Nanodevices for Integrated Circuit Design E-Book

• Herausgeber: John Wiley & Sons
• Kategorie: Wissenschaft und neue Technologien
• Sprache: Englisch

Seitenzahl: 391

Veröffentlichungsjahr: 2023

Beschreibung

NANODEVICES FOR INTEGRATED CIRCUIT DESIGN Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily. Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.

Leseprobe

Table of Contents

Cover

Table of Contents

Series Page

Title Page

Copyright Page

List of Contributors

Preface

Acknowledgements

1 Growth of Nano-Wire Field Effect Transistor in 21

st

Century

1.1 Introduction

1.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET)

1.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET)

1.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET)

1.3 Application of Nanowire Field-Effect-Transistors (NW-FET)

1.4 Conclusion

References

2 Impact of Silicon Nanowire-Based Transistor in IC Design Perspective

2.1 Introduction

2.2 Nanoscale Devices

2.3 Nanowire Heterostructures and Silicon Nanowires

2.4 Performance Analysis of Si Nanowire with SOI FET

2.5 Conclusion

References

3 Kink Effect in Field Effect Transistors: Different Models and Techniques

3.1 Introduction

3.2 Techniques of Kink Effect

3.3 Different Models of Kink Effect

3.4 Kink Effect in MOS Capacitors

3.5 Conclusion

References

4 Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications

4.1 Introduction of Two-Dimensional Materials

4.2 Evaluation of 2D-Materials

4.3 Overview of MoS2

4.4 Properties of MoS2

4.5 Fabrication of MoS2

4.6 Applications of MoS2

4.7 Comparison of Other 2D Materials with MoS2

4.8 Conclusion

References

5 Impact of Working Temperature on the I

ON

/I

OFF

Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction

5.1 Introduction

5.2 Device Structure

5.3 Results and Discussion

5.4 Conclusion

References

6 Analysis of RF with DC and Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications

6.1 Introduction

6.2 Structure of GAA-JLFET

6.3 Results and Discussion

6.4 Applications

6.5 Conclusion

References

7 E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications

7.1 Silicon Era and Scaling Limit

7.2 III-V GaN-Based Compound Semiconductors

7.3 Band-Gap Engineering

7.4 Quantum Well

7.5 Polarization in GaN Devices and their Specific Properties

7.6 Strain and Lattice Mismatch in III-N Semiconductors

7.7 High Electron Mobility Transistors (HEMTs)

7.8 Two-Dimensional Electron Gas (2DEG)

7.9 AlGaN/GaN Heterostructure HEMT

7.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer

7.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices

7.12 Conclusion

References

8 Design of FinFET as Biosensor

8.1 Introduction

8.2 Existing FET Based Biosensors

8.3 Performance Parameters of Biosensors

8.4 FinFET Designed as Biosensor Using Visual TCAD

8.5 Biosensors in Disease Detection

8.6 Conclusion

8.7 Acknowledgement

References

9 Biodegradable and Flexible Electronics: Types and Applications

9.1 Introduction

9.2 Biodegradable and Flexible Electronics

9.3 Types of Materials Used for Biodegradable and Flexible Electronics

9.4 Applications of Biodegradable and Flexible Electronic Devices

9.5 Conclusion

References

10 Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit

10.1 Introduction

10.2 Review of the Technology and Physics of Power PIN Diodes

10.3 State of the Art of PIN Diode Parameters Extraction

10.4 Proposed Method

10.5 Validation

10.6 Conclusion

References

11 Edge AI – A Promising Technology

11.1 Introduction

11.2 Deep Neural Networks

11.3 Model Compression Techniques for Deep Learning

11.4 Computing Infrastructures

11.5 Conclusion

References

12 Tunable Frequency Oscillator

12.1 Introduction

12.2 Experimental Methods and Materials

12.3 Results and Discussion

12.4 Conclusion

References

13 Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications

13.1 Introduction – An Explanation of the Process and Approach

13.2 Nanomaterials

13.3 Synthesis and Characterization of Nano Materials

13.4 Characterization Technique for Structural Analysis

13.5 Magnetic Materials

13.6 Classification of Magnetic Materials

13.7 Magnetic Properties

13.8 Ferrites

13.9 Applications of Magnetic Materials

13.10 Conclusion

References

About the Editors

Index

Also of Interest

End User License Agreement

List of Tables

Chapter 1

Table 1.1 Comparison of the different figures of merits between FinFET and NW-FET, having similar dimensions and other parameters, as reported in [28].

