Spintronics for Next Generation Innovative Devices E-Book

• Herausgeber: John Wiley & Sons
• Kategorie: Fachliteratur
• Serie: Wiley Series in Materials for Electronic & Optoelectronic Applications
• Sprache: Englisch

Seitenzahl: 499

Veröffentlichungsjahr: 2015

Beschreibung

Spintronics (short for spin electronics, or spin transport electronics) exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Controlling the spin of electrons within a device can produce surprising and substantial changes in its properties.

Drawing from many cutting edge fields, including physics, materials science, and electronics device technology, spintronics has provided the key concepts for many next generation information processing and transmitting technologies. This book discusses all aspects of spintronics from basic science to applications and covers:

• magnetic semiconductors
• topological insulators
• spin current science
• spin caloritronics
• ultrafast magnetization reversal
• magneto-resistance effects and devices
• spin transistors
• quantum information devices

This book provides a comprehensive introduction to Spintronics for researchers and students in academia and industry.

Leseprobe

Table of Contents

Cover

Series Page

Title Page

Copyright

List of Contributors

Series Preface

Wiley Series in Materials for Electronic and Optoelectronic Applications

Preface

Introduction

MATERIALS FOR SPINTRONICS

SPINTRONICS FUNCTIONS

Chapter 1: Fundamentals of Magnetoresistance Effects

1.1 Giant Magnetoresistance (GMR) Effect

1.2 Tunnel Magnetoresistance (TMR) Effect

References

Chapter 2: Spintronics Materials with High-Spin Polarization

2.1 Introduction

2.2 Development of Highly Spin Polarized Materials

2.3 Device Applications

2.4 Summary

Acknowledgements

References

Chapter 3: Spin Current

3.1 Introduction

3.2 Concept of Spin Current

3.3 An Exact Definition of Spin Current

3.4 Incoherent Spin Current

3.5 Exchange Spin Current

3.6 Topological Spin Current

3.7 Thermal Spin Current - Spin Seebeck Effect

3.8 Concluding Remarks

References

Chapter 4: Spin Hall Effect and Inverse Spin Hall Effect

4.1 Spin Hall Effect

4.2 Topological Insulators

4.3 Summary

Acknowledgment

References

Chapter 5: Spin Torque (Domain Wall Drive, Magnetization Reversal)

5.1 Introduction

5.2 Experiment: Current-Driven DW Displacement in a Magnetic Nanowire

5.3 EXPERIMENT: Electrical Spectroscopy of Vortex State and Gyration in a Magnetic Disk

5.4 Conclusion

Acknowledgements

References

Chapter 6: Spin Pumping

6.1 Spin Pumping and Magnetization Damping

6.2 Electrically Detected Spin Pumping

6.3 A Broader View on Spin Pumping

References

Chapter 7: Spin Seebeck Effect

7.1 Introduction

7.2 Experiments

7.3 Theory

7.4 Summary

References

Chapter 8: Spin Conversion at Magnetic Interfaces

8.1 Introduction

8.2 Optical Detection of Electron Spins

8.3 Spin Filtering Effect of Thin Layers

8.4 Electric Tunable Spin Resonant Tunneling Effect

8.5 Spin-Injection-induced Magnetic Phase Transition in FeRh

8.6 Summary and Future Prospects

Acknowledgements

References

Chapter 9: Carbon-based Spintronics

9.1 Introduction

9.2 Theories and Importance Concepts in Spin-Dependent Transport and Spin Relaxation

9.3 Spin-Dependent Transport via Molecules

9.4 Summary

References

Appendix

Chapter 10: Silicon Spintronics for Next-Generation Devices

10.1 Recent Progress in Silicon Spintronics

10.2 High-Quality Schottky Tunnel Contact

10.3 Si-MOSFET Structure for Detecting Spin Accumulation

10.4 Spin Injection and Detection in a Si-MOSFET Structure

10.5 Summary

References

Chapter 11: Electric-Field Control of Magnetism in Ferromagnetic Semiconductors

11.1 Introduction

11.2 Experimental Techniques of Electric Field Effect

11.3 Electric Field Control of Ferromagnetism in Ferromagnetic Semiconductors

11.4 Summary and Prospect

Acknowledgments

References

Chapter 12: Quantum Information Processing Using Nitrogen-Vacancy Centres in Diamond

