Organic Electronics II E-Book
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- Herausgeber: Wiley-VCH
- Kategorie: Wissenschaft und neue Technologien
- Sprache: Englisch
Like its predecessor this book is devoted to the materials, manufacturing and applications aspects of organic thin-film transistors. Once
again authored by the most renowned experts from this fascinating and fast-moving area of research, it offers a joint perspective both
broad and in-depth on the latest developments in the areas of materials chemistry, transport physics, materials characterization, manufacturing technology, and circuit integration of organic transistors. With its many figures and detailed index, this book once again also serves as a ready reference.
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Seitenzahl: 766
Veröffentlichungsjahr: 2012
Ähnliche
Table of Contents
Related Titles
Title Page
Copyright
Preface
List of Contributors
Part I: Materials
Chapter 1: Organic Semiconductor Materials for Transistors
1.1 General Considerations
1.2 Materials Properties of Organic Semiconductors
1.3 Small Molecule Semiconductors
1.4 Polymer Semiconductors
1.5 Semiconductor Blends
1.6 Device Physics and Architecture
1.7 Summary
References
Chapter 2: Characterization of Order and Orientation in Semiconducting Polymers
2.1 Introduction
2.2 X-Ray Diffraction
2.3 Near-Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy
References
Chapter 3: Charge Transport Theories in Organic Semiconductors
3.1 Introduction
3.2 Well-Ordered Systems: Organic Single Crystals
3.3 Disordered Materials
3.4 Conclusions
Acknowledgments
References
Chapter 4: Silylethyne-Substituted Acenes and Heteroacenes
4.1 Introduction
4.2 Silylethyne-Substituted Pentacenes
4.3 Crystal Packing
4.4 Heteroacenes
4.5 Silylethynyl Heteroacene-Based Polymers
4.6 Silylethynyl Heteroacene-Based Photovoltaics
4.7 Conclusion
References
Chapter 5: Conjugated Semiconductors for Organic n-Channel Transistors and Complementary Circuits
5.1 Introduction
5.2 Basics of Field-Effect Transistors and Complementary Circuits
5.3 Material Design and Needs for n-Channel OTFTs
5.4 n-Channel Semiconductors for OTFTs
5.5 Conclusions and Outlook
References
Chapter 6: Low-Voltage Electrolyte-Gated OTFTs and Their Applications
6.1 Overview
6.2 Introduction to Electrolyte-Gated Organic Transistors
6.3 Applications of Electrolyte-Gated Organic Transistors
6.4 Conclusions and Outlook
References
Part II: Manufacturing
Chapter 7: Printing Techniques for Thin-Film Electronics
7.1 The Motivation for Printing of Thin-Film Electronic Devices
7.2 Requirements for Printing Techniques for Electronics Fabrication
7.3 A Survey of Printing Techniques for Printed Electronics
7.4 Pattern Formation During Printing
7.5 Printed Device Considerations
References
Chapter 8: Picoliter and Subfemtoliter Ink-jet Technologies for Organic Transistors
8.1 Introduction
8.2 Silver Nanoparticle Ink
8.3 Ink-jet Technologies with Pico- and Subfemtoliter Accuracies
8.4 Manufacturing Processes and Electrical Characteristics of Organic Transistors
8.5 Discussion and Future Prospects of Large-Area Printed Electronics
Acknowledgments
References
Chapter 9: Ink-Jet Printing of Downscaled Organic Electronic Devices
9.1 Introduction
9.2 Ink-Jet Printing: Technologies, Tools, and Materials
9.3 High-Resolution Printing of Highly Conductive Electrodes
9.4 Printing of Downscaled Organic Thin Film Transistors
9.5 Conclusions and Outlook
Acknowledgments
References
Chapter 10: Interplay between Processing, Structure, and Electronic Properties in Soluble Small-Molecule Organic Semiconductors
10.1 Introduction
10.2 Transport Limits in Crystalline Semiconductors
10.3 Structure–Processing–Properties Relationship in Small-Molecule Organic Thin-Film Transistors
10.4 Advanced Film Processing
10.5 Summary
References
Part III: Applications
Chapter 11: Light-Emitting Organic Transistors
11.1 Introduction
11.2 Unipolar Light-Emitting FETs
11.3 Ambipolar Light-Emitting FETs
11.4 Other Field-Effect-Based Light-Emitting Devices
11.5 Conclusions
Acknowledgments
References
Chapter 12: Design Methodologies for Organic RFID Tags and Sensor Readout on Foil
12.1 Introduction
12.2 Organic RFID Tags
12.3 Transistor-Level Design with Organic Transistors
12.4 Conclusions
Acknowledgments
References
Index
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The Editor
Dr. Hagen Klauk
Max Planck Institute for Solid
State Research
Heisenbergstr. 1
70569 Stuttgart
Germany
Cover
The Cover was provided by Huai-Yuan Tseng working in the group of Vivek Subramanian at the University of California, Berkeley.
It shows an optical micrograph of a selfaligned organic transistor manufactured entirely by inkjet printing.
Back Cover
The structure on the back cover was kindly provided by John Anthony.
All books published by Wiley-VCH are carefully produced. Nevertheless, authors, editors, and publisher do not warrant the information contained in these books, including this book, to be free of errors. Readers are advised to keep in mind that statements, data, illustrations, procedural details or other items may inadvertently be inaccurate.
Library of Congress Card No.: applied for
British Library Cataloguing-in-Publication Data
A catalogue record for this book is available from the British Library.