Chapter 2

Table 2.1 Performance analysis of Si nanowire and SOI FET’s major device parameters.

Chapter 4

Table 4.1 Shows the valleytronics spin-orbit orientations.

Table 4.2 Comparison of structural level coordinates between different MoS2 structural polytypes.

Table 4.3 Different properties and materials used in designing monolayer MoS2 devices.

Table 4.4 Shows the current conductivity ratio of MOSFET.

Table 4.5 Shows different band gaps for different 2D materials, both in Bulk-layered and Mono-layered forms. Depending on the application and design structure of the device, the respective band gap is selected for the materials.

Chapter 5

Table 5.1 Used device parameters.

Chapter 6

Table 6.1 Device parameters of gate all around junctionless FET (GAA-JLFET).

Chapter 7

Table 7.1 Compares some primary factors that have a significant impact on the basic performance parameters of the devices [7–9].

Chapter 8

Table 8.1 Physical parameters of 18 nm FinFET as biosensor.

Table 8.2 Comparison of performance characteristics of 18 nm FinFET with nanowire.

Chapter 9

Table 9.1 Average lifespan of electronic devices [1].

Table 9.2 Electrical properties of organic TFT fabricated on PLGA substrate with nPVA and xPVA dielectrics [2].

Chapter 10

Table 10.1 Relative variation between simulation (Sentaurus and model) and experiment for the transient parameters in the three cases of measurement of the STTA1206D diode.

Table 10.2 Values of the parameters A, W and N

D

obtained with the identification procedure.

Table 10.3 Ambipolar lifetime values for different power diodes obtained by OCVD Method.

Chapter 11

Table 11.1 Computational complexity of CNNs.

Table 11.2 Effect of quantization on network models.

Table 11.3 Effect of compression on time and energy consumption.

Chapter 13

Table 13.1 Surface area to volume relation.

Table 13.2 Different types of magnetism.

Table 13.3 Structural classification of ferrites [45].

Table 13.4 Classification of hexagonal ferrites [52].

Guide

Cover

Table of Contents

Title Page

Copyright

Begin Reading

Index

Also of Interest

End User License Agreement

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Scrivener Publishing100 Cummings Center, Suite 541JBeverly, MA 01915-6106

Publishers at ScrivenerMartin Scrivener ([email protected])Phillip Carmical ([email protected])

Nanodevices for Integrated Circuit Design

Edited by

Suman Lata TripathiAbhishek KumarK. Srinivasa RaoandPrasantha R. Mudimela

This edition first published 2023 by John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, USA and Scrivener Publishing LLC, 100 Cummings Center, Suite 541J, Beverly, MA 01915, USA© 2023 Scrivener Publishing LLCFor more information about Scrivener publications please visit www.scrivenerpublishing.com.

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Library of Congress Cataloging-in-Publication Data

ISBN 9781394186372

Cover image: Nanotechnology, Yuriy Nedopekin | Dreamstime.comCover design by Kris Hackerott

List of Contributors

Kunal SinhaDept. of Electronics, Asutosh College, Kolkata, India

G. Boopathi RajaDepartment of ECE, Velalar College of Engineering and Technology, Erode, India

Abdelaali FargiLaboratory of Microelectronics and Instrumentation, Department of Physics, University of Monastir, Monastir, Tunisia

Sami GhediraLaboratory of Microelectronics and Instrumentation, Department of Physics, University of Monastir, Monastir, Tunisia

Adel KalboussiLaboratory of Microelectronics and Instrumentation, Department of Physics, University of Monastir, Monastir, Tunisia

