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- Herausgeber: John Wiley & Sons
- Kategorie: Wissenschaft und neue Technologien
- Sprache: Englisch
At the end of the Second World War, a new technological trend was born: integrated electronics. This trend relied on the enormous rise of integrable electronic devices. Analog Devices and Circuits is composed of two volumes: the first deals with analog components, and the second with associated analog circuits. The goal here is not to create an overly comprehensive analysis, but rather to break it down into smaller sections, thus highlighting the complexity and breadth of the field. This first volume, after a brief history, describes the two main devices, namely bipolar transistors and MOS, with particular importance given to the modeling aspect. In doing so, we deal with new devices dedicated to radio frequency, which touches on nanoelectronics. We will also address some of the notions related to quantum mechanics. Finally, Monte Carlo methods, by essence statistics, will be introduced, which have become more and more important since the middle of the twentieth century. The second volume deals with the circuits that "use" the analog components that were introduced in Volume 1. Here, a particular emphasis is placed on the main circuit: the operational amplifier.
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Seitenzahl: 168
Veröffentlichungsjahr: 2024
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Table of Contents
Cover
Table of Contents
Title Page
Copyright Page
Preface
Acknowledgments
Introduction
I.1. Synoptic history of microelectronics
I.2. Computer-aided design
I.3. Manufacturing: technological processes, diffusions: brief reminders
1.4. PN junction
1 Bipolar Junction Transistor
1.1. Introduction
1.2. Transistor effect
1.3. Bipolar junction transistor: some calculations
1.4. The NPN transistor; Ebers–Moll model (1954: Jewell James Ebers and John L. Moll)
1.5. Simple bipolar junction transistor model
1.6. Network of static characteristics of the bipolar junction transistor
1.7. Some applications
1.8. Application: operational amplifier
1.9. BiCMOS
2 MOSFET
2.1. Introduction
2.2. MOS capability: electric model and curve C(V)
2.3. Different types of MOS transistors
2.4. A CMOS technological process
2.5. Electric modeling of the NMOS enhancement transistor
2.6. Off state
2.7. Linear or ohmic or unsaturated regime
2.8. Applications
2.9. Explained technological steps of a CMOS
3 Devices Dedicated to Radio Frequency: Toward Nanoelectronics
3.1. Introduction
3.2. Model for HBT SiGeC and device structure
3.3. MOS of the future?
3.4. Conclusion
3.5. MATLAB use
3.6. Conclusion
Appendix
A.1. Monte Carlo method
A.2. Summary
A.3. Introduction
A.4. Monte Carlo method applied to electronic transport: semiconductor modeling
A.5. Influence of the magnetic field on the movement of electrons
References
Index
Other titles from ISTE in Electronics Engineering
End User License Agreement
List of Tables
Introduction
Table I.1. Process modeling
Chapter 2
Table 2.1. Capacitance depending on operation mode
Table 2.2. NMOS and PMOS
Table 2.3. I
D
(V
DS
)
Table 2.4. Transconductances versus electric regimes
Table 2.5. Drain current electric models of NMOS and PMOS transistors
Guide
Cover
Table of Contents
Title Page
Copyright Page
Preface
Introduction
Begin Reading
Appendix
References
Index
Other titles from ISTE in Electronics Engineering
End User License Agreement
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Analog Devices and Circuits 1
Analog Devices
Christian Gontrand
First published 2023 in Great Britain and the United States by ISTE Ltd and John Wiley & Sons, Inc.
Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address:
ISTE Ltd27-37 St George’s RoadLondon SW19 4EUUKwww.iste.co.uk
John Wiley & Sons, Inc.111 River StreetHoboken, NJ 07030USAwww.wiley.com
© ISTE Ltd 2023The rights of Christian Gontrand to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988.
Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s), contributor(s) or editor(s) and do not necessarily reflect the views of ISTE Group.
Library of Congress Control Number: 2023942763
British Library Cataloguing-in-Publication DataA CIP record for this book is available from the British LibraryISBN 978-1-78630-899-3
Preface
At the end of the Second World War, a new technological trend was born: integrated electronics. The latter relied on the enormous rise of integrable electronic devices; this field has invaded our societies.
In fact, electronics dates back to the beginning of the 20th century. Lee de Forest invented the triode in 1907. However, the first reliable tubes did not appear until the middle of the last century.
The frequency of these tubes increased in the late 1950s.