Bibliographic information published by the Deutsche Nationalbibliothek
The Deutsche Nationalbibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data are available on the Internet at <http://dnb.d-nb.de>.
© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Boschstr. 12, 69469 Weinheim, Germany
All rights reserved (including those of translation into other languages). No part of this book may be reproduced in any form – by photoprinting, microfilm, or any other means – nor transmitted or translated into a machine language without written permission from the publishers. Registered names, trademarks, etc. used in this book, even when not specifically marked as such, are not to be considered unprotected by law.
ISBN: 978-3-527-32647-1
ePDF: 978-3-527-64023-2
oBook: 978-3-527-64021-8
ePub: 978-3-527-64022-5
Mobi: 978-3-527-64024-9
Preface
Organic Electronics is not only a fascinating field of research and development, but also one that continues to move ahead at a swift pace. And thus six years after the first installment of this book series (Organic Electronics – Materials, Manufacturing, and Applications, Wiley-VCH, 2006) it was time for an update. The 12 chapters of the sequel provide a detailed look at some important new developments and advancements in the field of organic thin-film transistors, including novel semiconductors for p-channel and n-channel organic transistors, advanced thin-film characterization techniques, new insights into charge transport in organic semiconductors, research into low-voltage electrolyte-gated transistors, solution-processing techniques and high-resolution printing approaches for the manufacture of organic transistors, the science and technology of organic light-emitting transistors, and advanced design strategies for large-scale organic integrated circuits.
Once again, I am deeply indebted to the many professionals who have contributed to this book. First and foremost I would like to extend my sincere gratitude to the 42 authors who have taken time out of their busy schedules to share their wisdom and knowledge. Second I want to thank Martin Preuss, Bernadette Gmeiner, and Bente Flier at Wiley-VCH for the encouragement and organizational oversight to make this book happen. And finally my thanks go out to the readers of both the first and second book of this series for their interest.
Stuttgart, 2011
Hagen Klauk
List of Contributors
Part I
Materials
Chapter 1
Organic Semiconductor Materials for Transistors
David Ian James, Jeremy Smith, Martin Heeney, Thomas D. Anthopoulos, Alberto Salleo, and Iain McCulloch
1.1 General Considerations
Recent advances in the electrical performance of organic semiconductor materials position organic electronics as a viable alternative to technologies based on amorphous silicon (a-Si). Traditionally a-Si-based transistors, which are used as the switching and amplifying components in modern electronics [1], require energy intensive batch manufacturing techniques. These include material deposition and patterning using a number of high-vacuum and high-temperature processing steps in addition to several subtractive lithographic patterning and mask steps, limiting throughput. Although this allows for the cost of individual transistors to be extremely low because of the high circuit density that can be obtained, the actual cost per unit area is very high. Alternatively, organic semiconductors can be formulated into inks and processed using solution-based printing processes [2–5]. This allows for large-area, high-throughput, low-temperature fabrication of organic field-effect transistors (OFETs), enabling not only a reduction in cost but also the migration to flexible circuitry, as lower temperatures enable the use of plastic substrates. The potential applications for these OFETs are numerous, ranging from flexible backplanes in active matrix displays to item-level radiofrequency identification tags.
OFETs are typically p-type (hole transporting) devices that are composed of a source and drain electrode connected by an organic semiconductor, with a gate electrode, insulated from the organic semiconductor via a dielectric material, as shown in Figure 1.1b. Holes are injected into the highest occupied molecular orbital (HOMO) of the organic semiconductor upon application of a negative gate voltage. The holes migrate to the accumulation layer, which forms at the semiconductor interface with the dielectric, and are transported between the source and drain upon application of an electric field between the two. Modulation of the gate voltage is used to turn the transistor ON and OFF, with the ON current and voltage required to turn the device on being figures of merit for the electrical performance of the device. The performance of the transistor is also governed by the charge carrier mobility of the semiconductor, which should be high to ensure fast charging speeds.
Figure 1.1 (a) Simple diagram of active matrix backplane circuitry and (b) cross section of corresponding TFT and pixel architecture.
In displays, OFETs can act as individual pixel switches in the backplane active matrix circuitry, as shown in Figure 1.1a. This technology is currently being used commercially in small-sized electrophoretic displays (EPDs), marketed as e-paper [6], to charge both the pixel and the storage capacitor. Active matrix backplanes are found in both liquid crystal displays (LCDs) and organic light emitting diode (OLED) displays, where a transistor also provides current to the emitting diode element. An advantage of the EPD effect is that the pixels are reflective to ambient light, which allows the pixel transistor to occupy the majority of the area underneath the pixel. This maximizes the transistor width, enabling more current to be delivered to the pixel, resulting in lower mobility specifications being required from the semiconductor. For small-sized devices (10 cm diagonally) with low resolutions and low refresh rates, the mobility required is in the region of 0.01 cm2 V−1 s−1, which is well within the capabilities of both polymer and small molecule semiconductors. In comparison, medium- to large-sized LCDs commonly used for monitor and television displays require semiconductor mobilities in excess of 0.5 cm2 V−1 s−1, and currently employ a-Si or polysilicon for higher-resolution displays. EPDs are also bistable, as once the pixel and the storage capacitor are charged, no additional power is needed to maintain the image. This minimizes the duty cycle load of the transistor, thus extending the lifetime. One problem with EPDs is that it is possible for ionic impurities within the liquid EPD cell to facilitate current leakage from the capacitor, which means that higher charge carrier mobilities are required than would be expected and thus high-purity electrophoretic inks are required to reduce the current demands of the display effect.
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