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Beschreibung

This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics. The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-state chemists and solid-state physicists alike.

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Table of Contents

Cover

Related Titles

Title Page

Copyright

List of Contributors

Preface

Chapter 1: Electronic Transport and Optical Properties of Graphene

1.1 Introduction

1.2 Basic Experimental Facts

1.3 Models for Transport in Graphene

1.4 DC Conductivity

1.5 AC Conductivity for Very Weak Scattering and Thermal Fluctuations

1.6 Plasmons

1.7 Discussion

References

Chapter 2: Synthesis and Modification of Graphene

2.1 Synthesis of Graphene

2.2 Modification and Functionalization of Graphene

2.3 Concluding Remarks and Perspectives

References

Chapter 3: Graphene for the Elaboration of Nanocomposite Films for Optoelectronic Applications

3.1 Introduction

3.2 Synthesis and Optical Characterization of Few-layered Graphene Oxide (FGO)

3.3 Graphene as Seed Layer for Synthesis of DLC Free-Standing Films for Ultrahigh-Intensity Laser-Based Electron/Proton Acceleration Applications

3.4 ZnO/Graphene Nanorod Composites for LED Application

3.5 Conclusions

Acknowledgments

References

Chapter 4: Metallic and Passive Components

4.1 Introduction

4.2 History of Graphene

4.3 Applications

References

Chapter 5: High-Frequency Devices

5.1 Graphene Transistor

5.2 Functional Circuits

5.3 Self-Aligned Electrode

5.4 Dielectrophoresis

References

Chapter 6: Bandgap Engineering in Graphene

6.1 Introduction

6.2 Bandgap Engineering in Bilayer and Multilayer Graphene

6.3 Bandgap Engineering in Graphene Nanoribbon

6.4 Bandgap Engineering by Strain

6.5 Summary

References

Chapter 7: Graphene Spintronics: Spin Generation and Manipulation in Graphene

7.1 Background and Challenges

7.2 Spin Generation in Graphene

7.3 Spin Manipulation in Graphene

7.4 Conclusion

References

Chapter 8: Magnetism and Spintronics in Graphenes: Spin Hall Effect and Edge-Derived Spin Phenomena

