Van der Waals Heterostructures E-Book
133,99 €
Mehr erfahren.
- Herausgeber: Wiley-VCH GmbH
- Kategorie: Fachliteratur
- Sprache: Englisch
This book systematically introduces the latest developments made in van der Waals heterostructures and devices based on 2D materials in all aspects, from basic synthesis to physical analysis, heterostructures assembling to devices applications.
Sie lesen das E-Book in den Legimi-Apps auf:
Veröffentlichungsjahr: 2022
Ähnliche
Table of Contents
Cover
Title Page
Copyright
Preface
1 The 2D Semiconductor Library
1.1 Introduction
1.2 Emerging 2DLMs for Future Electronics
References
2 The 2D Semiconductor Synthesis and Performances
2.1 Exfoliation
2.2 Chemical Vapor Deposition
References
3 The VdW Heterostructure Controllable Fabrications
3.1 Wet Transfer
3.2 Controllable Selective Synthesis
3.3 Dry Transfer
References
4 The Mixed‐dimensional VdW Heterostructures
4.1 Categorization of Mixed‐dimensional VdWHs
4.2 Strategies for Constructing Mixed‐dimensional VdWHs
4.3 Electronic and Sensing Applications
4.4 Optoelectronic and Photonic Applications
4.5 Energy Applications
4.6 Conclusions
References
5 The VdW Heterostructure Interface Physics
5.1 Band Alignment and Charge Transfer in VdWHs
5.2 Magnetic Coupling in VdWHs
5.3 Moiré Pattern
5.4 VdWHs for Protection
5.5 Characterization Techniques for VdWHs
References
6 The VdW Heterostructure Multi‐field Coupling Effects
6.1 Introduction
6.2 The Multifield Coupling Effect Characterization for 2D Van der Waals Structures
6.3 The Multifield Modulation for Electrical Properties of 2D Van der Waals Structures
6.4 The Multifield Modulation for Optical Properties of 2D Van der Waals Structures
References
7 VdW Heterostructure Electronics
7.1 Van der Waals PN Junctions
7.2 Van der Waals Metal–Semiconductor Junctions
7.3 Field‐effect Transistor
7.4 Junction Field‐Effect Transistor
7.5 Tunneling Field‐Effect Transistor
7.6 Van der Waals Integration
References
8 VdW Heterostructure Optoelectronics
8.1 Photodetectors
8.2 Light Emission
8.3 Optical Modulators
References
9 VdW Heterostructure Electrochemical Applications
9.1 Solar Energy
9.2 Van der Waals Heterostructure Application in Hydrogen Energy
9.3 Battery
9.4 Catalyst
9.5 Biotechnology
References
10 Perspective and Outlook
10.1 Overall Development Status of 2D Materials
10.2 Compatibility Between 2D Van der Waals Device Processing and Silicon Technology
10.3 Promising Roadmap of Van der Waals Heterostructure Devices [Medium term: 5 years, Long term: 5–10 years]
10.4 Promising Roadmap of Optoelectronic Device
10.5 Conclusion and Prospect
References
Index
End User License Agreement
List of Tables
Chapter 8
Table 8.1 Summary of vdWH photodetectors (Gr: graphene; GO: graphene oxide;...
Table 8.2 Summary of typical VdWH LEDs (Gr: graphene; BP: black phosphorus;...
List of Illustrations
Chapter 1
Figure 1.1 Two‐dimensional materials for future electronic devices: from cel...
Figure 1.2 Brief introduction of graphene. (a) Relationship between conducta...
Figure 1.3 Structure and optoelectronic applications of graphite–acetylene g...
Figure 1.4 (a) Crystal structures of h‐BN.
Figure 1.5 (a) 2H, 1T, 1T
′
structures schematic diagram of layer TMDCs...
Figure 1.6 Compositions of MXenes and MAX phases in periodic tables. (a) Ele...
Figure 1.7 (a) Crystal structures of MoO
3
; (b) crystal structures of V
2
O
5
; (...
Chapter 2
Figure 2.1 Exfoliated graphene films.
Figure 2.2 Exfoliation and characterization of large‐area MoS
2
on Au substra...
Figure 2.3 Schematic illustration of the photo‐induced exfoliation of MoS
2
i...
Figure 2.4 (a) Schematic diagram of WS
2
growth and the effect of regulating ...
Figure 2.5 (a) Schematic image of LPCVD two‐step synthesis of WSe
2
/SnS
2
vert...
Figure 2.6 (a) Schematic of experimental setup for PECVD including gaseous s...
Figure 2.7 (a) Atomic geometry of interface showing only the topmost graphen...
