.74, 988 (1995).

[3] T. Choi at al., Science 324, 63 (2009).

[4] H. T. Yi et al., Adv. Mater. 23, 3403 (2011)

INV 6EXPLORATION OF ELECTRON SYSTEMS AT OXIDE INTERFACES

Werner Dietsche1, Benjamin Förg2, Cameron Hughes1, Carsten Woltmann1, Thilo Kopp2, Florian Loder2, Jochen Mannhart1, Natalia Pavlenko2, Christoph Richter1, Ulrike Waizmann1, Jürgen Weis1

1Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany2Experimental Physics VI, Augsburg University, 86135 Augsburg, Germany

Induced by quantum phenomena, oxide interfaces offer a fascinating potential to create novel electron systems. In this presentation, we will report on recent progress we have made in exploring the fundamental properties of the 2D electron liquid at LaAlO3-SrTiO3 interfaces.

Furthermore, we will analyse the potential of such 2D systems for use in future electronic devices. We have fabricated, for example, field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers’ n-type LaAlO3-SrTiO3 interface as drain-source channels and the LaAlO3 layers as gate dielectrics (Fig. 1). With gate voltages well below 1V, the devices are characterized by voltage gain and current gain [1].

Figure 1: IDS (VDS)-characteristics of a device measured in four-point configuration at -100, 20, and 100 °C. The measurement was done on a device with a channel length of 40 μm and a channel width of 1600 μm (from Ref. [1]).

[1] B. Förg, C. Richter, and J. Mannhart, Appl. Phys. Lett. 100, 053506 (2012).

INV 7THE INFLUENCE OF IMPERFECTIONS ON THE 2DEG TRANSPORT PROPERTIES IN THE LaAlO3-SrTiO3 SYSTEM

Guus Rijnders1

1University of Twente, MESA+ Institute for Nanotechnology, Enschede, the Netherlands

Within this contribution, I will focus on the creation and annihilation of oxygen vacancies in LaAlO3/SrTiO3 heterostructures, as well as their influence on the transport properties of the 2DEG created at the interface between LaAlO3 and SrTiO3. The manifestation of quantum behavior in two dimensional electron gases in semiconducting heterostructures and their progressive complexity towards fractional quantum Hall effect went hand-in-hand with the efforts to remove the effect of impurity scattering. For oxide materials, history is repeating itself and to date sample quality is reaching levels where quantum behavior starts to become accessible. To really understand the ground state of two dimensional electron gases in oxide LaAlO3-SrTiO3 systems, the influence of imperfections on the 2DEG should be investigated and minimized.

I will show that, due to redox reactions, oxygen vacancies can be created within SrTiO3 heterostructures. As an example, metallic conducting interfaces are observed in such heterostructures with various overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia (YSZ) films. Whereas, aninsulating heterointerface is found when the overlayer is an amorphous La7/8Sr1/8MnO3 film. I will present evidence that the interfacial conductivity results from the oxygen vacancies on the SrTiO3 substrate side due to the exposure of the substrate surface to reactive species of film growth, see figure 1. Although the energy of the arriving species has been suggested to be responsible for the creation of defects, the chemical reactivity of these species at the substrate surface has not been considered yet. Our results [1] show that the latter mechanism is an important source for the creation of mobile charge carriers in SrTiO3-based oxide heterostructures.

Figure 1: Schematic representation for the oxygen ions outward diffusion induced interfacial conduction in SrTiO3-based heterostructures during growth of the oxide films at room temperature.

On the other hand, impurity scattering can heavily reduce the carrier mobility in epitaxial heterostructures. I will show that the impurity level can be significantly suppressed by defect engineering, resulting in an increase of the carrier mobility, allowing, for instance, the observation of quantum transport. We used SrTiO3-LaAlO3 heterostructures with epitaxial capping layers, in which the latter plays an important role in the suppression of defect scattering.

Within the contribution, growth and properties of the complex oxide heterostructures will be presented, with a focus on the underlying mechanism of defect engineering.