Solid-state physics, apart from galenic detectors and dry rectifiers, began at the beginning of the 1930s, with regard to the theoretical aspects (see Bloch (1929) and Wilson (1931)). At the end of December 1947, John Bardeen, Walter Houser Brattain (founders) and William Bradford Shockley (theorist, somewhat “founded” elsewhere) presented the first bipolar transistor to their colleague at (Ma) Bell Telephone in 1947. Over the past 20 years, huge technological advances have improved performance in terms of frequency, power and heat, with cost prices falling concomitantly. Then, links between research, development and productivity became very strong, with physicists and technologists tending to be confused for the other, both being material specialists, and the device, the circuit and the system forming the same ad hoc body. In the 1970–1980 decade, another field – numerical modeling and simulations – appeared; at the beginning of this decade, numerical mathematicians were curious guests at “brainstorming” meetings. At the end of this decade, they became full-fledged collaborators. In this case, with modeling being reliable and simulations robust, industrialists quickly realized their advantages, particularly in terms of cost, avoiding, among other things, the need to build demonstrators, to “miss” some technological step, leading to a whole series of wafers becoming “rubbish”.
Moreover, on the pedagogical side, it contributes a lot to the understanding of physical and electrical phenomena, making it possible to carry out “numerical experiments”, avoiding “breakage” in real devices and circuits. A new field has emerged in recent years: artificial intelligence, making it possible to make discoveries, often in heuristic form, using a large amount of data. Currently, we can talk about vertical artificial intelligence (AI), improving, refining, some diagnosis. It is surely “horizontal” AI that will revolutionize our lives. Robots or software will surely succeed in linking phenomena that seem, a priori, disjointed, perhaps succeeding in emulating human reasoning, or even the famous intuition that arises in the brains of the greatest scientists. We may then be inclined to accept that the theory of Charles Darwin (and Alfred Russel Wallace) continues to evolve, especially in our field of interest. But that is another story…
This book consists of two volumes: one deals with analog devices and the second deals with associated analog circuits. It is the substrate of two master courses, for example, DEA – Advanced Studies Degree (current Master 2) – taught under three establishments: Ecole Centrale, Institut National des Sciences Appliquées (National Institute of Applied Sciences), Chemistry, Physics, and Electronics (Chemistry and Digital Sciences), of the University of Lyon. Former students, having since set up shop in the industry, asked to transform related handouts into a book, in particular because the current training perhaps favors the qualitative over the quantitative too much. Note, of course, the existence of sums, most of them by yankees. Therefore, the aim here is not to carry out an exhaustive processing, but rather to work with key points, highlighting the complexity of the field, by focusing on certain major points, with a necessity of compromise which makes the field of microelectronics all the richer and more exciting. A lecturer post was then created at the end of the 1980s, because of the creation of the Centre Interuniversitaire de MIcroélectronique de la Région LYonnaise (CIMIRLY).
I would like to thank some of my colleagues, most often former doctoral students, master’s students, or fifth year students of engineering; the list is not exhaustive: Saïda Latreche, Maya Lakhdara, Samir Labiod, Bruno Villard, Iulian Gradinariu, Fengyuan Sun, Anne Gérodolle, Serge Martin, Daniel Mathiot, Alain Chantre, Pascal Chevalier, Bruno Villard, Daniel Barbier, Drissi Fayçal, Filali Omar, Marc Buffat, Francis Calmon, Jacques Verdier, Pierre-Jean Viverge, Mohamed Abouelatta, Yue Ma, Christian Andrei, Olivier Valorge, Florent Miller, Rabah Dahmani, Rachid Benslimane, Alain Poncet, Michel Le Helley, Jean-Pierre Chante, Geoffroy Klisnick, Jean-Claude Vaissière, Daniel Gasquet and Jean-Pierre Nougier.
Acknowledgments
The author would like to thank the Université de Lyon, Institut National des Sciences Appliquées, Union for the Mediterranean (UfM), and Euromed University of Fes (UEMF) for supporting the study.
August 2023
Introduction
I.1. Synoptic history of microelectronics
I.1.1. Electricity: Ampere, Coulomb, Faraday, Gauss, Henry, Kirchkoff, Maxwell and Ohm
– 1826: Ohm’s law (G.S. Ohm);
– 1837: S. Morse (New York) → Telegraph: binary signals: dot-dash:
- W. Thomson and C. Wheastone;
– 1865: J.C. Maxwell → Electromagnetism:
- H. Hertz → Production of electromagnetic waves in the laboratory;
– 1876: A.G. Bell → Telephone;
– 1877: T. Edison → Phonograph (disc: First ROM);
– 1996: G. Marconi → Wireless phone: radio waves (~ km).
I.1.2. Vaccum tube
– 1895: H.A. Lorentz → Electron (< Greek: amber); discrete charges;
– 1897: J.J. Thomson → Experiment → Existence of electrons:
- K. Braun: cathode ray tube; first electron tube;
– 1904: A. Fleming → Invention of the diode (tube) → detector;
– 1905: A. Einstein, H.A. Lorentz, H. Poincaré → Special relativity: intrinsic to electromagnetism;
– 1906: G.W. Pickard → Silicon crystal (Si) detector with whiskers:
- poor reliability because of spikes;
– 1906: L. de Forest → Audion triode (diode + gate: ancestor of the transistor): first controlled source.
