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Duixian Liu

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A comprehensive guide to antenna design, manufacturing processes, antenna integration, and packaging Antenna-in-Package Technology and Applications contains an introduction to the history of AiP technology. It explores antennas and packages, thermal analysis and design, as well as measurement setups and methods for AiP technology. The authors--well-known experts on the topic--explain why microstrip patch antennas are the most popular and describe the myriad constraints of packaging, such as electrical performance, thermo-mechanical reliability, compactness, manufacturability, and cost. The book includes information on how the choice of interconnects is governed by JEDEC for automatic assembly and describes low-temperature co-fired ceramic, high-density interconnects, fan-out wafer level packaging-based AiP, and 3D-printing-based AiP. The book includes a detailed discussion of the surface laminar circuit-based AiP designs for large-scale mm-wave phased arrays for 94-GHz imagers and 28-GHz 5G New Radios. Additionally, the book includes information on 3D AiP for sensor nodes, near-field wireless power transfer, and IoT applications. This important book: * Includes a brief history of antenna-in-package technology * Describes package structures widely used in AiP, such as ball grid array (BGA) and quad flat no-leads (QFN) * Explores the concepts, materials and processes, designs, and verifications with special consideration for excellent electrical, mechanical, and thermal performance Written for students in electrical engineering, professors, researchers, and RF engineers, Antenna-in-Package Technology and Applications offers a guide to material selection for antennas and packages, antenna design with manufacturing processes and packaging constraints, antenna integration, and packaging.

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IEEE Press

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Ekram Hossain, Editor in Chief

 

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Andreas Molisch

                    

Diomidis Spinellis

David Alan Grier

Saeid Nahavandi

Elya B. Joffe

Donald Heirman

Ray Perez

Sarah Spurgeon

Xiaoou Li

Jeffrey Reed

Ahmet Murat Tekalp

Antenna-in-Package Technology and Applications

 

 

Edited by

Duixian Liu

IBM Thomas J. Watson Research CenterNew York, USA

 

Yueping Zhang

School of Electrical and Electronic EngineeringNanyang Technological University, Singapore

 

 

 

 

 

 

 

Copyright © 2020 by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.

Published by John Wiley & Sons, Inc., Hoboken, New Jersey.Published simultaneously in Canada.

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Library of Congress Cataloging‐in‐Publication data applied for

ISBN: 9781119556633

Cover Design: WileyCover Image: © windwheel/Shutterstock

List of Contributors

 

Yueping Zhang

School of Electrical and Electronic Engineering

Nanyang Technological University

Singapore

 

Ning Ye

Package Technology Development & Integration

Milpitas

USA

 

Xiaoxiong Gu

Thomas. J. Watson Research Center, IBM

New York

USA

 

Pritish Parida

Thomas. J. Watson Research Center, IBM

New York

USA

 

A.C.F. Reniers

Department of Electrical Engineering

Eindhoven University of Technology (TU/e)

Eindhoven

The Netherlands

 

U. Johannsen

Department of Electrical Engineering

Eindhoven University of Technology (TU/e)

Eindhoven

The Netherlands

 

A.B. Smolders

Department of Electrical Engineering

Eindhoven University of Technology (TU/e)

Eindhoven

The Netherlands

 

Atif Shamim

Computer, Electrical and Mathematical Sciences and Engineering Division

King Abdullah University of Science & Technology (KAUST)

KSA

 

Haoran Zhang

Computer, Electrical and Mathematical Sciences and Engineering Division

King Abdullah University of Science & Technology (KAUST)

KSA

 

Frédéric Gianesello

ST Microelectronics

Technology R&D

Silicon Technology Development

Crolles

France

 

Diane Titz

Université Nice Sophia Antipolis

Polytech'Lab

Biot

France

 

Cyril Luxey

Université Nice Sophia Antipolis

Polytech'Lab

Biot

France

 

Maciej Wojnowski

Infineon Technologies AG

Neubiberg

Germany

 

Klaus Pressel

Infineon Technologies AG

Regensburg

Germany

 