[1] Nanoletters11 (9), (2011) 3774–3778

INV 8CORRELATED ELECTRONIC MATERIALS: COMPUTATIONAL STUDIES OF MULTIORBITAL MODELS FOR BULK COMPOUNDS AND INTERFACES OF MAGNETIC AND SUPERCONDUCTING MATERIALS

Elbio Dagotto1

1Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA, and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

The current status of computer simulations of model Hamiltonians for correlated electronic materials will be reviewed. The focus will be on the Mn-oxides with the colossal magneto-resistance (CMR) and the novel Fe-based high critical temperature superconductors. It will be shown that state-of-the-art computer simulations involving Monte Carlo studies of double-exchange models with Jahn-Teller phonons do display the CMR effect. This is exemplified in the figure on the right, reproduced from [1], where the calculated resistivity vs. temperature (in units of the hopping amplitude taa) is shown (with T/taa~0.09 being room temperature). Varying the super-exchange coupling JAFM, the results interpolate between those of a ferromagnetic metallic state to those corresponding to a competing insulator [1]. The interpolation, with an increasing resistivity that abruptly drops to a metallic state with decreasing temperature, is in excellent agreement with experiments carried out for a variety of rare-earth elements in the perovskite chemical formula, as discussed in [1].

In addition, it will be argued that multiple-orbital Hubbard models for pnictides and chalcogenides have magnetic order with the correct wavevector in the undoped-limit ground state, and pairing tendencies in several competing channels upon doping. For example the figure on the left shows the phase diagram of a three-orbital Hubbard model obtained via a mean-field approximation, reproduced from [2]. Shown are three regions: a non-magnetic metallic state at small Hubbard repulsion U, an insulator (with orbital order) at large U, and an intermediate phase with magnetic and metallic characteristics that seem to fit nicely the properties of the pnictides. In fact, the region shown in yellow, centered at a Hund coupling J which in units of U is approximately 0.25, corresponds to a regime where the theoretical results agree quantitatively with those of neutron and photoemission scattering, as discussed in [3]. A combination of localized and itinerant features appears to be needed for properly describing these exotic high-Tc superconductors that are in the “intermediate” coupling range between the weak and strong coupling limits, as exemplified in the sketched shown on the right reproduced from [3]. In this sketch, the yellow region is a magnetically ordered state that starts at small U (bandwidth W units) in a regime where Fermi surface nesting works, followed by an intermediate region where the pnictides may be located, and then ending in a large U insulating region where Heisenberg models with localized spins provide an accurate representation of the physics. The presentation will continue by addressing next the case of superlattices made of strongly correlated materials, as in the figure shown on the left, with emphasis on results for magnetic compounds, such as large- and low-bandwidth manganites (i.e. LMO/SMO, LMO/CMO), and also manganites/ferroelectrics. The focus will be on the states that are stabilized at the interfaces, some of which do not have an analog in the materials that form the superlattice when in bulk form, as reported in [4].

Time allowing, interesting results obtained using computational technique in quasi one dimensional systems will also be discussed. They correspond to the propagation of excitons, as those created in photovoltaic devices, in the framework of Hubbard insulators, as exemplified in the figure on the right that is reproduced from [5]. A real-time analysis can follow the “holon” and “doublon” as they propagate and eventually cross the boundary from the insulator to the metallic leads.

It is concluded that the use of computational techniques applied to model Hamiltonian systems is crucial for the analysis of a variety of interesting materials, with magnetic, superconducting, and multiferroic properties.

[1] C. Sen et al., Phys. Rev. Letters 105, 097203 (2010).

[2] Q. Luo et al., PRB 82, 104508 (2010).

[3] P. Dai, J. Hu, and E. Dagotto, Nature Physics (submitted).

[4] R. Yu et al., Phys Rev B 80, 125115 (2009).

[5] L. Dias et al., Phys. Rev. B 81, 125113 (2010).

Note: Different parts of the research reported in this presentation have been supported by the Department of Energy and the National Science Foundation of the USA.