12.1 Introduction

12.2 Longitudinal Electron-Spin Relaxation () of NV Centre

12.3 Coherence Time () of NV Centre in Diamond with Natural Abundance of

12.4 Free-Induction Decay Time

12.5 Coherence Time of Electron and Nuclear Spin in -Enriched Diamond

12.6 Spin and Optical Properties of NV Centres Close to Surface

12.7 Magnetometry

12.8 Summary

References

Chapter 13: Ultrafast Light-Induced Spin Reversal in Amorphous Rare Earth-Transition Metal Alloy Films

13.1 Introduction

13.2 Control of Magnetization Dynamics with Precessional Motion

13.3 Ultrafast Distinct Dynamics of Sublattices and Transient Ferromagnetic State

13.4 All Optical Magnetization Switching Phenomena with an Ultrashort Pulsed Laser

13.5 Conclusions

Acknowledgments

References

Index

End User License Agreement

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Guide

Cover

Table of Contents

Preface

Begin Reading

List of Tables

Chapter 1: Fundamentals of Magnetoresistance Effects

Table 1.1 GMR effect in various kinds of superlattices

Chapter 2: Spintronics Materials with High-Spin Polarization

Table 2.1 Spin polarization deduced by PCAR for various ternary and quaternary Heusler alloys and their Curie temperatures. (Reprinted with permission from B. S. D. Ch. S Varaprasad, A. Srinivasan, Y. K. Takahashi, M. Hayashi, A. Rajanikanth, and K. Hono,

Acta Mater.

60

, 6257 (2012). ©2012 Elsevier B.V.)

Chapter 11: Electric-Field Control of Magnetism in Ferromagnetic Semiconductors

Table 1 Electric field effect studies on ferromagnetic semiconductors and oxides

Wiley Series in Materials for Electronic and Optoelectronic Applications

www.wiley.com/go/meoa

Series Editors

Professor Arthur Willoughby, University of Southampton, Southampton, UK

Dr Peter Capper, Formerly of Selex ES, Southampton, UK

Professor Safa Kasap, University of Saskatchewan, Saskatoon, Canada

Published Titles

Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, Edited by P. Capper

Properties of Group-IV, III–V and II–VI Semiconductors, S. Adachi

Charge Transport in Disordered Solids with Applications in Electronics, Edited by S. Baranovski

Optical Properties of Condensed Matter and Applications, Edited by J. Singh

Thin Film Solar Cells: Fabrication, Characterization and Applications, Edited by J. Poortmans and V. Arkhipov

Dielectric Films for Advanced Microelectronics, Edited by M. R. Baklanov, M. Green and K. Maex

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, Edited by P. Capper and M. Mauk

Molecular Electronics: From Principles to Practice, M. Petty

CVD Diamond for Electronic Devices and Sensors, Edited by R. S. Sussmann

Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors, S. Adachi

Mercury Cadmium Telluride, Edited by P. Capper and J. Garland

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, Edited by C. Litton, D. C. Reynolds and T. C. Collins

Lead-Free Solders: Materials Reliability for Electronics, Edited by K. N. Subramanian

Silicon Photonics: Fundamentals and Devices, M. Jamal Deen and P. K. Basu

Nanostructured and Subwavelength Waveguides: Fundamentals and Applications, M. Skorobogatiy

Photovoltaic Materials: From Crystalline Silicon to Third-Generation Approaches, G. Conibeer and A. Willoughby

Glancing Angle Deposition of Thin Films: Engineering the Nanoscale, Matthew M. Hawkeye, Michael T. Taschuk and Michael J. Brett

Spintronics for Next Generation Innovative Devices

Edited by

KATSUAKI SATO Program Officer PRESTO Project, Japan Science and Technology Agency (JST), Tokyo, Japan

EIJI SAITOH Institute for Materials Research and WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan

This edition first published 2015

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ISBN: 9781118751916