8.1 Introduction

8.2 Magnetism and Spintronic Phenomena Arising from Pore Edge Spins in Graphene Nanomeshes

8.3 Recent Advances in Experiments of Spin-Based Phenomena in Graphenes

8.4 Conclusions

Acknowledgments

References

Chapter 9: Graphene: Manipulate Terahertz Waves

9.1 Introduction

9.2 THz Properties of Graphene

9.3 Proof-of-Concept Graphene Devices

9.4 Advanced THz Wave Manipulation: Graphene Plasmons and Metamaterials

9.5 Conclusions and Perspective

Acknowledgments

References

Chapter 10: Chemical and Biosensors Based on Graphene Materials

10.1 Introduction

10.2 Graphene-Based Electronic Sensors

10.3 Graphene-Based Electrochemical Sensors

10.4 Graphene-Based Optical Sensors

10.5 Conclusion

Acknowledgments

Abbreviations

References

Index

End User License Agreement

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Guide

Cover

Table of Contents

Preface

Chapter 1: Electronic Transport and Optical Properties of Graphene

List of Illustrations

Figure 1.1

Figure 1.2

Figure 1.3

Figure 1.4

Figure 2.1

Figure 2.2

Figure 2.3

Figure 2.4

Figure 2.5

Figure 2.6

Figure 2.7

Figure 2.8

Figure 2.9

Figure 2.10

Figure 3.1

Figure 3.2

Figure 3.3

Figure 3.4

Figure 3.6

Figure 3.5

Figure 3.7

Figure Scheme 3.1

Figure 3.8

Figure 3.9

Figure 3.10

Figure 4.1

Figure 4.2

Figure 4.3

Figure 4.4

Figure 4.5

Figure 4.6

Figure 4.7

Figure 4.8

Figure 4.9

Figure 4.10

Figure 4.11

Figure 4.12

Figure 4.13

Figure 4.14

Figure 4.15

Figure 4.16

Figure 4.17

Figure 4.18

Figure 4.19

Figure 4.20

Figure 4.21

Figure 4.22

Figure 4.23

Figure 4.24

Figure 4.25

Figure 4.26

Figure 4.27

Figure 4.28

Figure 4.29

Figure 4.30

Figure 5.1

Figure 5.2

Figure 5.3

Figure 5.4

Figure 5.5

Figure 5.6

Figure 5.7

Figure 5.8

Figure 5.9

Figure 5.10

Figure 5.11

Figure 5.12

Figure 5.13

Figure 5.14

Figure 5.15

Figure 5.16

Figure 5.17

Figure 5.18

Figure 5.19

Figure 5.20

Figure 5.21

Figure 5.22

Figure 5.23

Figure 5.24

Figure 5.25

Figure 5.26

Figure 5.27

Figure 5.28

Figure 5.29

Figure 5.30

Figure 5.31

Figure 6.1

Figure 6.2

Figure 6.3

Figure 6.4

Figure 6.5

Figure 6.6

Figure 6.7

Figure 6.8

Figure 6.9

Figure 7.1

Figure 7.2

Figure 7.3

Figure 7.4

Figure 7.5

Figure 7.6

Figure 7.7

Figure 7.8

Figure 7.9

Figure 7.10

Figure 7.11

Figure 8.1

Figure 8.2

Figure 8.3

Figure 8.4

Figure 8.5

Figure 8.6

Figure 9.1

Figure 9.2

Figure 9.3

Figure 9.4

Figure 9.5

Figure 9.6

Figure 9.7

Figure 9.8

Figure 9.9

Figure 9.10

Figure 9.11

Figure 10.1

Figure 10.2

Figure 10.3

Figure 10.4

Figure 10.5

Figure 10.6

Figure 10.7

Figure 10.8

Figure 10.9

List of Tables

Table 1.1

Table 4.1

Table 4.2

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Edited by A. Rashid binMohd Yusoff

Graphene Optoelectronicss

Synthesis, Characterization, Properties, and Applications

Editors

Prof. A. Rashid bin Mohd Yusoff

Kyung Hee University

Information Display

Dongdaemoon-ku

130-701 Seoul

South Korea

Cover

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The Deutsche Nationalbibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data are available on the Internet at <http://dnb.d-nb.de>.

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List of Contributors

Jintao Bai

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Zhaoqiang Bai

National University of Singapore

Department of Physics

Science Drive 3

Singapore 117542

Singapore

Mimouna Baitoul

University Sidi Mohamed Ben Abdellah

Faculty of Sciences, Dhar el Mahraz

Laboratory of Solid State Physics

Group of Polymer and Nanomaterials

Avenue Mohamed bel arbi Alaoui

P.O Box 1796

Atlas, Fez 30,000

Morocco

Jeong-Woo Choi

Sogang University

Department of Chemical and Biomolecular Engineering

Seoul

35 Baekbeom-ro(Sinsu-dong)

Mapo-gu, Seoul 121-742

Korea

Yi Cui

National Center for Nanoscience and Technology

Laboratory of Nanodevices

Beiyotoao Zhongguancun

Beijing, 100190

P.R China

Haiming Fan

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Yuan P. Feng

National University of Singapore

Department of Physics

Science Drive 3

Singapore 117542

Singapore

Jing Guo

University of Florida

Department of Electrical and Computer Engineering

Gainesville

1064 Center Drive

FL 32611

USA

Bao-Hang Han

National Center for Nanoscience and Technology

Laboratory of Nanodevices

Beiyotoao Zhongguancun

Beijing, 100190

P.R China

Junji Haruyama

Aoyama Gakuin University

Faculty of Science and Engineering

5-10-1 Fuchinobe

Sagamihara

Kanagawa, 252-5258

Japan

Antonio Hill

Universität Augsburg

Institute of Physics

Augsburg D-86135

Germany

Mohammed Khenfouch

University of South Africa

UNESCO Africa Chair in Nanosciences-Nanotechnology

College of Graduate Studies

Preller street

Muckleneuk ridge, P.O. Box 392

Pretoria-South 0003

Africa

and

University Sidi Mohamed Ben Abdellah

Faculty of Sciences, Dhar el Mahraz

Laboratory of Solid State Physics

Group of Polymer and Nanomaterials

Avenue Mohamed bel arbi Alaoui

P.O Box 1796

Atlas, Fez 30,000

Morocco

and

Nanosciences African Network (NANOAFNET)