Tong‐Hong Lin

The School of Electrical and Computer Engineering

Georgia Institute of Technology

Atlanta

USA

 

Ryan A. Bahr

The School of Electrical and Computer Engineering

Georgia Institute of Technology

Atlanta

USA

 

Manos M. Tentzeris

The School of Electrical and Computer Engineering

Georgia Institute of Technology

Atlanta

USA

 

Duixian Liu

Thomas. J. Watson Research Center, IBM

New York

USA

 

Amin Enayati

Emerson & Cuming Anechoic Chambers

Antwerp Area

Belgium

 

Karin Mohammadpour‐Aghdam

School of Electrical and Computer Engineering

University of Tehran

Iran

 

Farbod Molaee‐Ghaleh

School of Electrical and Computer Engineering

University of Tehran

Iran

Preface

Rapid advances in semiconductor and packaging technologies have promoted the development of two system design concepts known as system on chip (SoC) and system‐in‐package (SiP). SoC integrates analog, digital, mixed‐signal, and radio frequency (RF) circuits on a chip by a semiconductor process, while SiP implements separately manufactured functional blocks in a package by a packaging process. SoC yields improved system reliability and functionality at a much lower system cost. However, it degrades system performance and increase system power consumption due to unavoidable compromises in every circuit type in order to use the same material and process. On the contrary, SiP enhances system performance and reduces system power consumption but results in lower system reliability and higher system cost because of functional blocks and the fabrication of the package with different materials and processes.

Antennas are essential components for wireless systems. It is known that antennas are difficult to miniaturize, let alone integrate. Nevertheless, there have been attempts to integrate an antenna (or antennas) with other circuits in a die on a wafer using the back end of the line. An antenna realized in such a way is called an antenna on a chip (AoC) and is more suitable for terahertz applications for cost and performance reasons. In addition, there have been studies to integrate an antenna (or antennas) with a radio or radar die (or dies) into a standard surface‐mounted device using a packaging process, which has created a new trend in antenna and packaging termed antenna‐in‐package (AiP). AoC and AiP are obviously subsets of the above SoC and SiP concepts, so why do we specifically differentiate them from SoC and SiP? The reason is to highlight their unique property of radiation.

AiP technology balances performance, size, and cost, hence it has been widely adopted by chipmakers for 60‐GHz radios, augmented/virtual reality gadgets, and gesture radars. It has also found applications in 79‐GHz automotive radars, 94‐GHz phased arrays for imaging and data communications, 122‐GHz, 145‐GHz, and 160‐GHz sensors, as well as 300‐GHz wireless links. Recently, AiP technology has been under further development for millimeter‐wave (mmWave) fifth‐generation (5G) technology. Scalable large AiPs and multiple small AiPs have been successfully demonstrated in base stations, mobile phones, and networked cars at 28 GHz. We therefore believe that AiP technology will cause fundamental changes in the design of antennas for mobile communications for 5G and beyond operating in mmWave bands.

The development of mmWave AiP technology is particularly challenging because of the associated complexity in design, fabrication, integration, and testing. This book aims to face these challenges through disseminating relevant knowledge, addressing practical engineering issues, meeting immediate demands for existing systems, and providing the antenna and packaging solutions for the latest and emerging applications.

This book contains 11 chapters. The first five chapters lay some foundation and introduce fundamental knowledge. After the introductory chapter about how AiP technology has been developed as we know it today, several types of antennas are discussed in Chapter 2. An attempt is made to summarize the basic antennas and those antennas specifically developed for AiP technology. Emphasis is given to microstrip patch antennas and arrays, grid array antennas, Yagi–Uda antennas, and magneto‐electric dipole antennas because of their dominance in AiP technology. Performance improvement techniques of antennas for AiP technology are also described. Chapter 3 describes today's mainstream packaging solutions with either wire‐bond or flip‐chip interconnects, wafer‐level package, and fan‐out wafer‐level package. Chapter 4 focuses on the electrical, mechanical, and thermal co‐design for AiP modules. More importantly, the thermal management considerations for next‐generation heterogeneous integrated systems are reviewed in order to address the growing need for cooling the high‐power devices of future radio systems. Chapter 5 presents the design and optimization of an anechoic test facility for testing mmWave integrated antennas. This facility can be used for both probe‐based and connector‐based measurements.

