Advanced Topological Insulators E-Book
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- Herausgeber: John Wiley & Sons
- Kategorie: Wissenschaft und neue Technologien
- Sprache: Englisch
Advanced Topological Insulators provides researchers and graduate students with the physical understanding and mathematical tools needed to embark on research in this rapidly evolving field.
Topological insulators is one of the most exciting areas of research in condensed matter physics. Topological insulators are materials with nontrivial symmetry-protected topological order that behaves as insulators in their interior but whose surface contains conducting states, meaning that electrons can only move along the surface of the material.
During the past decade, myriad reliable theoretical and experimental data have been accumulated on topological insulators. The time is now right to gather together this information into a handbook to make it readily available for researchers and students preparing to work in this area of condensed matter physics, quantum information and materials science. Presenting the latest developments, this book covers most introductory experiments and applications in topological insulators and provides a foundation for understanding the field.
Some of the topics covered in this groundbreaking book are:
- Shows how to use topological insulator materials for advanced optoelectronic devices.
- Explains what topological insulator thin films and artificial topological superconductors are.
- Discusses dimensional crossover of topological properties in thin films of topological insulators (TI) and Weyl semimetals, electronic properties on the surface of TI nanoparticles and TI nanowires as a constrained electronic system. The effects of disorder are also highlighted.
- Demonstrates that a purely local interaction can cause topological transitions by renormalizing kinetic energy terms alone, without phase transitions associated with order parameters. Disorder is also a means of changing the topology of Chern insulators as it localizes every state except for those carrying the topological invariant.
- Presents two Q-switched Erbium-doped fiber lasers utilizing topology insulators as a saturable absorber.
- Introduces several statistical aspects related to the critical phenomena of topological phase transitions.
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Veröffentlichungsjahr: 2019
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Contents
Cover
Title page
Copyright page
Preface
Chapter 1: Characterization of Phase Transition Points for Topological Gapped Systems
1.1 Introduction
1.2 General Definition of Topological Invariant of Phase Transition Points
1.3 Phase Transition Points of One-Dimensional Systems
1.4 Phase Transition Points of Two-Dimensional Systems
1.5 An Example of 3D Topological Insulators
References
Chapter 2: Topological Insulator Materials for Advanced Optoelectronic Devices
2.1 Excellent Electronic Properties
2.2 Excellent Optical Properties
2.3 Advanced Optoelectronic Devices
2.4 Conclusion and Outlook
References
Chapter 3: Topological Insulator Thin Films and Artificial Topological Superconductors
3.1 Theoretical Background
3.2 Introduction of the Experimental Methods
3.3 Topological Insulator Thin Films
3.4 Artificial Two-Dimensional Topological Superconductor
3.5 Discovery of Majorana Zero Mode
6 Summary
Acknowledgements
References
Chapter 4: Topological Matter in the Absence of Translational Invariance
4.1 Introduction
4.2 Topological Insulator and Real-Space Topology
4.3 Layer Construction: Dimensional Crossovers of Topological Properties
4.4 Effects of Disorder
4.5 Critical Properties of Topological Quantum Phase Transitions
4.6 Phase Diagrams Obtained from Machine Learning
4.7 Summary and Concluding Remarks
References
Chapter 5: Changing the Topology of Electronic Systems Through Interactions or Disorder
5.1 Introduction
5.2 Change of an Insulator’s Topological Properties by a Hubbard Interaction
5.3 Effects of Disorder on Chern Insulators
5.4 Topological Superconductors
5.5 Conclusions
5.6 Acknowledgements
References
Chapter 6: Q-Switching Pulses Generation Using Topology Insulators as Saturable Absorber
6.1 Introduction
6.2 Fiber Laser Technology
6.3 Topology Insulator (TI)
6.4 Pulsed Laser Parameters
6.5 Bi
2
Se
3