iThemba LABS-National Research Foundation

Old Faure Road

P.O Box 722, Somerset West

Western Cape Province 7129

South Africa

Seong C. Jun

Yunsei University

School of Mechanical Engineering

Seongsanno

Seodaemun-gu

Seoul, 120-749

Korea

Tae-Hyung Kim

Rutgers

The State University of New Jersey

Department of Biomedical Engineering

Taylor Road

Piscataway

NJ 08854

USA

and

Rutgers

The State University of New Jersey

Department of Chemistry and Chemical Biology

Taylor Road

Piscataway

NJ 08854

USA

Kai-Tak Lam

University of Florida

Department of Electrical and Computer Engineering

Gainesville

1064 Center Drive

FL 32611

USA

Ki-Bum Lee

Rutgers

The State University of New Jersey

Department of Biomedical Engineering

Taylor Road

Piscataway

NJ 08854

USA

and

Rutgers

The State University of New Jersey

Department of Chemistry and Chemical Biology

Taylor Road

Piscataway

NJ 08854

USA

Jiayuan Li

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Malik Maaza

University of South Africa

UNESCO Africa Chair in Nanosciences-Nanotechnology

College of Graduate Studies

Preller street

Muckleneuk ridge, P.O. Box 392

Pretoria-South 0003

Africa

and

Nanosciences African Network (NANOAFNET)

iThemba LABS-National Research Foundation

Old Faure Road

P.O Box 722, Somerset West

Western Cape Province 7129

South Africa

Mei Qi

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Zhaoyu Ren

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Lei Shen

National University of Singapore

Department of Physics

Science Drive 3

Singapore 117542

Singapore

Andreas Sinner

Universität Augsburg

Institute of Physics

Augsburg D-86135

Germany

Mohd Asri bin Mat Teridi

Universiti Kebangsaan Malaysia

Solar Energy Research Institute (SERI)

Bangi

Selangor, 43600

Malaysia

Qingyun Wu

National University of Singapore

Department of Physics

Science Drive 3

Singapore 117542

Singapore

Xinlong Xu

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Perry T. Yin

Rutgers

The State University of New Jersey

Department of Biomedical Engineering

Taylor Road

Piscataway

NJ 08854

USA

A. Rashid bin Mohd Yusoff

Kyung Hee University

Department of Information Display

Advanced Display Research Center

Dongdaemoon-gu

Seoul 130-701

South Korea

Minggang Zeng

National University of Singapore

Department of Physics

Science Drive 3

Singapore 117542

Singapore

Ding Zhou

National Center for Nanoscience and Technology

Laboratory of Nanodevices

Beiyotoao Zhongguancun

Beijing, 100190

P.R China

Yixuan Zhou

Northwest University

State Key Lab Incubation Base of Photoelectric Technology and Functional Materials

International Cooperation Center of Photoelectric Technology and Functional Materials

and Institute of Photonics and Photon-Technology

No 229 Taibai North Road

Xi'an, 710069

P.R China

Klaus Ziegler

Universität Augsburg

Institute of Physics

Augsburg D-86135

Germany

Preface

Back in the 1920s, graphene was recognized as a carbon sheet one atom thick and consisting of a two-dimensional honeycomb lattice. It is now considered as the thinnest material in the world. It can also be considered as the basic unit for other carbon materials. The first report by A. K. Geim and his coworkers utilizing a simple micromechanical cleavage to extract graphene has received huge attention and earned them the Nobel Prize in physics in the year 2010. Since their first report, graphene has created a surge in research activities due to its high current density, ballistic transport, chemical inertness, high thermal conductivity, optical transmittance, and super hydrophobicity at the nanometer scale. In this sense, this book aims to present an overview of recent advances in research in the field of graphene, specifically in the areas of synthesis, characterization, properties, and applications, including high-frequency devices, sensors, spintronics, bandgap engineering, and photonics. Researchers from various fields, including physics, chemistry, materials, chemistry, biology, and engineering, have prepared their contributed chapters based on their research expertise in these wide fields.