The next five chapters are related to the design, fabrication, and characterization of AiPs in different materials and processes for mmWave applications. Chapter 6 discusses low‐temperature co‐fired ceramic (LTCC)‐based AiP. LTCC has unique properties for packaging mmWave circuits since it can provide a durable hermetic package with antennas, cavities, and integrated passive components. Chapter 7 illustrates how industrial organic packaging substrate technology used for classical integrated circuit (IC) packaging can support the development of innovative, efficient, and cost‐effective mmWave AiPs from 60 GHz up to 300 GHz. Chapter 8 focuses on embedded wafer‐level ball grid array (eWLB)‐based AiP. Unlike LTCC or high‐density integr (HDI), eWLB eliminates the need for a laminate substrate and replaces it with copper redistribution layers. Polymers are used for the electrical isolation between the metal layers. The metal routings are deposited by a combination of sputtering and electroplating with a thin film process. eWLB has historically been developed for mmWave automotive radar systems and therefore has naturally been used for mass production of mmWave AiPs. Chapter 9 presents surface laminar circuit (SLC)‐based AiP. Compared to LTCC, HDI, and eWLB, SLC is more suitable for fabrication of very large or dense AiPs. The chapter describes SLC materials and design guidelines, and then addresses the design challenges and solutions for 8 × 8 dual‐polarized phased arrays at 94 GHz for imaging and 28 GHz for 5G base station applications, respectively. Chapter 10 introduces different additive manufacturing technologies, methods to characterize three‐dimensional (3D)‐printed materials, a hybrid printing process by integrating 3D and inkjet printing, and a broadband 5G AiP realized with the hybrid process.

The last chapter turns to 3D AiP for power transfer, sensor nodes, and Internet of Things applications. This package has a cubic geometry with radiating antennas on its surrounding faces. The chapter highlights small antenna design and miniaturizing techniques as well as multi‐mode capability as a way to achieve wideband antennas.

This book is the result of the joint efforts of the 21 authors in eight different institutions in Asia, Europe, and the United States. A book on an emerging topic like AiP technology would not have been possible without such collaborations. We thank all authors for their creative contributions and careful preparation of manuscripts. We are also pleased to acknowledge the professional cooperation of the publishers.

Duixian LiuIBM Thomas J. Watson Research CenterYorktown Heights, NY, USA

 

Yueping ZhangSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore

Abbreviations

2D

               

two‐dimensional

3D

three‐dimensional

3GPP

3rd Generation Partnership Project

5G

fifth‐generation

ABS

acrylonitrile butadiene styrene

ACE

Advanced Semiconductor Engineering, Inc.