Material as Saturable Absorber in Passively Q-Switched Fiber Laser
6.6 Q-Switched EDFL with Bi
2
Te
3
Material as Saturable Absorber
6.7 Conclusion
References
Chapter 7: Topological Phase Transitions: Criticality, Universality, and Renormalization Group Approach
7.1 Generic Features Near Topological Phase Transitions
7.2 Topological Invariant in 1D Calculated from Berry Connection
7.3 Topological Invariant in 2D Calculated From Berry Curvature
7.4 Universality Class of Higher Order Dirac Model
7.5 Topological Invariant in D-Dimension Calculated From Pfaffian
7.6 Summary
References
Chapter 8: Behaviour of Dielectric Materials Under Electron Irradiation in a SEM
8.1 Introduction
8.2 Fundamental Aspects of Electron Irradiation of Solids
8.3 Electron Emission of Solid Materials
8.4 Electron Emission of Solid Materials
8.5 Trapping and Charge Transport in Insulators
8.6 Application: Dynamic Trapping Properties of Dielectric Materials Under Electron Irradiation
8.7 Conclusion
References
Chapter 9: Photonic Crystal Fiber (PCF) Is a New Paradigm for Realization of Topological Insulator
9.1 Introduction
9.2 Structure of Photonic Crystal Fiber
9.3 Result and Discussion
9.4 Conclusion
References
Chapter 10: Patterned 2D Thin Films Topological Insulators for Potential Plasmonic Applications
10.1 Introduction
10.2 Fundamentals of Plasmons
10.3 Plasmons at Structured Surfaces
10.4 Nanostructured Thin Films and Its Applications
10.5 Summary
References
Index
Also of Interest
End User License Agreement
Guide
Cover
Copyright
Table of Contents
Begin Reading
List of Tables
Chapter 1
Table 1.1
Ten-fold way symmetry classes, classified in terms of the presence or absence of...
Chapter 4
Table 4.1
Wigner-dyson classification [60, 77] According to the presence/absence of the time...
Table 4.2
Scaling relations in the semimetal-metal transition at...
Table 4.3
Critical behaviors of the Anderson transition....
Table 4.4
Comparison of the Anderson metal-insulator (M-I) transition and the semimetal-metal...
Chapter 6
Table 6.1
Rare-earth ions with common host glasses and emission wavelength ranges....
Chapter 7
Table 7.1
Summary of the critical behavior of various quantities in a 2d 2 × 2 dirac...
Chapter 8
Table 8.1
Calculated penetration depth Z
m
using Kanaya-Okayam expression, the...
Table 8.2
Trapped charge Q
S
and time constant T recorded on PET polymer at the...
Table 8.3
The parameters used for the calculation of the trapping cross section....
Table 8.4
Trapped charge, surface potential, leakage current...
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Scrivener Publishing 100 Cummings Center, Suite 541J Beverly, MA 01915-6106
Publishers at Scrivener Martin Scrivener ([email protected]) Phillip Carmical ([email protected])Managing Editors: George Mishra and Anshuman Mishra
Advanced Topological Insulators
Edited by
Huixia Luo
School of Materials Science and Engineering, Sun Yat-Sen University, China
This edition first published 2019 by John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, USA and Scrivener Publishing LLC, 100 Cummings Center, Suite 541J, Beverly, MA 01915, USA © 2019 Scrivener Publishing LLC For more information about Scrivener publications please visit www.scrivenerpublishing.com.
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Library of Congress Cataloging-in-Publication Data
ISBN 978-1-119-40729-4
Preface
Topological insulators are one of the most exciting areas of research in condensed matter physics. Topological insulators are materials with nontrivial symmetry-protected topological order that behaves as insulators in their interior but whose surface contains conducting states, meaning that electrons can only move along the surface of the material. The underlying cause is time-reversal symmetry: their physics is independent of whether time is flowing backward or forward. These surface states are robust, maintained even in the presence of surface defects. In the bulk of a non-interacting topological insulator, the electronic band structure resembles an ordinary band insulator, with the Fermi level falling between the conduction and valence bands. On the surface of a topological insulator there are special states that fall within the bulk energy gap and allow surface metallic conduction. Carriers in these surface states have their spin locked at a right-angle to their momentum (spin-momentum locking).
