Power Electronics Semiconductor Devices E-Book

Robert Perret

• Herausgeber: John Wiley & Sons
• Kategorie: Wissenschaft und neue Technologien
• Sprache: Englisch

Seitenzahl: 634

Veröffentlichungsjahr: 2013

Beschreibung

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Leseprobe

Table of Contents

Preface

Chapter 1. Power MOSFET Transistors

1.1. Introduction

1.2. Power MOSFET technologies

1.3. Mechanism of power MOSFET operation

1.4. Power MOSFET main characteristics

1.5. Switching cycle with an inductive load

1.6. Characteristic variations due to MOSFET temperature changes

1.7. Over-constrained operations

1.8. Future developments of the power MOSFET

1.9. References

Chapter 2. Insulated Gate Bipolar Transistors

2.1. Introduction

2.2. IGBT technology

2.3. Operation technique

2.4. Main IGBT characteristics

2.5. One cycle of hard switching on the inductive load

2.6 Soft switching study

2.7. Temperature operation

2.8. Over-constraint operations

2.9. Future of IGBT

2.10. IGBT and MOSFET drives and protections

2.11. References

Chapter 3. Series and Parallel Connections of MOS and IGBT

3.1. Introduction

3.2. Kinds of associations

3.3. The study of associations: operation and parameter influence on imbalances in series and parallel

3.4. Solutions for design

3.5. References

Chapter 4. Silicon Carbide Applications in Power Electronics

4.1. Introduction

4.2. Physical properties of silicon carbide

4.3. State of the art technology for silicon carbide power components

4.4. Applications of silicon carbide in power electronics

4.5. Conclusion

4.6. Acknowledgments

4.7. References

Chapter 5. Capacitors for Power Electronics

5.1. Introduction

5.2. The various components of the capacitor - description

5.3. Stresses in a capacitor

5.4. Film capacitors

5.5. Impregnated capacitors

5.6. Electrolytic capacitors

5.7. Modeling and use of capacitors

5.8. Ceramic capacitors

5.9. Specific applications of ceramic capacitors in power electronics

5.10. R&D perspectives on capacitors for power electronics

5.11. References

Chapter 6. Modeling Connections

6.1. Introduction

6.2. The method of modeling

6.3. The printed circuit board

6.4. Towards a better understanding of massive interconnections

6.5. Experimental validations

6.6. Using these models

6.7. Conclusion

6.8. References

Chapter 7. Commutation Cell

7.1. Introduction: a well-defined commutation cell

7.2. Some more or less coupled physical phenomena

7.3. The players in switching (respective roles of the component and its environment)

7.4. References

Chapter 8. Power Electronics and Thermal Management

8.1. Introduction: the need for efficient cooling of electronic modules

8.2. Current power components

8.3. Power electronic modules

8.4. Laws of thermal and fluid exchange for forced convection with single phase operation

8.5. Modeling heat exchanges

8.6. Experimental validation and results

8.7. Conclusion

8.8. References

Chapter 9. Towards Integrated Power Electronics

9.1. The integration

9.2. Examples and development of functional integration

9.3. Integration of functions within the power component

9.4. Design method and technologies

9.5. Conclusion

9.6. References

List of Authors

Index

First published in France in 2003 and 2005 by Hermes Science/Lavoisier entitled: Mise en oeuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance © LAVOISIER, 2003, 2005

First published in Great Britain and the United States in 2009 by ISTE Ltd and John Wiley & Sons, Inc.

Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address:

ISTE LtdJohn Wiley & Sons, Inc.27-37 St George’s Road111 River StreetLondon SW19 4EUHoboken, NJ 07030UK www.iste.co.ukUSA www.wiley.com

© ISTE Ltd, 2007

The rights of Robert Perret to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988.

Library of Congress Cataloging-in-Publication Data

Mise en oeuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance. English.

Power electronics semiconductor devices / edited by Robert Perret.

   p. cm.

Includes bibliographical references and index.

ISBN 978-1-84821-064-6

1. Power electronics. 2. Power semiconductors. 3. Solid state electronics. I. Perret, Robert. II. Title.

TK7881.15.M5713 2009

621.381'044--dc22

2009001021

British Library Cataloguing-in-Publication Data

A CIP record for this book is available from the British Library

ISBN: 978-1-84821-064-6

Preface

Electrical consumption, especially direct or variable frequency currents, has strongly increased over 50 years in industry. This situation explains the growth of power electronics.

At the beginning, when rectifiers replaced DC machines, only diodes and thyristors were used. Then power transistors appeared and enabled the extension of smaller power applications for domestic use. New research topics were developed around converters and power devices. For all these years, circuit specialists used available components but did not try to improve them; a lot of progress in device manufacturing proceeded from microelectronic tecnology.

At the beginning of the 21st century it appeared necessary to bring component researchers and circuit specialists closer together to create a global conception approach.

For over 15 years, French industrialists and academics have combined their efforts in the GIRCEP (Groupement Industriel et de Recherche sur les Composants Electrniques de Puissance) to develop, with the help of CNRS (Centre National de Recherche Scientifique - France), research programs in power electronics. Power Electronics Semiconductor Devices is a product of this work.

The first and second chapters are devoted to up-to-date switches (MOSFET and IGBT). Their properties and limitations are presented by P. Aloisi.

In Chapter 3, D. Chatroux and J.L. Schanen explain how to increase current or voltage with serial or parallel associations of elementary components.

M.L. Locatelli and D. Planson present a prospective study on new silicone carbide devices in Chapter 4. Possible performance improvements are shown as well as the technological difficulties linked to the production and process of the material.

Chapter 5 is devoted to a passive component essential for static converters; power capacitors working at high frequency. The authors are A. Béroual, S. Guillemet and Th. Lebey.

Power electronics must use conductors that allow the movement of large currents with a parasitic inductance as low as possible. A model for a good design of these conductors is described by E. Clavel, F. Costa, C. Gauthier, A. Guéna, J. Roudet and JL. Schanen in Chapter 6.

The operation of converters is often explained by the swiching cell concept defined by H. Foch [FOC88] in the 1980s. The right understanding of its operation and fine modeling are shown in Chapter 7, written by J. Roudet and JL. Schanen.

In Chapter 8, thermal aspects relating to the use of power electronic devices are developed by C. Perret and R. Perret with the help of J.M. Dorkel. The main problems related to cooling and examples of modeling are described.

Finally, in Chapter 9, P. Austin, M. Breil and JL. Sanchez show the value of integration on silicon for power electronic modules. From industrial achievements and laboratory prototypes they provide progressive ideas that can lead to a profound evolution of power electronics.

The book lacks at least one chapter: one which deals with magnetic components for power electronics. Several recent studies have been developed in laboratories; interested readers may consult [KER03] and [LAO04] for further information on current developments.

This book on power electronic devices represents a summary of research carried out in French and international laboratories in the early years of the 21st century.

Robert Perret

References

[FOC88] FOCH H. and al, “Electronique de puissance”, Les Techniques de l’Ingénieur, D3150 to D3163.

[KER03] KERADEC J.-P., FOUASSIER P., COGITORE B., BLACHE F., “Accounting for resistivity and permeability measurements. Application to MnZn ferrites”, IEEE Instrumentation Measurements and Technology Conference, vol 2 no. 23-27, p.1252- 1256, Vail, USA, 2003.

[LAO04] LAOUAMRI K., KERADEC J.-P., FERRIEUX J.-P., BARBAROUX J., “Design and identification of an equivalent circuit for a LCT component. Inventory and representation of losses”, IEEE Transactions on Instrumentation and Measurements, vol 53 no. 5, p.1409-1417, 2004.