ACP

aperture‐coupled patch

ADS

Advanced Design System

AIA

active integrated antenna

AiM

antenna in a module

AiP

antenna‐in‐package

AM

additive manufacturing

AMC

artificial magnetic conductor

AoB

antenna on a board

AoC

antenna on a chip

AR

axial ratio

ARM

advanced reduced‐instruction set‐computer machine

ASIC

application‐specific integrated circuit

ASUT

antenna system under test

AUT

antenna under test

Az

azimuth

BCB

benzocyclobutene

BC‐SRR

broadside‐coupled SRR

BER

bit error rate

BERT

BER tester

BiCMOS

bipolar complementary metal oxide semiconductor

BGA

ball grid array

BLE

Bluetooth low energy

BT

Bluetooth

BT

bismaleimide triazine

BW

bandwidth

C4

controlled collapse chip connection

CATR

compact antenna test range

CCL

copper‐clad laminate

CLIP

continuous liquid interface printing

CMA

characteristic mode analysis

CMF

conjugate match factor

CMG

conjugate match gain

CMOS

complementary metal‐oxide semiconductor

CNC

computer numerical controlled

CP

circular polarization

CPS

coplanar strip

CPU

central processing unit

CPW

coplanar waveguide

CT

computer tomography

CTE

coefficient of thermal expansion

CUF

capillary underfill

DC

direct current

DLP

digital light projection

DMA

dynamic mechanical analysis

DRAM

dynamic random‐access memory

DRIE

deep reactive ion etching

EBG

electromagnetic bandgap

EIRP

equivalent isotropic radiated power

El

elevation

EM

electromagnetic

EMI

electromagnetic interference

ESD

electrostatic discharge

ETS

embedded traces

eWLB

embedded wafer‐level ball grid array

EZL

embedded Z line

FCC

Federal Communications Commission

FDM

fused‐deposition modeling

FE

front end

FF

far‐field

FMCW

frequency modulated continuous wave

FoM

figure of merit

FO PoP

fan‐out package‐on‐package

FO‐WLP

fan‐out wafer‐level packaging

FPGA

field‐programmable gate array

FR4

flame resistant 4

FSS

frequency selective surface

GaAs

gallium arsenide

GaN

gallium nitride

Gb/s

gigabit per second

GPU

graphics processing unit

GSG

ground‐signal‐ground

GSGSG

ground‐signal‐ground‐signal‐ground

GSM

global system for mobile communications

HAST

highly accelerated stress test

HBM

high bandwidth memory

HDI

high‐density integration

HDI

high‐density interconnect

HFSS

high‐frequency structure simulator

HPBW

half‐power beam width

HTCC

high‐temperature co‐fired ceramics

IC

integrated circuit

IEEE

Institute of Electrical and Electronics Engineers

IF

intermediate frequency

InFO_PoP

integrated fan out package on package

I/O

input/output

IoT

Internet of Things

ISM

industrial, scientific and medical

ISSCC

International Solid‐State Circuits Conference

JPL

jet propulsion laboratory

LCD

liquid crystal display

LCP

liquid crystal polymer

LGA

land grid array

LHCP

left‐hand circular polarization

LNA

low‐noise amplifier

LP

linearly polarized

LTCC

low‐temperature co‐fired ceramic

MACM

multiple amplitude component method

MAPCM

multiple amplitude phase component method

MCM

multi‐chip module

MEMS

micro‐electromechanical systems

MIM

metal–insulator–metal

MIMO

multiple input multiple output

MMIC

monolithic microwave integrated circuit

MMWAC

mmWave anechoic chamber

mmWave

millimeter‐wave

mSAP

modified semi‐additive process

MUF

molded underfill

NF

near‐field

NF

noise figure

NIST

National Institute of Standards and Technology

NRE

non‐recurring engineering

NRW

Nicholson–Ross–Weir

OTA

over‐the‐air

PAE

power‐added efficiency

PAM

phase amplitude method

PBO

polybenzoxazoles

PCB

printed circuit board

PEC

perfect electric conductor

PER

packet error rate

PET

polyethylene terephthalate

pHEMT

pseudomorphic high electron mobility transistor

PI

polyimide

PLA

polylactic acid

PLL

phase‐locked loop

PMC

perfect magnetic conductor

PP

polypropylene

PPM

polarization pattern method

PTH

plated‐through‐hole

p.u.l.