During the past decade, myriad reliable theoretical and experimental data have been accumulated on topological insulators. The time is now right to gather together this information into a handbook to make it readily available for researchers and students preparing to work in this area of condensed matter physics, quantum information and materials science. Presenting the latest developments, this book covers most introductory experiments and applications in topological insulators and provides a foundation for understanding the field.
The book begins with the characterization of phase transition points for topological insulating systems. In chapter 1 reviews the studies of topological properties of phase transition points of topological quantum phase transitions by assigning a topological invariant defined for these points. It moves on to show how to use topological insulator materials for advanced optoelectronic devices in chapter 2. The focus is on the excellent electronic and optical properties of topological insulator materials and their wide applications in advanced optoelectronic devices. Chapter 3 explains what topological insulator thin films and artificial topological superconductors are. It discuss the experimental results on topological insulator thin films and two-dimensional topological superconductor based on two prototypical materials, Bi2Se3 and Bi2Te3. Atomically-precisely controlled growth was realized in Bi2Se3 and Bi2Te3 single crystalline thin films by molecular beam epitaxy, furthermore the minimum thicknesses which maintain the topology of these materials were experimentally determined. Chapter 4 introduces the topological matter in the absence of translational invariance. Dimensional crossover of topological properties in thin films of topological insulators (TI) and Weyl semimetals, electronic properties on the surface of TI nanoparticles and TI nanowires as a constrained electronic system are discussed. The effects of disorder are also highlighted.
Chapter 5 shows that a purely local interaction can cause topological transitions by renormalizing kinetic energy terms alone, without phase transitions associated with order parameters. Disorder is also a mean of changing the topology of Chern insulators, as it localizes every state except for those carrying the topological invariant. With increasing disorder, states with opposite topological invariant meet and annihilate. But considering the sub-lattice degree of freedom, Chern insulators may evade localization: an anomalous Hall metal may be stabilized with strong disorder in one sublattice, while the disorder in the other sublattice remains below some critical value. Chapter 6 presents two Q-switched Erbium-doped fiber lasers utilizing topology insulators as a saturable absorber. Two different passively Q-switched Erbium-doped fiber lasers are demonstrated using a few-layers Bi2Se3 and Bi2Te3 based saturable absorbers to exploit the wideband saturable-absorption characteristic of the topology insulators. Chapter 7 introduces several statistical aspects related to the critical phenomena of topological phase transitions. The concept is based on the observation that a curvature function used to calculate topological invariants diverges at where the band gap closes as the system approaches a topological phase transition. Introducing a renormalization group procedure for the curvature function, scale invariance allows us to characterize the topological phases and to define in a natural way a correlation function based on the Wannier functions. Similar to the standard critical behavior we can define critical exponents and universality classes. We will demonstrate the generality of these aspects by applying it to a number of systems in different dimensions and symmetry classes. The volume ends with 3 applications chapters on “Behavior of Dielectric Materials Under Electron Irradiation in a SEM”; “Photonic Crystal Fiber (PCF) Is a New Paradigm for Realization of Topological Insulator”; and “Patterned 2D Thin Films Topological Insulators for Potential Plasmonic Applications”.
It is hoped that the data tabulations and other information gathered together in this book will have a significant influence on expediting the progress of future research.
I would like to express my gratitude to all the contributors for their collective and fruitful work. It is their efforts and expertise that have made this book comprehensive, valuable and unique. I am also grateful to the managing editors, the International Association of Advanced Materials and publisher for their help and useful suggestions in preparing the “Advanced Topological Insulators.”
Huixia LuoDecember 2018
