Vacuum Nanoelectronic Devices E-Book

Anatoliy Evtukh

• Herausgeber: John Wiley & Sons
• Kategorie: Wissenschaft und neue Technologien
• Sprache: Englisch

Seitenzahl: 969

Veröffentlichungsjahr: 2015

Beschreibung

Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. 

This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed.

Key features:

• In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources.

• Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers.

• Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing.

• New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics.

This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

Leseprobe

Table of Contents

Cover

Title Page

Copyright

Preface

Part One: Theoretical Backgrounds of Quantum Electron Sources

Chapter 1: Transport through the Energy Barriers: Transition Probability

1.1 Transfer Matrix Technique

1.2 Tunneling through the Barriers and Wells

1.3 Tunneling through Triangular Barrier at Electron Field Emission

1.4 Effect of Trapped Charge in the Barrier

1.5 Transmission Probability in Resonant Tunneling Structures: Coherent Tunneling

1.6 Lorentzian Approximation

1.7 Time Parameters of Resonant Tunneling

1.8 Transmission Probability at Electric Fields

1.9 Temperature Effects

References

Chapter 2: Supply Function

2.1 Effective Mass Approximation

2.2 Electron in Potential Box

2.3 Density of States

2.4 Fermi Distribution Function and Electron Concentration

2.5 Supply Function at Electron Field Emission

2.6 Electron in Potential Well

2.7 Two-Dimensional Electron Gas in Heterojunction GaN-AlGaN

2.8 Electron Properties of Quantum-Size Semiconductor Films

References

Chapter 3: Band Bending and Work Function

3.1 Surface Space-Charge Region

3.2 Quantization of the Energy Spectrum of Electrons in Surface Semiconductor Layer

3.3 Image Charge Potential

3.4 Work Function

3.5 Field and Temperature Dependences of Barrier Height

3.6 Influence of Surface Adatoms on Work Function

References

Chapter 4: Current through the Barrier Structures

4.1 Current through One Barrier Structure

4.2 Field Emission Current

4.3 Electron Field Emission from Semiconductors

4.4 Current through Double Barrier Structures

4.5 Electron Field Emission from Multilayer Nanostructures and Nanoparticles

References

Chapter 5: Electron Energy Distribution

5.1 Theory of Electron Energy Distribution

5.2 Experimental Set Up

5.3 Peculiarities of Electron Energy Distribution Spectra at Emission from Semiconductors

5.4 Electron Energy Distribution at Emission from Spindt-Type Metal Microtips

5.5 Electron Energy Distribution of Electrons Emitter from Silicon

References

Part Two: Novel Electron Sources with Quantum Effects

Chapter 6: Si Based Quantum Cathodes

6.1 Introduction

6.2 Electron Field Emission from Porous Silicon

6.3 Electron Field Emission from Silicon with Multilayer Coating

6.4 Peculiarities of Electron Field Emission from Si Nanoparticles

6.5 Formation of Conducting Channels in SiO

x

Coating Film

6.6 Electron Field Emission from Si Nanowires

6.7 Metal-Insulator-Metal Emitters

6.8 Conclusion

References

Chapter 7: GaN Based Quantum Cathodes

7.1 Introduction

7.2 Electron Sources with Wide Bandgap Semiconductor Films

7.3 Resonant Tunneling of Field Emitted Electrons through Nanostructured Cathodes

7.4 Field Emission from GaN Nanorods and Nanowires

7.5 Conclusions

References

Chapter 8: Carbon-Based Quantum Cathodes

8.1 Introduction

8.2 Diamond and Diamond Film Emitters

8.3 Diamond-Like Carbon Film Emitters

8.4 Carbon Nanotube Emitters

8.5 Electron Emission from Graphene and Nanocarbon

8.6 Conclusion

References

Chapter 9: Quantum Electron Sources for High Frequency Applications

9.1 Introduction

9.2 High Frequency Application of Resonant Tunneling Diode

9.3 Field Emission Resonant Tunneling Diode

9.4 Generation of THz Signals in Field Emission Vacuum Devices

9.5 AlGaN/GaN Superlattice for THz Generation

9.6 Gunn Effect at Electron Field Emission

9.7 Field Emission Microwave Sources

9.8 Conclusion

References

Index

End User License Agreement

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Guide

Cover

Table of Contents

Preface

Begin Reading