per unit length

QFN

quad flat non‐leaded

QFP

quad flat package

R&D

research and development

RAM

random‐access memory

RCC

resin‐coated copper

RCS

radar cross‐section

RDL

redistribution layer

RF

radio frequency

RFIC

radio frequency integrated circuit

RFID

radio‐frequency identification

RHCP

right‐hand circular polarization

RLCG

resistance, inductance, capacitance, and conductance

RMS

root mean square

RoHS

Restriction of Hazardous Substances Directive

RSM

rotating source method

RX

receiver

SAM

scanning acoustic microscopy

SAP

semi‐additive process

SAR

synthetic aperture radar

SEM

scanning electron microscopy

SG

signal‐ground

SiGe

silicon germanium

SiP

system‐in‐package

SISO

single input, single output

SIW

substrate integrated waveguide

SLA

stereolithography

SLC

surface laminar circuit

SLM

selective laser melting

SLS

selective laser sintering

SMA

sub‐miniature version A

SNR

signal‐to‐noise ratio

SoC

system on chip

SoP

system‐on‐package

SPDR

split post dielectric resonator

SPP

surface plasmon polariton

SRR

split‐ring resonator

SSD

solid state drive

SSMA

small SMA

SUB

subtractive process

TCB

thermocompression bonding

TE

transverse electric

TEM

transverse electro‐magnetic

TEV

through encapsulant via

TFMSL

thin‐film microstrip line

TIM

thermal interface material

TIV

through InFO via

TL

transmission line

TMA

thermomechanical analyzer

TM

transverse magnetic

TMV

through‐mold vias

TPP

two‐photo polymerization

TSMC

Taiwan Semiconductor Manufacturing Company

TSOP

thin small outline package

TSV

through silicon via

TX

transmitter

μvia

microvia

UBM

under bump metallurgy

UHF

ultra‐high frequency

UV

ultraviolet

UWB

ultra‐wideband

VCO

voltage‐controlled oscillator

VGA

variable gain amplifier

VLSI

very‐large‐scale integration

VNA

vector network analyzer

VQFN

very thin quad flat no‐lead

VSWR

voltage standing wave ratio

WGP

wave‐guide port

WiGig

wireless gigabit alliance

WLCSP

wafer level chip scale package

WLP

wafer level package

WPAN

wireless personal area network

WPT

wireless power transfer

WSN

wireless sensor network

Symbols

Ae

    

effective antenna aperture

c

speed of light

D

directivity

D

= max[

D

(

ϑ

,

ϕ

)]

directivity function

η

effciency

unit vector along the

r

axis

electric field in space frequency

f

frequency

G

gain

G

= max[

G

(

ϑ

,

ϕ

)]

gain function

Γ

reflection coeffcient

I

p

input current antenna

k

coverage factor

L

length of the radiating aperture

λ

0

wavelength in free space

M

v

measurement value

P

in

input power

P

t

total radiated power

P

(

ϑ

,

ϕ

)

normalized radiation power

R

radial distance from the antenna

R

a

resistive

R

L

radiated losses

R

r

radiated resistance

R

v

reference value

μ

sys

system uncertainty

Poynting vector

V

p

input voltage antenna

X

a

reactance

Z

0

characteristic impedance

Z

a

input impedance

Z

g

generator impedance =

R

g

1Introduction

Yueping Zhang

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

1.1 Background

As the technology of choice for integration of digital circuitry, a complementary metal oxide semiconductor (CMOS) was proposed for the integration of analog circuitry for radio frequency (RF) applications in the mid‐1980s, aiming for the ultimate goal of full integration of an entire wireless system on a chip [1]. In the mid‐1990s, the first fully integrated CMOS transceiver for data communications in the 900‐MHz industrial, scientific and medical (ISM) band was successfully demonstrated [2]. Since then, CMOS has been the enabler for wireless systems on chip (SoCs) operating from a few to tens of gigahertz. Figure 1.1 shows the die micrograph of the first wireless SoC, a 2.4‐GHz CMOS mixed RF analog–digital Bluetooth radio announced at the International Solid‐State Circuits Conference (ISSCC) 2001 [3]. The die size is 40.1 mm2. It integrates on the same substrate a low intermediate frequency (IF) receiver, a Cartesian transmitter, a baseband processer, an advanced reduced‐instruction set‐computer machine (ARM) processor, flash memory, and random‐access memory (RAM).

Full SoC integration is clearly not suitable in all cases. In fact, the radio chip is separate in many cases. Traditionally, silicon germanium (SiGe) seems to have been preferred to CMOS for analog RF. Figure 1.2 shows the die micrographs of the first SiGe 60‐GHz transmitter and receiver disclosed at ISSCC 2006 [4]. The die sizes are 4.0 ×  1.6 mm2 and 3.4 ×  1.7 mm2, respectively. The level of integration achieved in these chips was high then for 60‐GHz radios. The transmitter chip integrates a power amplifier, image‐reject driver, IF‐to‐RF up‐mixer, IF amplifiers, quadrature baseband‐to‐IF mixers, phase‐locked loop (PLL), and frequency tripler. The receiver chip includes an image‐reject low‐noise amplifier, RF‐to‐IF mixer, IF amplifiers, quadrature IF‐to‐baseband mixers, PLL, and frequency tripler. The input/output (I/O) pads are peripheral, with 60 on the transmitter and 53 on the receiver chips.