Vydha Pradeep KumarDept. of Sense, VIT-AP University, Near Vijayawada, India

Deepak Kumar PandaDepartment of ECE, Amrita School of Engineering Amaravati, Amrita Vishwa Vidyapeetham, Andhra Pradesh, India

Bijoy GoswamiDept. of ETE, Assam Eng. College, Assam, India

Savio Jay SenguptaDept. of ETE, Jadavpur University, West-Bengal, India

Ankur Jyoti SarmahDept. of ETE, Assam Eng. College, Assam, India

Nalin Behari Dev ChoudhuryDept. of EE, National Institute of Tech., Assam, India

Pratikhya RautECE Department, VR Siddhartha Engineering College, Kanuru, Vijayawada, Andhra Pradesh, India

Umakanta NandaSchool of Electronics, VIT-AP University, Near Vijayawada, India

A. MohanbabuDepartment of Electronics and Communication Engineering, SRM Institute of Science and Technology, Ramapuram, Chennai, India

N. VinodhkumarDepartment of Electronics and Communication Engineering, Vel Tech Rangarajan, Dr. Sagunthala R&D Institute of Science and Technology, Chennai, India

S. MaheswariDepartment of Electronics and Communication Engineering, Panimalar

Engineering College, Chennai, India

S. BaskaranDepartment of Electronics and Communication Engineering, SKPEngineering College, Tiruvannamalai, Chennai, India

V. JanakiramanDepartment of Electronics and Communication Engineering, Dhanalakshmi Srinivasan College of Engineering and Technology, Chennai, India

M. SaravananSri Eshwar College of Engineering, Coimbatore, Tamil Nadu, India

P. MurugapandiyanAnil Neerukonda Institute of Technology & Sciences, Visakhapatnam, Andhra Pradesh, India

Suman Lata TripathiVLSI Design Lab, School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, India

Balwinder RajDepartment of Electronics and Communication Engineering, NIT, Jalandhar, India

Vrinda GuptaDept. of Electronics & Communication Engineering, NIT Kurukshetra, Kurukshetra, India

Sachin HimalyanSchool of VLSI Design and Embedded Systems, NIT Kurukshetra, Kurukshetra, India

Archit SundriyalSchool of VLSI Design and Embedded Systems, NIT Kurukshetra, India

Remya R.Department of ECE, Indian Institute of Information Technology Kottayam, Kerala, India

Nalesh S.Department of Electronics, Cochin University of Science and Technology, Kerala, India

Kala S.Department of ECE, Indian Institute of Information Technology Kottayam, Kerala, India

Abhishek KumarSchool of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India

Preface

Increasing demand for smart and intelligent devices with better sensing and processing is the one of the main challenges for future device and circuit design. The primary requirement of data-driven decision devices is to have smaller sizes and lower power consumption. Research is being carried out to find suitable materials, to replace and build upon silicone. The most promising replacement for lithographic-based integrated circuits appears to be nano-electronics or circuits constructed with components as small as 10 nanometers. In the past two decades, nanotechnology has emerged as an most important and fascinating area in a variety of science and technology disciplines. Device modeling, fabrication and circuit development with emerging nanodevices like NanoWire, Quantum Well, and CarbonNanoTube are discussed in this book. Beginning with semiconductor devices and continuing through VLSI fabrication, modeling of (analog and digital), and upcoming non-silicon/nanodevices, a wide range of applications, such as high-speed and high-power electronics, as well as the necessity for energy conservation today, interest in the field of nitride-based devices, has grown recently. The emphasis on flexible electronic technology research has increased with the increasing demand for wearable and printable electronic technology. This book offers extensive analysis and demonstration of nanomaterials, wearable electronics, and circuit simulation.

Acknowledgements

The authors would like to thank Department of VLSI Design, Lovely Professional University, Phagwara, India, Department of ECE, NIT Jalandhar and DST SERB (TAR/2022/000325) for provizing necessary facilities required for completing this book. The authors would also like to thank the researchers from different organizations like IIT, NIT, India and international universities etc. who are contributing their book chapters in this book.