The book is organized into 10 chapters. Chapter 1 is an introduction to the fundamental properties of graphene, including transport theory in the absence of an external magnetic field. The electronic properties of mono and bilayer graphene are strongly related to the existence of a quasiparticle spectrum that consists of two bands that touch each other at two Dirac nodes. Moreover, Chapter 1 also discusses the diffusion in graphene, which implies a characteristic metallic behavior in mono and bilayer graphene as well as the AC conductivity. In the end, Chapter 1 deals with the behavior of plasmons in graphene which is similar to that of plasmons in a conventional two-dimensional electron gas.

Chapter 2 deals with the synthesis techniques of graphene that have been employed, with “top-down” and “bottom-up” approaches. The top-down approach consists of mechanical cleavage, liquid-phase exfoliation, oxidation–reduction, and exfoliation of graphite intercalation compounds. This technique can be considered as a kind of exfoliation technique that produces graphene from graphite through breaking of the weak van der Waals force. On the other hand, the bottom-up approach consists of chemical vapor deposition (CVD), epitaxial growth, and chemical synthesis. Traditional CVD methods usually require high temperatures of about 1000 °C; however, in the case of graphene the CVD method has been modified to achieve high-speed, low-temperature deposition using plasma-enhanced CVD (PECVD), without the need of any special surface preparation or catalyst deposition. Finally, the modification and functionalization of graphene is also discussed in this chapter.

Chapter 3 deals with optical characterization of freestanding, diamond-like carbon and zinc oxide nanorod–graphene nanocomposite. The freestanding carbon is deposited by means of pulsed lased deposition, and Raman, ultraviolet–visible–near infrared, infrared, and photoluminescence spectroscopic techniques are used in these investigations. Finally, Chapter 3 also discusses possible LED applications based on zinc oxide nanorod–graphene nanocomposites.

Chapter 4 deals with graphene metallic and passive components. The chapter starts with a brief history of grapheme, followed by an extensive review on various applications such as transparent and flexible electrodes, liquid crystal displays, flexible smart windows and bistable displays, light emitting devices, and touch panel devices. Because of its promising features such as high charge mobility, transparency, mechanical strength, and flexibility, graphene plays a vital role as the transparent electrode in many electronic devices. In Chapter 4, the question as to why graphene can be a potential candidate to replace the commonly used transparent electrode indium tin oxide (ITO) is answered. In the end, Chapter 4 also deals with photovoltaic devices that have received huge attention in terms of anode and cathode buffer layers.

Chapter 5 deals with large-scale graphene growth, which offers a viable route toward high-frequency devices. Although a major issue is to synthesize and fabricate high-frequency devices with high carrier mobility, this chapter discusses the current efforts to understand and control the growth mechanism and fabrication of the devices. Graphene transistor, graphene functional circuit, and self-aligned electrode are also discussed comprehensively in this chapter. Finally, graphene dielectrophoresis, which handles the phenomenology of the particles subjected to an electric and a magnetic field, is also discussed.

Chapter 6 deals with bandgap engineering of graphene, which can be divided into three categories, namely surface bonding, isoelectronic codoping, and alternating electrical/chemical environment. The surface bonding usually lifts the top σ valence bands over the π valence states, and consequently opens an sp3 bandgap of graphene. By breaking the equivalence of the sublattices, isolectronic codoping and alternating chemical environment would effectively open the π–π* bandgap of graphene. In Chapter 6, bandgap engineering in bilayer and multilayer graphene, as well as in graphene nanoribbons, is discussed. Finally, bandgap engineering by strain is also dealt with in this chapter.

Chapter 7 deals with spintronics in graphene. In spintronics, there are three major parts: generation, detection, and manipulation, among which spin generation is the most important one. It can be considered as the basis of the other two. Thus, Chapter 7 mostly discusses spin generation and manipulation in graphene. Driving spin into graphene is also discussed by various methods, including magnetic field, tunneling, and heat. Finally, Chapter 7 ends with the functionalization of spin current by spin logics.

Chapter 8 deals with magnetism and spin phenomenon arising from pore edge spins in graphene nanomeshes. It discusses ferromagnetism, non-lithographic fabrication of graphene nanomeshes with zigzag pore edges, and defect-dependent, spin-related phenomena in magnetoresistance measurement. At the end of the chapter, recent advances in spin-based phenomena (SHE) are also discussed.