Figure 1.1

Micrograph of the first 2.4‐GHz CMOS wireless SoC, a Bluetooth radio (from [

3

], © 2001 IEEE, reprinted with permission).

Figure 1.2

Photographs of the first 60‐GHz SiGe radio chipset: (a) transmitter and (b) receiver (from [

4

], © 2006 IEEE, reprinted with permission).

The emergence of wireless SoCs or single‐chip radios called for compatible antenna solutions, which provided an excellent opportunity for researchers of prepared minds to seriously explore the feasibility of integrating an antenna in a chip package using packaging materials and processes in the late 1990s, leading to the development of antenna‐in‐package (AiP) technology [5]. This chapter recounts how AiP technology has been developed to its current state. Section 1.2 describes the idea of AiP with respect to the ideas of antenna on chip (AoC), antenna in module (AiM), antenna on board (AoB), and active integrated antenna (AIA). Section 1.3 reviews the early attempts to explore the idea of AiP. Section 1.4 reflects on the milestones in the development of the idea of AiP into a mainstream antenna and packaging technology. Finally, Section 1.5 gives concluding remarks.

1.2 The Idea

The idea of AiP was triggered by the demand for innovative antenna solutions to wireless SoCs [6]. It features using packaging technology to implement an antenna (or antennas) with a radio or radar die (or dies) in a chip package. It emphasizes only the addition of the unique function of radiation to the package. In this sense, it is different from the concept of system‐in‐package (SiP).

The idea of AoC sounds attractive [7]. It attempts to integrate an antenna (or antennas) with other circuits on a die directly using semiconductor technology. It is obviously a subset of the concept of SoC. Then why do we specifically differentiate it from SoC? The reason is to highlight the unique property of radiation, which is not necessarily being improved like digital circuits as the technology scales down. It is clear that AoC is more suitable for terahertz applications for cost and performance reasons.

The idea of AiM was proposed for multichip 60‐GHz radios [8]. It uses micro‐assembly technology to mount a few monolithic microwave integrated circuits (MMICs) and a small flat antenna in a hermetically sealed package. A window for the propagation of electromagnetic waves is formed above the antenna at the lid of the package. The window is also hermetically sealed.

The idea of AoB is similar to the idea of AiP. However, it relies on printed circuit board (PCB) technology to make an antenna (or antennas) on one surface of a board and to solder a packaged chip (or chips) on the other surface of the board. A few techniques, such as probe feeding or aperture coupling, are available to interconnect the packaged chip with the antenna. Of course, the antenna, the packaged chip, and the necessary feed networks can be contained on the same surface of the board. Recently, the idea of AoB has received considerable attention for millimeter‐wave (mmWave) fifth‐generation (5G) base stations [9].

A typical AIA consists of active devices such as Gunn diodes or transistors that form an active circuit and a planar antenna. The idea of AIA was proposed to eliminate the lossy and bulky interconnect between the active device and radiating element [10]. Later, the idea of AIA was employed for quasi‐optical power combining. The output power from an array of many solid‐state devices was combined in free space to overcome the power limitations of individual solid‐state devices at mmWave frequencies.

Although the origin of the above ideas can be traced back to the invention of microstrip antennas in the early 1970s [11], it should be noted that they extended the concept of microstrip antennas to different levels of integration.

1.3 Exploring the Idea

In this section, the early attempts to explore the idea of AiP are reviewed. It should be mentioned that researchers in university labs devoted their efforts regarding Bluetooth radios to 2.4 GHz or other RF applications, while researchers in company labs focused on 60‐GHz radios and other mmWave applications. At 2.4 GHz, a key challenge was how to miniaturize the antenna size, while at 60 GHz, it was how to minimize the interconnect loss between the die and antenna.