Chapter 3
Figure 3.1 Simple schematic diagram of graphene film transfer by metal etchi...
Figure 3.2 The schematic diagram of the CVD‐grown WS
2
film transferred on ta...
Figure 3.3 Illustration and live view of the transfer process of graphene fi...
Figure 3.4 Schematic diagrams of the high‐fidelity wedging transfer process ...
Figure 3.5 Vertical 2D‐2D van der Waals heterostructures. (a) Scanning trans...
Figure 3.6 Lateral 2D‐2D heterostructures. Schematic illustration of the pre...
Figure 3.7 One‐dimensional 2D‐2D van der Waals heterostructures. (a) Schemat...
Figure 3.8 Controllable synthesis of 2D‐1D heterostructures. (a) Growth and ...
Figure 3.9 Controllable synthesis of 2D‐3D heterostructures. Schematics and ...
Figure 3.10 The scheme of transfer processes utilizes thermal‐release tape. ...
Figure 3.11 Schematic process flow for the pick‐up and drop‐down process to ...
Figure 3.12 The computer‐assisted design schematics, functionalities, and ph...
Chapter 4
Figure 4.1 (a) Schematic of the dimensionality‐dependent density of states a...
Figure 4.2 (a) Schematic of the typical transfer‐assisted fabrication proces...
Figure 4.3 Electronic and chemical sensing applications of mixed‐dimensional...
Figure 4.4 Optoelectronics based on 2D‐1D mixed‐dimensional vdWHs. (a) Optic...
Figure 4.5 Optoelectronics based on the 2D‐3D mixed‐dimensional vdWHs. (a) S...
Figure 4.6 Energy applications of mixed‐dimensional hybrids. (a) 2D WS
2
/1D C...
Chapter 5
Figure 5.1 (a, b) Schematics and results of the pump‐probe configuration use...
Figure 5.2 (a–c) Stacking tunable interlayer magnetism of CrI
3
. Crystal. (a)...
Figure 5.3 (a–c) IQHE and FQHE in BP‐h‐BN vdWH.
Figure 5.4 (a) DAADF characterization of MoS
2
/WSe
2
vdWHs showing moiré patte...
Figure 5.5 (a) STS data measured on MoS
2
, WS
2,
and MoS
2
/WS
2
vdWHs.
Figure 5.6 (a) Two‐dimensional PL mapping and the corresponding PL intensity...
Chapter 6
Figure 6.1 The multifield microscopy techniques on 2D vdW structures. (a)Top...
Figure 6.2 The multifield optical spectroscopy techniques on 2D vdW structur...
Figure 6.3 Strain‐engineered electrical properties of 2D vdW structures. (a)...
Figure 6.4 Strain‐regulated optical properties of 2D vdW structures. (a) Sch...
Figure 6.5 Electric‐ and thermal‐engineered optical properties for 2D vdW st...
Chapter 7
Figure 7.1 (a) Large‐range
I
ds
versus
V
ds
curve of the device. Inset is the ...
Figure 7.2 (a) Structure schematic of the BP/ReS
2
‐based TCAM cell and the eq...
Figure 7.3 (a–f) Fabrication processes of WSe
2
transistors using vdW integra...
Figure 7.4 (a) Schematic diagram of the simple structure of FET. (b) Schemat...
Figure 7.5 (a) The effective channel b of the JFET depletion layer width W
D
...
Figure 7.6 (a) The fabrication process of SnSe/MoS
2
JFET. (b) Transfer chara...
Figure 7.7 (a) (i) Schematic diagram of the cross‐section of n‐type TFET, (i...
Figure 7.8 (a) Photograph of a 2‐in. MoS
2
wafer with 1‐bit full‐adder arrays...
Chapter 8
Figure 8.1 (a) Schematic drawing of a p‐MoTe
2
/n‐MoS
2
vdWH for light sensing ...
Figure 8.2 (a) The measurement system for polarization‐sensitive photodetect...
Figure 8.3 (a) The BP‐on‐WSe
2
photodetector, (b) photocurrent microscopy ima...
Figure 8.4 (a) The fabricated BP/SnSe
2
heterojunction; (b) band alignment at...
Figure 8.5 (a) Band alignment of the photo‐thermionic (PTI) effect at the Gr...
Figure 8.6 (a) 3D sketch of a top‐gated WS
2
phototransistor. (b) Photorespon...
Figure 8.7 (a) The layout of a p‐g‐n heterostructure; (b) broadband photores...
Figure 8.8 (a) A cross‐section view of the WSe
2
/MoS
2
diode; (b) the correspo...