Chapter 9 deals with the manipulation terahertz waves in graphene. Basically, there are several terahertz properties and applications of grapheme, such as unique terahertz response, terahertz lasers, terahertz device concepts, and the reconfigurable terahertz optoelectronics. In this chapter, extensive discussions on the static terahertz properties and new concepts to manipulate terahertz waves, ranging from electrooptic and magnetooptic to all-optic modulation based on the intrinsic terahertz properties, are given. Finally, advanced terahertz wave manipulation and the concept of plasmons and metamaterials with graphene are discussed.

Chapter 10 deals with chemical and biological sensors. Chemical and biosensors are becoming an indispensable part of our society with wide usage across various fields, including biomedical, chemical processing, clinical, environmental, food, military, pharmaceutical, and security applications. In general, sensors are composed of two fundamental constituents: (i) a recognition element that is designed to be sensitive to a particular stimulus, and (ii) a transduction element that is responsible for generating a signal whose magnitude can then be used to determine the concentration of the analyte. This chapter discusses the latest developments in the application of graphene-based materials to chemical and biosensors. It starts with electronic and electrochemical sensors, which also include biosensors, and ends with a discussion based on optical sensors.

This book contains materials from various sources including the authors' previously published articles, their latest experiments, and their lecture notes. All materials in this book have been organized, reviewed, and now presented in a consistent and more readable way because they have been reviewed very thoroughly and reformulated where necessary. It has been a great pleasure contributing to and at the same time editing this book on the device physics of graphene. For me, this book was a labor of love, and the adventure involved in compiling the content along a unifying theme was a great enriching experience and sufficient reward in and of itself. I hope that all readers will similarly find great enrichment and understanding as they explore the pages of this book. Finally, I would like to thank my lovely wife Sharifah Nurilyana and my family for their support and understanding. Special thanks also are due to my students, colleagues, and, last but not least, my director, Jin Jang, for fruitful discussions and help.

A. Rashid bin Mohd Yusoff

1Electronic Transport and Optical Properties of Graphene

Klaus Ziegler, Antonio Hill and Andreas Sinner

Universität Augsburg, Institute of Physics, Augsburg, D-86135, Germany

1.1 Introduction

The enormous list of publications on transport measurements in graphene starts with the seminal papers by the groups from Manchester and Columbia [1]a. Already these studies indicated a very robust transport behavior, which is characterized by a “V”-shaped conductivity with respect to charge density and a minimal conductivity at the charge neutrality point . In the presence of a magnetic field, there are Shubnikov–de Haas oscillations for the longitudinal conductivity and quantum Hall plateaux for the Hall conductivity at a sufficiently strong magnetic field. These properties have been confirmed subsequentlyby various experimental groups in more detailed studies and measurements under various conditions and for different types of samples. Many of those results are collected and discussed in a number of extensive reviews [2–4].

Optical properties of graphene for light with frequency are (directly) related to the optical (or AC) conductivity . The imaginary part of the dielectric constant is related to the real part of the AC conductivity and, therefore, to the optical reflectivity and transmittance [5].

The aim of this chapter is to explain how the transport properties are related to fundamental physical principles, and we will focus on transport in the absence of a magnetic field. Transport in metals is based on the assumption that the charge carriers are Fermionic quasiparticles. The quasiparticles scatter on each other and on the impurities or defects of the underlying lattice structure. This represents a complex dynamical system which can be treated in practice only under some simplifying assumptions. First, we consider only independent quasiparticles of the system and average over all possible scattering effects. For the latter, we introduce a static distribution by assuming that the relevant scattering processes happen only on time scales that are large in comparison with the tunneling process of the quasiparticle in the lattice. In other words, the probability for the quasiparticle to move from site to site during the time is , where is the hopping Hamiltonian. Second, if we assume that describes diffusion, we can obtain the mean-square displacement with respect to from the diffusion equation

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Lesen Sie weiter in der vollständigen Ausgabe!

Lesen Sie weiter in der vollständigen Ausgabe!

Lesen Sie weiter in der vollständigen Ausgabe!

Lesen Sie weiter in der vollständigen Ausgabe!

Lesen Sie weiter in der vollständigen Ausgabe!

Lesen Sie weiter in der vollständigen Ausgabe!