1.3.1 Bluetooth Radio and Other RF Applications

In 1998, Zhang started to work in the Division of Circuits and Systems at the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. The division soon initiated a strategic research project entitled “Software radio on a chip.” Zhang was tasked to develop an antenna technology for the project. Inspired by the structural similarity shared by a microstrip antenna and a microchip, shown in Figure 1.3, and foreseeing the outcome of an interesting antenna solution, Zhang immediately started to investigate the antenna performance of the microchip. First, Zhang did antenna experiments with used microchips, as shown in Figure 1.4a. Then, Zhang tried PCB mock‐ups, as shown in Figure 1.4b. Encouraged by good antenna results from the microchips and PCB mock‐ups, the research team led by Zhang realized more sophisticated designs, as shown in Figure 1.4c,d, with low‐temperature co‐fired ceramic (LTCC) technologies in 2004 [12]. It is interesting to note that differential microstrip patch and meander antennas were designed to suit high‐level integration of wireless SoCs. They were integrated on the top surfaces of two ball grid array (BGA) packages. Both packages had cavities to house wireless SoC dies. The interconnects from the die to the antenna were cascaded bond wires, traces, and vias. The interconnected die was encapsulated with epoxy.

Figure 1.3

Photograph of a microchip.

In 2000, Song et al. at University of Birmingham presented an integrated antenna package [13]. An electrically small feed antenna was designed on a semiconductor substrate, which also supported the RF front‐end circuits. The parasitic radiator placed above the feed antenna also acted as a top cover, sealing the entire package. Later, Song et al. presented another integrated antenna package [14]. A small antenna was embedded within the chip encapsulating material. A parasitic radiator was placed in close proximity to the embedded antenna, where it enhanced the poor gain and bandwidth of the packaged antenna.

In 2001, package engineers started to tackle the same problem. Lim et al. at the Georgia Institute of Technology managed to integrate RF passives, a patch antenna, and chips at the package level to enhance the overall performance of and to add more functionalities to an SoP paradigm [15]. Mathews et al. disclosed a package with an integral shield and antenna for a complete Bluetooth radio design [16].

In 2003, Ryckaert et al. at the Interuniversity Microelectronics Center, Belgium reported the co‐design of circular‐polarized slotted patch antenna with a wireless local area network (WLAN) transceiver in a multilayer package [17]. Popov et al. at the Institute of Microelectronics, Singapore reported the design of part of an RF chip package as a dielectric resonator antenna with a high dielectric constant when the antenna feed was integrated with the rest of the circuitry [18]. Leung at City University of Hong Kong independently proposed adding the chip package function to a dielectric resonator antenna in 2004 [19].

In 2005, Castany et al. at Fractus, Spain filed a patent about the integration of fractal antennas in a chip package [20]. They claimed that fractal antennas could provide very good antenna performance while allowing a high degree of miniaturization and an enhancement of isolation between the antenna and the die in the package.

Figure 1.4

Photographs showing the evolution of the integration of antenna in package: (a) an antenna on a used microchip package, (b) an antenna on a chip package mock‐up, (c) a microstrip patch antenna as an LTCC package, and (d) a microstrip meander antenna as an LTCC package.

In 2006, Brzezina et al. at Carleton University reported planar antennas with transceiver integration capability for ultra‐wideband (UWB) radios [21]. Sun et al. devised a novel technique that reduces the size of a conventional planar antenna by 40% and used it as a package to house a single‐chip UWB radio [22].

In 2007, Wi et al. at Yonsei University, Korea presented an antenna‐integrated package [23]. A modified U‐shaped slot antenna was designed and measured, showing bandwidth of 180 MHz at 5.8 GHz. A parametric study was conducted with a full‐wave electromagnetic solver to determine the critical factors in design and fabrication, as well as to estimate the performance accuracy of the antenna‐integrated package.

1.3.2 60‐GHz Radio and Other Millimeter‐wave Applications