Figure 8.9 (a) The cross‐sectional view of the asymmetric LED. (b) EL from t...
Figure 8.10 (a) Schematic drawing of the n‐MoS
2
/p‐MoS
2
/p‐GaN heterostructure...
Figure 8.11 (a) VdWH (monolayer Gr/10‐layer MoS
2
) set on a flat mirror subst...
Figure 8.12 (a) Schematic drawing and (b) optical image of a vertical hetero...
Figure 8.13 (a) Schematic drawing of the Gr/MoS
2
modulator.
Figure 8.14 (a) Schematic sketch of the Gr/BN vdWH integrated with a silicon...
Chapter 9
Figure 9.1 (a) Conversion of solar photons into three forms of energy in nat...
Figure 9.2 Van der Waals heterostructure for hydrogen production by water ph...
Figure 9.3 Van der Waals heterostructure for hydrogen production by water el...
Figure 9.4 (a) The discharge and charge mechanism of a LIB using heterostruc...
Figure 9.5 (a–c) Morphology engineering for 2D TMDC‐based catalysts. The mod...
Figure 9.6 Vacancy and interface engineering for 2D TMDC‐based catalysts. (a...
Figure 9.7 (a) Research trends in 2D nanomaterials and some promising biomed...
Chapter 10
Figure 10.1 The nondestructive optical techniques for revealing the layer‐re...
Figure 10.2 Compatibility and difference between 2D materials and traditiona...
Figure 10.3 Future integration paradigm based on van der Waals device.
Figure 10.4 2D van der Waals optoelectronic device development.
Guide
Cover Page
Table of Contents
Title Page
Copyright
Preface
Begin Reading
Index
Wiley End User License Agreement
Pages
iii
iv
xi
xii
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
287
288
289
290
291
292
293
295
296
297
298
299
300
301
302
303
304
305
306
307
308
309
310
311
312
313
314
315
316
317
318
319
320
321
322
323
324
Van der Waals Heterostructures
Fabrications, Properties, and Applications
Edited by Zheng Zhang, Zhuo Kang, Qingliang Liao, and Yue Zhang
Editors
Dr. Zheng Zhang
University of Science & Technology Beijing
Department of Materials Physics & Chemistry
Xueyuan Road 30#
Haidian District
100083 Beijing
China
Dr. Zhuo Kang
University of Science & Technology Beijing
School of Materials Science and Engineering
Xueyuan Road 30#
Haidian District
100083 Beijing
China
Dr. Qingliang Liao
University of Science & Technology Beijing
School of Materials Science and Engineering
Xueyuan Road 30#
Haidian District
100083 Beijing
China
Dr. Yue Zhang
University of Science & Technology Beijing
Department of Materials Physics & Chemistry
Xueyuan Road 30#
Haidian District
100083 Beijing
China
Cover: FORMGEBER Mannheim
All books published by WILEY‐VCH are carefully produced. Nevertheless, authors, editors, and publisher do not warrant the information contained in these books, including this book, to be free of errors. Readers are advised to keep in mind that statements, data, illustrations, procedural details or other items may inadvertently be inaccurate.
Library of Congress Card No.: applied for
British Library Cataloguing‐in‐Publication Data:
A catalogue record for this book is available from the British Library.
Bibliographic information published by the Deutsche Nationalbibliothek
The Deutsche Nationalbibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data are available on the Internet at http://dnb.d-nb.de.
© 2023 Wiley‐VCH GmbH, Boschstraße 12, 69469 Weinheim, Germany
All rights reserved (including those of translation into other languages). No part of this book may be reproduced in any form – by photoprinting, microfilm, or any other means – nor transmitted or translated into a machine language without written permission from the publishers. Registered names, trademarks, etc. used in this book, even when not specifically marked as such, are not to be considered unprotected by law.
Print ISBN978‐3‐527‐34950‐0
ePDF ISBN 978‐3‐527‐83386‐3
ePub ISBN 978‐3‐527‐83387‐0
oBook ISBN 978‐3‐527‐83388‐7
Preface
As the feature size of semiconductor devices keeps shrinking along Moore’s law, the principle that has powered the information technology revolution since the 1960s, the physical limits to silicon‐based transistors have been reached, resulting in severe performance degradations caused by short‐channel effects, gate oxide tunneling, and surge in power consumption. In order to further downscale the transistors without performance degradations in the post‐Moore era, massive research has been carried out to explore revolutionary new materials and devices. Among them, two‐dimensional (2D) layered materials, including graphene, transition metal dichalcogenides (TMDCs), and related van der Waals (vdW) structures, have been proven to possess great potential for future post‐Moore electronics, optoelectronics, etc.
