Field Effect Transistors, A Comprehensive Overview E-Book

Pouya Valizadeh

• Herausgeber: John Wiley & Sons
• Kategorie: Wissenschaft und neue Technologien
• Sprache: Englisch

Seitenzahl: 893

Veröffentlichungsjahr: 2016

Beschreibung

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices.

This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales.

• Links the discussion of contemporary transistor devices to physical processes
• Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author
• Contains examples and end-of-chapter problems

Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs.

Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Leseprobe

Table of Contents

COVER

TITLE PAGE

INTRODUCTION

1 ELECTRONIC MATERIALS AND CHARGE TRANSPORT

1.1 WAVE/PARTICLE ELECTRONS IN SOLIDS

1.2 ELECTRONS, HOLES, AND DOPING IN SEMICONDUCTORS

1.3 THERMAL-EQUILIBRIUM STATISTICS

1.4 CHARGE-CARRIER TRANSPORT IN SEMICONDUCTORS

1.5 BREAKDOWN IN SEMICONDUCTORS

1.6 CRYSTALLINITY AND SEMICONDUCTOR MATERIALS

1.7 QUANTUM TRANSPORT PHENOMENA AND SCATTERING MECHANISMS IN SEMICONDUCTORS

FURTHER READING

SOLID-STATE THEORY

PHYSICS OF SEMICONDUCTOR DEVICES

SEMICONDUCTOR MATERIALS AND HETEROSTRUCTURES

PROBLEMS

APPENDIX 1.A DERIVATION OF

FERMI–DIRAC

STATISTICS

FURTHER READING

APPENDIX 1.B DERIVATION OF EINSTEIN RELATIONSHIP IN DEGENERATE SEMICONDUCTORS

FURTHER READING

APPENDIX 1.C STRAIN TENSOR

2 JUNCTIONS

2.1 CONTACTS UNDER THERMAL EQUILIBRIUM

2.2 METAL–SEMICONDUCTOR CONTACTS

2.3

P–N

JUNCTIONS

2.4 METAL–INSULATOR–SEMICONDUCTOR SYSTEM

2.5 CURRENT CONDUCTION IN THE PRESENCE OF BAND DISCONTINUITIES IN JUNCTIONS

FURTHER READING

PHYSICS OF SEMICONDUCTOR DEVICES

PROBLEMS

APPENDIX 2.A LIMITATIONS OF

SDA

AND THE MEANING OF DEBYE LENGTH

3 TRADITIONAL PLANAR MOSFETs

3.1 BATTLE OF TRANSISTORS: MOSFET VERSUS BJT

3.2 PRINCIPLES OF OPERATION OF MOSFETs AND DEVICE MODELING: FIRST-ORDER PRINCIPLES

3.3 QUANTUM CONFINEMENT AND ELECTROSTATICS OF MOSFET

3.4 SUBTHRESHOLD OPERATION OF SHORT-CHANNEL MOSFET

3.5 LIMITS OF SCALING: A RECAP

REFERENCE

FURTHER READING

PHYSICS OF SEMICONDUCTOR DEVICES

MICROFABRICATION TECHNOLOGY AND MATERIAL CHARACTERIZATION

PROBLEMS

4 FROM SCALING-DRIVEN TECHNOLOGICAL VARIATIONS TO NOVEL DIMENSIONS IN MISFETs

4.1

FinFET

,

UTBSOI

, AND OTHER MULTIPLE-GATE

FETs

4.2 VELOCITY-MODULATION TRANSISTOR

4.3 RESONANT-GATE AND RESONANT-CHANNEL TRANSISTORS

4.4 CARBON NANOTUBE

FET

AND

FETs

REALIZED ON OTHER NANOTUBE AND NANOWIRES

4.5

spinFET

REFERENCES

FURTHER READING

PROBLEMS

5 HETEROJUNCTION FETs

5.1 CHALLENGES AND REWARDS OF HETEROEPITAXY

5.2 QUANTUM PHENOMENA IN SEMICONDUCTOR HETEROSTRUCTURES

5.3 HFET: BRIEF EXPOSÉ OF DESIGN INTRICACIES

5.4 POLAR III-NITRIDE

HFET

REFERENCES

FURTHER READING

PHYSICS OF HETEROSTRUCTURES AND HIGH-SPEED TRANSISTORS

MATERIAL PROPERTIES AND PROCESSING OF SEMICONDUCTOR MATERIALS AND HETEROSTRUCTURES

PROBLEMS

6

FETs

AT MOLECULAR SCALES

6.1

FET

: A CHANGE OF PARADIGM

6.2 RESISTANCE REDEFINED

6.3 EVALUATION OF CURRENT–VOLTAGE CHARACTERISTICS OF A SINGLE ENERGY-LEVEL CHANNEL

FET

6.4 FROM CURRENT CONDUCTION IN SINGLE ENERGY-LEVEL CHANNELS TO DEFINITION OF CONDUCTANCE IN MACROSCALE CONDUCTORS

FURTHER READING

INDEX

END USER LICENSE AGREEMENT

List of Tables

Chapter 01

TABLE 1.1 Energy Range of Interest in the Band Structure of Semiconductor for Understanding the Behavior of Various Electronic Devices and under Different Conditions

TABLE 1.2 The Temperature Dependence of the Size of the

Bandgap

of a Number of Important Semiconductors

TABLE 1.3 List of Ionization Energies for a Number of Important Impurities in Si, Ge, GaAs, InP, and GaN

TABLE 1.4 A Number of Important Properties of Si, Ge, GaAs, and GaN at Room Temperature

TABLE 1.5 A Summary of Important Transport Properties of Si and GaAs

TABLE 1.6 The Fourteen 3-D Lattice Types

TABLE 1.7 Summary of the Characteristics of Cubic Lattice Types

Chapter 02

TABLE 2.1 Summary of the Biasing Scenarios of an

MIS S

ystem Made to a p-Type Semiconductor

TABLE 2.2 Summary of the Observations Made on the

C–V

Characteristics of an

MIS

System for

V

MS

beyond the Onset of Strong Inversion

TABLE 2.3 The Basic Conduction Processes Encountered across the Insulators along with Their Temperature and Voltage Dependences

Chapter 03

TABLE 3.1 Values of the Parameters of the Empirical Expression (3.24).

List of Illustrations

Chapter 01

FIGURE 1.1 (a) A 2-D confining quantum well. (b) A 1-D confining quantum wire.

FIGURE 1.2 (a) A simplified typically observed

E–k

diagram among a number of semiconductors. As will be indicated shortly, in this diagram

E

c

and

E

v

mark the bottom of the conduction and the top of the valence band and

E

g

represents the size of the forbidden gap of energy. (b) A 1-D representation of the bandgap. (c) The 2-D band diagram.

FIGURE 1.3 (a) Typical form of the density of states function in a 3-D semiconductor. (b) Typical form of the

DOS

function in a quantum well. (c) Typical form of the

DOS

function in a quantum wire.