INV 9ELECTROLYTE GATE INDUCED METALLIZATION OF SEVERAL FACETS (101, 001, 110 and 100) OF RUTILE TiO2 AND (001) SrTiO3

Stuart S.P. Parkin1, Thomas D. Schladt1, Tanja Graf1, Mingyang Li1,2, Nagaphani Aetukuri1,3, Xin Jiang1 and Mahesh Samant1

1IBM Almaden Research Center, San Jose, California, USA;2Department of Physics, Stanford University, Stanford, California, USA; 3Department of Materials Science and Engineering, Stanford University, Stanford, California, USA

The electric field induced metallization of insulating oxides is a powerful means of exploring and creating novel electronic states. Recently large internal electric fields from polar surfaces have been used to create emergent metallic, superconducting and magnetic states at interfaces between two insulating oxides1. However, the origin of the metallicity is a subject of considerable debate. Moreover, relying on the interface polar discontinuity to create the electric field restricts the interface orientation to that in which the surface of the polar material has an uncompensated charge. Electrolyte gating, on the other hand, can be applied to any crystal facet, and allows for varying electric fields and associated induced carrier densities. We have used electrolyte gating to study four different facets of rutile TiO2. Two of these, namely (101) and (001), show clear evidence of metallization, with a disorder-induced metal-to-insulator transition at low temperatures, whereas two other facets, (110) and (100), show no substantial effects (see Figure 1). This facet-dependent metallization can be correlated with the energy of formation of oxygen vacancies on the respective facet2, thereby clearly showing that gate induced charge transfer effects are not the sole origin of the metallicity. The orientation dependence of electrolyte gating is a novel way of distinguishing purely electrostatic field effects from electric field induced modifications of the surface structure and stoichiometry.

Figure 1: Left: Schematic diagram of the EDLT device configuration, showing the lateral gate electrode and the source and drain contacts to the surface of the TiO2. Right: Source-drain current ISD as a function of gate voltage VG for four crystal orientations of TiO2.

Figure 2: Top: Sheet resistance versus temperature curves for various gate voltages VG corresponding to the source-drain currents ISD shown in the inset to the figure. Bottom: Left: Sheet resistance plotted versus 1/ T1/3 in the non-percolative regime, and Right: Normalized sheet resistance versus temperature normalized to the Kondo temperature TK showing a resistance upturn and a temperature independent resistance as T → 0.

The role of disorder in the structure of the gated electrolyte is explored in studies of the electrolyte gate-induced conductance at the surface of single crystalline SrTiO3 (001). By varying the gate voltage and, thereby, the induced carrier density, we find two distinct transport regimes. At high carrier densities, a percolative, metallic state is induced in which, at low temperatures, signatures of a Kondo effect are clearly observed. Specifically, an upturn in resistance saturates to a constant value from below ~10% of the Kondo temperature down to the lowest temperatures measured (20 mK). At lower carrier densities, the resistance decreases from below the freezing temperature of the ionic liquid dielectric to a broad minimum below which the resistance diverges to very high values at low temperatures. In this regime the resistance increase can be well described by a variable range hopping model in two dimensions. We speculate that this results from non-percolative transport that likely results from inhomogeneous electric fields due to imperfect ordering of the ions at the frozen liquid/ oxide interface. Further evidence of the non-percolative and percolative regimes is provided by their nonlinear and linear current versus voltage behaviours, respectively, as well the much larger magnetoconductance in the non-percolative regime.

1 H. Y. Hwang et al. Nat. Mater. 11, 103 (2012).

2 B. J. Morgan and G. W. Watson, J. Phys. Chem. C 113, 7322 (2009).

INV 10COMPLEX THERMOELECTRIC MATERIALS

G. Jeffrey Snyder

California Institute of Technology, Pasadena, California 91125 USA

The widespread use of thermoelectric generators has been limited by the low material efficiency of the thermoelectric material. A number of strategies for Complex Thermoelectric Materials [1] with higher Thermoelectric figure of merit, zT, are being actively studied at Caltech.

Complex electronic band structures provide mechanisms to achieve high zT in thermoelectric materials through band structure engineering. High zT is obtained p-type PbTe and PbSe which contains both light and heavy valence bands that can be engineered to achieve high valley degeneracy which leads to an extraordinary peak zT of nearly 1.8 at 750K [2].