2D materials possess unique properties with covalently bonded in‐plane and dangling‐bond free surfaces, which ensure monolayers can be stacked on top of each other and held together by interlayer vdW forces. Beside, 2D materials can be integrated into a new type of heterostructures with other materials in various dimensions, including zero‐dimensional (0D) nanoparticles, one‐dimensional (1D) nanowires, 2D films, and three‐dimensional (3D) bulk materials, by exceeding the limitation of close lattice match at the interface. Except for 2D‐2D heterostructures, other structures are so‐called mixed‐dimensional vdW heterostructures. In these heterostructures, the weak vdW forces between the neighboring materials make each material maintain its original electronic structure, without the influence of the interface structure variations. The convenience of this combination leads to many new phenomena, devices, and mechanisms, such as the 0D‐2D photo gating effect, static electrical doping, and 1D‐2D nanowire gating. The underlying physics phenomena and possible applications in integrated circuits, sensors, or energy harvesting have attracted broad interest in academia and industry. In a word, vdW heterostructures provide the promising opportunity to combine different materials with unique properties as the building blocks of engineering new functional structures for the fabrication and applications of 2D electronic and optoelectronic devices.
Our group has been devoted into TMDCs semiconductors and their 0D‐2D, 1D‐2D, 2D‐2D, and 2D‐3D vdW heterostructures since 2013. Recently, along with the highly developed multi‐disciplinary integration, considerable progress has been achieved in fundamental research and technological applications of TMDCs vdW heterostructures. This book covers state‐of‐the‐art theoretical and experimental research on vdW heterostructures and their applications as electronic and optoelectronic devices. This book is divided into 10 chapters and guided by Dr. Zheng Zhang, Dr. Yue Zhang, Dr. Zhuo Kang, and Dr. Qingliang Liao. The detailed chapter theme and authors are as follows: Chapter 1, “The 2D semiconductor library” (Zheng Zhang and Yue Zhang); Chapter 2, “The 2D semiconductor synthesis and performances” (Xiang Chen, Qijie Liang, and Yue Zhang); Chapter 3, “The vdW heterostructure controllable fabrications” (Zheng Zhang, Qingliang Liao, and Yue Zhang); Chapter 4, “The mixed‐dimensional vdW heterostructures” (Pei Lin, Baishan Liu, and Zheng Zhang); Chapter 5, “The vdW heterostructure interface physics” (Guangjie Zhang, Yang Ou, Peifeng Li and Qingliang Liao); Chapter 6, “The vdW heterostructure multi‐field coupling effects” (Junli Du, Baishan Liu, and Zheng Zhang); Chapter 7, “VdW heterostructure electronics” (Xiankun Zhang, Xiang Chen, and Yue Zhang); Chapter 8, “VdW heterostructure optoelectronics” (Qi Zhang, Zhuo Kang, and Yue Zhang); Chapter 9, “VdW heterostructure electrochemical applications” (Xiankun Zhang and Zhuo Kang); Chapter 10, “Perspective and outlook” (Zheng Zhang and Yue Zhang). In addition to the help of the aforementioned members, the completion of the book is also inseparable from the unremitting efforts of the following doctoral students, including Huihui Yu, Li Gao, Wenhui Tang, Xiaofu Wei, Mengyu Hong, Ruishan Li, Yihe Liu, He Jiang, Kuanglei Chen, Haoran Zeng, Yanzhe Zhang, and Xuan Yu. With this book, I wish to thank my current and former group members, as well as the outstanding colleagues and collaborators who have dedicated themselves to this crucial research area.
The University of Science and Technology Beijing and the funding agencies also have my appreciation for providing the necessary support of the research work. Among the latter, special thanks are due to the National Natural Science Foundation of China (Nos. 51991340, 51991342, 92163205, 51972022), the National Key R&D Program of China (No. 2018YFA0703503), the Overseas Expertise Introduction Projects for Discipline Innovation (No. B14003), and the Natural Science Foundation of Beijing Municipality (Grant No. Z180011).
I worked consistently to accomplish this work with Wiley publisher. I hope that this contribution would further enhance the applied material sciences, especially in bringing new entrants into the nanotechnology fields, and help scientists to come forward and develop their own field of specialization.
Last, but by no means least, I am deeply appreciative of the understanding and support shown by my family members, without whom these achievements could never be obtained.
Dr. Yue Zhang
Academician of Chinese Academy of Sciences
Fellow of Royal Society Chemistry
Editor‐in‐chief of National Science Open
Engineering and Materials Science Associate Editor of Fundamental Research
E‐mail: [email protected]
